GB597897A - Improvements in crystal contacts of which one element is silicon - Google Patents
Improvements in crystal contacts of which one element is siliconInfo
- Publication number
- GB597897A GB597897A GB1004545A GB1004545A GB597897A GB 597897 A GB597897 A GB 597897A GB 1004545 A GB1004545 A GB 1004545A GB 1004545 A GB1004545 A GB 1004545A GB 597897 A GB597897 A GB 597897A
- Authority
- GB
- United Kingdom
- Prior art keywords
- hydrofluoric acid
- silicon
- solution
- dipped
- silicon element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 6
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
597,897. Detectors. GENERAL ELECTRIC CO., Ltd., BRITTAIN, F. H., RANSLEY, C. E., and RYDE, J. W. April 20, 1945, No. 10045. [Class 40 (v)] A crystal contact for use when rectifying or mixing electrical oscillations, comprises a silicon element, the surface of which is subjected to a process of controlled oxidation to modify its electrical characteristics. In one method of manufacture, the contact surface of the silicon element is polished and may be etched by being dipped into a solution of hydrofluoric acid. The element is then heated in air to about 1050‹ C. for about two hours, allowed to cool and then again dipped in the solution of hydrofluoric acid for five minutes. The process results in the production of a thin oxide layer, part of which is later removed by the hydrofluoric acid or other oxide removing chemical agent. Specifications 577,181, [Group III], 578,116 and 581,130 are referred to.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL34436D NL34436C (en) | 1945-04-20 | ||
| US766900A US2583681A (en) | 1945-04-20 | 1947-08-06 | Crystal contacts of which one element is silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB597897A true GB597897A (en) | 1948-02-05 |
Family
ID=1695549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1004545A Expired GB597897A (en) | 1945-04-20 | 1945-04-20 | Improvements in crystal contacts of which one element is silicon |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB597897A (en) |
-
1945
- 1945-04-20 GB GB1004545A patent/GB597897A/en not_active Expired
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