BE466775A - - Google Patents
Info
- Publication number
- BE466775A BE466775A BE466775DA BE466775A BE 466775 A BE466775 A BE 466775A BE 466775D A BE466775D A BE 466775DA BE 466775 A BE466775 A BE 466775A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB6854/41A GB589592A (en) | 1941-05-28 | 1941-05-28 | Improvements in crystal contacts of which one element is silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
BE466775A true BE466775A (xx) |
Family
ID=9821958
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE466775D BE466775A (xx) | 1941-05-28 | ||
BE466716D BE466716A (xx) | 1941-05-28 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE466716D BE466716A (xx) | 1941-05-28 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2419966A (xx) |
BE (2) | BE466716A (xx) |
CH (1) | CH263775A (xx) |
FR (3) | FR927272A (xx) |
GB (3) | GB589592A (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
US2967115A (en) * | 1958-07-25 | 1961-01-03 | Gen Electric | Method of depositing silicon on a silica coated substrate |
US3004835A (en) * | 1958-11-20 | 1961-10-17 | Mallinckrodt Chemical Works | Method of preparing silicon rods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE18579E (en) * | 1932-08-23 | Demodulator and method op demodulation | ||
US830738A (en) * | 1905-04-21 | 1906-09-11 | Geo Westinghouse | Method of melting and casting silicon. |
US1180968A (en) * | 1912-09-18 | 1916-04-25 | Carborundum Co | Process for purifying silicon. |
US1386227A (en) * | 1919-09-26 | 1921-08-02 | Electro Metallurg Co | Process of refining crude electric-furnace silicon |
US1708571A (en) * | 1925-02-21 | 1929-04-09 | Carborundum Co | Rectifying element |
-
0
- BE BE466775D patent/BE466775A/xx unknown
- BE BE466716D patent/BE466716A/xx unknown
-
1941
- 1941-05-28 GB GB6854/41A patent/GB589592A/en not_active Expired
-
1942
- 1942-05-06 GB GB6118/42A patent/GB594394A/en not_active Expired
- 1942-05-06 GB GB3375/43A patent/GB580683A/en not_active Expired
- 1942-06-08 US US446310A patent/US2419966A/en not_active Expired - Lifetime
-
1946
- 1946-05-23 FR FR927272D patent/FR927272A/fr not_active Expired
- 1946-05-25 FR FR54562D patent/FR54562E/fr not_active Expired
- 1946-05-28 FR FR54765D patent/FR54765E/fr not_active Expired
- 1946-08-21 CH CH263775D patent/CH263775A/de unknown
Also Published As
Publication number | Publication date |
---|---|
BE466716A (xx) | |
GB589592A (en) | 1947-06-25 |
US2419966A (en) | 1947-05-06 |
CH263775A (de) | 1949-09-15 |
FR54562E (fr) | 1950-05-04 |
FR54765E (fr) | 1950-08-01 |
FR927272A (fr) | 1947-10-24 |
GB580683A (en) | 1946-09-17 |
GB594394A (en) | 1947-11-11 |