GB635385A - Improvements in or relating to methods of manufacturing crystal contact devices - Google Patents

Improvements in or relating to methods of manufacturing crystal contact devices

Info

Publication number
GB635385A
GB635385A GB2930447A GB2930447A GB635385A GB 635385 A GB635385 A GB 635385A GB 2930447 A GB2930447 A GB 2930447A GB 2930447 A GB2930447 A GB 2930447A GB 635385 A GB635385 A GB 635385A
Authority
GB
United Kingdom
Prior art keywords
relating
methods
crystal contact
contact devices
manufacturing crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2930447A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL143116D priority Critical patent/NL143116C/xx
Priority to NL89591D priority patent/NL89591C/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB2930447A priority patent/GB635385A/en
Priority to FR974510D priority patent/FR974510A/en
Publication of GB635385A publication Critical patent/GB635385A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0635385/III/1> A semi-conducting element for a crystal contact device is made in the form of a globule by fusing material, such as germanium or silicon in a mould in an inert atmosphere or in a vacuum. The mould comprises a carbon or refractory block 1 containing holes 3, which are filled to the level of the mould face 2.
GB2930447A 1947-11-03 1947-11-03 Improvements in or relating to methods of manufacturing crystal contact devices Expired GB635385A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL143116D NL143116C (en) 1947-11-03
NL89591D NL89591C (en) 1947-11-03
GB2930447A GB635385A (en) 1947-11-03 1947-11-03 Improvements in or relating to methods of manufacturing crystal contact devices
FR974510D FR974510A (en) 1947-11-03 1948-11-03 Crystal contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2930447A GB635385A (en) 1947-11-03 1947-11-03 Improvements in or relating to methods of manufacturing crystal contact devices

Publications (1)

Publication Number Publication Date
GB635385A true GB635385A (en) 1950-04-05

Family

ID=10289418

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2930447A Expired GB635385A (en) 1947-11-03 1947-11-03 Improvements in or relating to methods of manufacturing crystal contact devices

Country Status (3)

Country Link
FR (1) FR974510A (en)
GB (1) GB635385A (en)
NL (2) NL143116C (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE904220C (en) * 1951-05-03 1954-02-15 Gen Electric Co Ltd Method of manufacturing a germanium body for a crystal contact device
US2723370A (en) * 1950-10-06 1955-11-08 Hazeltine Research Inc Electrically semiconductive crystalline body
DE1014233B (en) * 1952-08-27 1957-08-22 Philips Nv Semiconductor arrangement with tip electrodes and with an egg-shaped semiconducting body
US2864139A (en) * 1953-05-19 1958-12-16 Texas Instruments Inc Method and apparatus for producing intermediate semi-conductor product
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors
DE1171991B (en) * 1962-01-10 1964-06-11 Masamichi Enomoto Process for the production of semiconductor bodies for semiconductor components

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2723370A (en) * 1950-10-06 1955-11-08 Hazeltine Research Inc Electrically semiconductive crystalline body
DE904220C (en) * 1951-05-03 1954-02-15 Gen Electric Co Ltd Method of manufacturing a germanium body for a crystal contact device
DE1014233B (en) * 1952-08-27 1957-08-22 Philips Nv Semiconductor arrangement with tip electrodes and with an egg-shaped semiconducting body
US2864139A (en) * 1953-05-19 1958-12-16 Texas Instruments Inc Method and apparatus for producing intermediate semi-conductor product
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors
DE1171991B (en) * 1962-01-10 1964-06-11 Masamichi Enomoto Process for the production of semiconductor bodies for semiconductor components

Also Published As

Publication number Publication date
FR974510A (en) 1951-02-23
NL143116C (en)
NL89591C (en)

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