GB615616A - Improvements in and relating to selenium rectifiers - Google Patents
Improvements in and relating to selenium rectifiersInfo
- Publication number
- GB615616A GB615616A GB1564144A GB1564144A GB615616A GB 615616 A GB615616 A GB 615616A GB 1564144 A GB1564144 A GB 1564144A GB 1564144 A GB1564144 A GB 1564144A GB 615616 A GB615616 A GB 615616A
- Authority
- GB
- United Kingdom
- Prior art keywords
- iodine
- per cent
- proportions
- added
- elementary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052711 selenium Inorganic materials 0.000 title abstract 2
- 239000011669 selenium Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 abstract 2
- RZCJSVRGPHXBSM-UHFFFAOYSA-N 8-chloro-[1,3]dioxolo[4,5-g]quinazoline Chemical compound C1=C2C(Cl)=NC=NC2=CC2=C1OCO2 RZCJSVRGPHXBSM-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- BIZCJSDBWZTASZ-UHFFFAOYSA-N iodine pentoxide Inorganic materials O=I(=O)OI(=O)=O BIZCJSDBWZTASZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
615,616. Asymmetrically-conducting resistances. MONATH, A. M. Aug. 16, 1944, No. 15641. [Class 37] A process of manufacturing selenium rectifiers comprises mixing iodine, in its elementary form or as a heat decomposable compound, in proportions of 0.05 to 0.2 per cent of elementary iodine, and applying high pressure of not less than 50 lbs. per sq. in. during the first part of an annealing process at about 100‹ to 150‹ C., whereby the rectification ratio of the element, after annealing and before the application of the counter electrode, is substantially increased by an electrical forming process. The baseplate used may be of nickel-coated iron. The iodine may be added in the form of iodine pentoxide in proportions of 0.15 to 0.25 per cent. In a modification, iodine within the range of 0.05 to 0.13 per cent is added, mixed with an equal quantity of selenium dioxide. Specification 472,961 is referred to. Reference has been directed by the Comptroller to Speciftcation 563,338.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1564144A GB615616A (en) | 1944-08-16 | 1944-08-16 | Improvements in and relating to selenium rectifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1564144A GB615616A (en) | 1944-08-16 | 1944-08-16 | Improvements in and relating to selenium rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB615616A true GB615616A (en) | 1949-01-10 |
Family
ID=10062802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1564144A Expired GB615616A (en) | 1944-08-16 | 1944-08-16 | Improvements in and relating to selenium rectifiers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB615616A (en) |
-
1944
- 1944-08-16 GB GB1564144A patent/GB615616A/en not_active Expired
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