GB486829A - Improvements in electrode systems with unsymmetrical conductivity - Google Patents

Improvements in electrode systems with unsymmetrical conductivity

Info

Publication number
GB486829A
GB486829A GB22000/37A GB2200037A GB486829A GB 486829 A GB486829 A GB 486829A GB 22000/37 A GB22000/37 A GB 22000/37A GB 2200037 A GB2200037 A GB 2200037A GB 486829 A GB486829 A GB 486829A
Authority
GB
United Kingdom
Prior art keywords
selenium
substance
blocking layer
layer
halides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22000/37A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB486829A publication Critical patent/GB486829A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

Landscapes

  • Hybrid Cells (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Battery Electrode And Active Subsutance (AREA)
GB22000/37A 1936-08-13 1937-08-10 Improvements in electrode systems with unsymmetrical conductivity Expired GB486829A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP2083D DE1079209B (de) 1936-08-13 1936-08-13 Elektrodensystem mit unsymmetrischer Leitfaehigkeit und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
GB486829A true GB486829A (en) 1938-06-10

Family

ID=25989691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22000/37A Expired GB486829A (en) 1936-08-13 1937-08-10 Improvements in electrode systems with unsymmetrical conductivity

Country Status (7)

Country Link
US (1) US2162613A (enExample)
BE (1) BE423105A (enExample)
CH (1) CH203236A (enExample)
DE (1) DE1079209B (enExample)
FR (1) FR826933A (enExample)
GB (1) GB486829A (enExample)
NL (2) NL52391C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
NL57010C (enExample) * 1941-05-01
DE961365C (de) * 1941-12-13 1957-04-04 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2462157A (en) * 1943-11-10 1949-02-22 Westinghouse Electric Corp Method of eliminating porosity in crystalline selenium films
BE464100A (enExample) * 1944-04-06 1900-01-01
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
GB600053A (en) * 1944-11-02 1948-03-30 Standard Telephones Cables Ltd Improvements in or relating to selenium rectifiers
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
DE841174C (de) * 1948-10-02 1952-06-13 Siemens Ag Halbleiteranordnung
US2872357A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
US2872358A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Also Published As

Publication number Publication date
NL52391C (enExample) 1900-01-01
US2162613A (en) 1939-06-13
BE423105A (enExample) 1900-01-01
NL83633B (enExample) 1900-01-01
DE1079209B (de) 1960-04-07
CH203236A (de) 1939-02-28
FR826933A (fr) 1938-04-13

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