GB2616808A - Phase change memory cell with projection liner - Google Patents

Phase change memory cell with projection liner Download PDF

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Publication number
GB2616808A
GB2616808A GB2310210.6A GB202310210A GB2616808A GB 2616808 A GB2616808 A GB 2616808A GB 202310210 A GB202310210 A GB 202310210A GB 2616808 A GB2616808 A GB 2616808A
Authority
GB
United Kingdom
Prior art keywords
layer
heater
phase change
change material
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB2310210.6A
Other versions
GB202310210D0 (en
Inventor
Ok Injo
Bao Ruqiang
Herbert Simon Andrew
Brew Kevin
Saulnier Nicole
Rashid Saraf Iqbal
Bhosale Prasad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB202310210D0 publication Critical patent/GB202310210D0/en
Publication of GB2616808A publication Critical patent/GB2616808A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/14—Thermal energy storage

Abstract

A semiconductor structure (100) includes a heater (116) surrounded by a second dielectric layer (114), a projection liner (124) on top of the second dielectric layer (114), and a phase change material layer (126) above the projection liner(124). A top surface of the projection liner (124) is substantially flush with a top surface of the heater (116). The projection liner (124) separates the phase change material layer (126) from the second dielectric layer (114). The projection liner (124) may provide a parallel conduction path in a crystalline phase (126a) and an amorphous phase (126b) of the phase change material layer (126). The semiconductor structure (100) may include a bottom electrode (110) below and in electrical contact with the heater (116) and a top electrode (128) above and in electrical contact with the phase change material layer (126).

Claims (20)

1. A structure comprising: a heater surrounded by a second dielectric layer; a projection liner on top of the second dielectric layer, wherein a top surface of the projection liner is substantially flush with a top surface of the heater; and a phase change material layer above the projection liner, the projection liner separates the phase change material layer from the second dielectric layer.
2. The structure of claim 1 , further comprising: a bottom electrode below and in electrical contact with the heater; and a top electrode above and in electrical contact with the phase change material layer.
3. The structure of claim 2, further comprising: a mask layer above and in direct contact with the top electrode; a top electrode contact above and in electrical contact with the top electrode; and a bottom electrode contact below and in electrical contact with the bottom electrode.
4. The structure of claim 1 , wherein the phase change material layer includes a crystalline phase and an amorphous phase, wherein the amorphous phase is directly above the heater.
5. The structure of claim 4, wherein the projection liner provides a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer.
6. The structure of claim 4, wherein the projection liner laterally extends beyond the amorphous phase of the phase change material layer.
7. The structure of claim 1, wherein the heater comprises: an outer layer; a middle layer, wherein the middle layer is between the outer layer and an inner layer; and the inner layer, wherein the inner layer is surrounded by the middle layer.
8. A structure comprising: a heater within a second dielectric layer, wherein a top portion of the heater vertically extends above the second dielectric layer; a projection liner on top of the second dielectric layer, the projection liner is on top and in direct contact with the top portion of the heater that vertically extends above the second dielectric layer; and a phase change material layer above the projection liner, the projection liner separates the phase change material layer from the heater and the second dielectric layer.
9. The structure of claim 8, further comprising: a bottom electrode below and in electrical contact with the heater; and a top electrode above and in electrical contact with the phase change material layer.
10. The structure of claim 9, further comprising: a mask layer above and in direct contact with the top electrode; a top electrode contact above and in electrical contact with the top electrode; and a bottom electrode contact below and in electrical contact with the bottom electrode.
11 . The structure of claim 8, wherein the phase change material layer includes a crystalline phase and an amorphous phase, wherein the amorphous phase is directly above the heater.
12. The structure of claim 11, wherein the projection liner provides a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer.
13. The structure of claim 11, wherein the projection liner laterally extends beyond the amorphous phase of the phase change material layer.
14. The structure of claim 8, wherein the heater comprises: an outer layer; a middle layer, wherein the middle layer is between the outer layer and an inner layer; and the inner layer, wherein the inner layer is surrounded by the middle layer.
15. A structure comprising: a heater within a second dielectric layer, wherein a top portion of the heater vertically extends above the second dielectric layer; and a phase change material layer above and in direct contact with the second dielectric layer.
16. The structure of claim 15, further comprising: a bottom electrode below and in electrical contact with the heater; and a top electrode above and in electrical contact with the phase change material layer. 16
17. The structure of claim 16, further comprising: a mask layer above and in direct contact with the top electrode; a top electrode contact above and in electrical contact with the top electrode; and a bottom electrode contact below and in electrical contact with the bottom electrode.
18. The structure of claim 15, wherein the phase change material layer includes a crystalline phase and an amorphous phase, wherein the amorphous phase is directly above the heater.
19. The structure of claim 15, wherein the heater comprises: an outer layer; a middle layer, wherein the middle layer is between the outer layer and an inner layer; and the inner layer, wherein the inner layer is surrounded by the middle layer.
20. The structure of claim 16, further comprising: a first metal layer below and in electrical contact with the bottom electrode contact; a second metal layer above and in electrical contact with the top electrode contact; and a via contact between and in electrical contact with the first metal layer and the second metal layer.
GB2310210.6A 2020-12-08 2021-11-18 Phase change memory cell with projection liner Pending GB2616808A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/114,605 US11476418B2 (en) 2020-12-08 2020-12-08 Phase change memory cell with a projection liner
PCT/IB2021/060700 WO2022123367A1 (en) 2020-12-08 2021-11-18 Phase change memory cell with projection liner

Publications (2)

Publication Number Publication Date
GB202310210D0 GB202310210D0 (en) 2023-08-16
GB2616808A true GB2616808A (en) 2023-09-20

Family

ID=81850526

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2310210.6A Pending GB2616808A (en) 2020-12-08 2021-11-18 Phase change memory cell with projection liner

Country Status (6)

Country Link
US (1) US11476418B2 (en)
JP (1) JP2023552038A (en)
CN (1) CN116569667A (en)
DE (1) DE112021005571T5 (en)
GB (1) GB2616808A (en)
WO (1) WO2022123367A1 (en)

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GB2619651A (en) * 2021-03-29 2023-12-13 Ibm Phase change memory cell with resistive liner

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US11430954B2 (en) * 2020-11-30 2022-08-30 International Business Machines Corporation Resistance drift mitigation in non-volatile memory cell
IT202200001130A1 (en) * 2022-01-24 2023-07-24 St Microelectronics Srl PHASE CHANGE MEMORY CELL WITH ASYMMETRIC STRUCTURE, MEMORY DEVICE INCLUDING THE PHASE CHANGE MEMORY CELL, AND METHOD FOR MANUFACTURING THE PHASE CHANGE MEMORY CELL

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Also Published As

Publication number Publication date
GB202310210D0 (en) 2023-08-16
US11476418B2 (en) 2022-10-18
DE112021005571T5 (en) 2023-08-17
JP2023552038A (en) 2023-12-14
CN116569667A (en) 2023-08-08
US20220181547A1 (en) 2022-06-09
WO2022123367A1 (en) 2022-06-16

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