GB373849A - Improvements in or relating to electrical rectifiers - Google Patents

Improvements in or relating to electrical rectifiers

Info

Publication number
GB373849A
GB373849A GB21708/31A GB2170831A GB373849A GB 373849 A GB373849 A GB 373849A GB 21708/31 A GB21708/31 A GB 21708/31A GB 2170831 A GB2170831 A GB 2170831A GB 373849 A GB373849 A GB 373849A
Authority
GB
United Kingdom
Prior art keywords
layers
iodide
bromide
silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21708/31A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB373849A publication Critical patent/GB373849A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Abstract

373,849. Static contact rectifiers. AUDUBERT, R., 57 bis, Rue du Theatre, Paris. July 29, 1931, No. 21708. Convention date, Dec. 30, 1930. [Class 37.] In a dry contact rectifier two copper plates 1, 4 compress the rectifying layers which consist of a layer 3 of silicon and a layer 2 of copper bromide or iodide. The action is stabilized by adding to the bromide or iodide ; manganese dioxide or zinc or nickel oxide to polarize the silicon layer. The silicon and iodide or bromide layers may be used in the form of plates of the material agglomerated with a binder, in layers of powder or in layers of powder combined with binding agents such as a varnish having a synthetic resin basis, shellac, copal or the like. The powders or agglomerates may be applied to a support of paper or fabric.
GB21708/31A 1930-12-30 1931-07-29 Improvements in or relating to electrical rectifiers Expired GB373849A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR610126X 1930-12-30

Publications (1)

Publication Number Publication Date
GB373849A true GB373849A (en) 1932-06-02

Family

ID=8977193

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21708/31A Expired GB373849A (en) 1930-12-30 1931-07-29 Improvements in or relating to electrical rectifiers

Country Status (5)

Country Link
BE (1) BE383310A (en)
DE (1) DE610126C (en)
FR (1) FR724845A (en)
GB (1) GB373849A (en)
NL (1) NL35820C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1000532B (en) * 1953-12-03 1957-01-10 Siemens Ag High-current selenium rectifier arrangement with external cooling, especially for resistance welding machines

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL246765A (en) * 1958-12-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1000532B (en) * 1953-12-03 1957-01-10 Siemens Ag High-current selenium rectifier arrangement with external cooling, especially for resistance welding machines

Also Published As

Publication number Publication date
DE610126C (en) 1935-03-06
NL35820C (en)
FR724845A (en) 1932-05-03
BE383310A (en)

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