GB589592A - Improvements in crystal contacts of which one element is silicon - Google Patents

Improvements in crystal contacts of which one element is silicon

Info

Publication number
GB589592A
GB589592A GB6854/41A GB685441A GB589592A GB 589592 A GB589592 A GB 589592A GB 6854/41 A GB6854/41 A GB 6854/41A GB 685441 A GB685441 A GB 685441A GB 589592 A GB589592 A GB 589592A
Authority
GB
United Kingdom
Prior art keywords
silicon
crystal
crystal contacts
tantalum
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6854/41A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE466716D priority Critical patent/BE466716A/xx
Priority to BE466775D priority patent/BE466775A/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB6854/41A priority patent/GB589592A/en
Priority to GB6118/42A priority patent/GB594394A/en
Priority to GB3375/43A priority patent/GB580683A/en
Priority to US446310A priority patent/US2419966A/en
Priority to FR927272D priority patent/FR927272A/fr
Priority to FR54562D priority patent/FR54562E/fr
Priority to FR54765D priority patent/FR54765E/fr
Priority to CH263775D priority patent/CH263775A/de
Publication of GB589592A publication Critical patent/GB589592A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
GB6854/41A 1941-05-28 1941-05-28 Improvements in crystal contacts of which one element is silicon Expired GB589592A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
BE466716D BE466716A (xx) 1941-05-28
BE466775D BE466775A (xx) 1941-05-28
GB6854/41A GB589592A (en) 1941-05-28 1941-05-28 Improvements in crystal contacts of which one element is silicon
GB6118/42A GB594394A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon
GB3375/43A GB580683A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon
US446310A US2419966A (en) 1941-05-28 1942-06-08 Crystal contacts of which one element is silicon
FR927272D FR927272A (fr) 1941-05-28 1946-05-23 Contact à cristal
FR54562D FR54562E (fr) 1941-05-28 1946-05-25 Contact à cristal
FR54765D FR54765E (fr) 1941-05-28 1946-05-28 Contacts à cristal pour redresseurs
CH263775D CH263775A (de) 1941-05-28 1946-08-21 Verfahren zur Herstellung der Siliziumkörper von Kristallgleichrichtern.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6854/41A GB589592A (en) 1941-05-28 1941-05-28 Improvements in crystal contacts of which one element is silicon

Publications (1)

Publication Number Publication Date
GB589592A true GB589592A (en) 1947-06-25

Family

ID=9821958

Family Applications (3)

Application Number Title Priority Date Filing Date
GB6854/41A Expired GB589592A (en) 1941-05-28 1941-05-28 Improvements in crystal contacts of which one element is silicon
GB3375/43A Expired GB580683A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon
GB6118/42A Expired GB594394A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB3375/43A Expired GB580683A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon
GB6118/42A Expired GB594394A (en) 1941-05-28 1942-05-06 Improvements in crystal contacts of which one element is silicon

Country Status (5)

Country Link
US (1) US2419966A (xx)
BE (2) BE466716A (xx)
CH (1) CH263775A (xx)
FR (3) FR927272A (xx)
GB (3) GB589592A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
US2967115A (en) * 1958-07-25 1961-01-03 Gen Electric Method of depositing silicon on a silica coated substrate
US3004835A (en) * 1958-11-20 1961-10-17 Mallinckrodt Chemical Works Method of preparing silicon rods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE18579E (en) * 1932-08-23 Demodulator and method op demodulation
US830738A (en) * 1905-04-21 1906-09-11 Geo Westinghouse Method of melting and casting silicon.
US1180968A (en) * 1912-09-18 1916-04-25 Carborundum Co Process for purifying silicon.
US1386227A (en) * 1919-09-26 1921-08-02 Electro Metallurg Co Process of refining crude electric-furnace silicon
US1708571A (en) * 1925-02-21 1929-04-09 Carborundum Co Rectifying element

Also Published As

Publication number Publication date
FR927272A (fr) 1947-10-24
US2419966A (en) 1947-05-06
CH263775A (de) 1949-09-15
GB580683A (en) 1946-09-17
FR54562E (fr) 1950-05-04
GB594394A (en) 1947-11-11
FR54765E (fr) 1950-08-01
BE466775A (xx)
BE466716A (xx)

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