TW200744205A - Phase change memory and method of fabricating thereof - Google Patents
Phase change memory and method of fabricating thereofInfo
- Publication number
- TW200744205A TW200744205A TW095117416A TW95117416A TW200744205A TW 200744205 A TW200744205 A TW 200744205A TW 095117416 A TW095117416 A TW 095117416A TW 95117416 A TW95117416 A TW 95117416A TW 200744205 A TW200744205 A TW 200744205A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- phase change
- disposed
- dielectric layer
- heat
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
A phase change memory (PCM) device comprising a bottom electrode, a dielectric layer, a heat electrode, a conductive spacer, a phase change material and a top electrode is provided. The bottom electrode is disposed on a substrate. The dielectric layer is disposed on the bottom electrode. The heater is disposed in the dielectric and the bottom of the heat electrode is contacted with the bottom electrode. The height of the top surface of the heat electrode is higher than that of the top surface of the dielectric layer. The conductive spacer is disposed on the sidewall of the heat electrode and on the dielectric layer. The resistance of the conductive spacer is higher than that of the heat electrode. The phase change material is disposed on the dielectric layer and covered the conductive spacer and the heat electrode. The top electrode is disposed on the phase change material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95117416A TWI299567B (en) | 2006-05-17 | 2006-05-17 | Phase change memory and method of fabricating thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95117416A TWI299567B (en) | 2006-05-17 | 2006-05-17 | Phase change memory and method of fabricating thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200744205A true TW200744205A (en) | 2007-12-01 |
TWI299567B TWI299567B (en) | 2008-08-01 |
Family
ID=45069724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95117416A TWI299567B (en) | 2006-05-17 | 2006-05-17 | Phase change memory and method of fabricating thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI299567B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022123367A1 (en) * | 2020-12-08 | 2022-06-16 | International Business Machines Corporation | Phase change memory cell with projection liner |
US11456415B2 (en) | 2020-12-08 | 2022-09-27 | International Business Machines Corporation | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11430954B2 (en) * | 2020-11-30 | 2022-08-30 | International Business Machines Corporation | Resistance drift mitigation in non-volatile memory cell |
-
2006
- 2006-05-17 TW TW95117416A patent/TWI299567B/en active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022123367A1 (en) * | 2020-12-08 | 2022-06-16 | International Business Machines Corporation | Phase change memory cell with projection liner |
US11456415B2 (en) | 2020-12-08 | 2022-09-27 | International Business Machines Corporation | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner |
US11476418B2 (en) | 2020-12-08 | 2022-10-18 | International Business Machines Corporation | Phase change memory cell with a projection liner |
GB2616808A (en) * | 2020-12-08 | 2023-09-20 | Ibm | Phase change memory cell with projection liner |
Also Published As
Publication number | Publication date |
---|---|
TWI299567B (en) | 2008-08-01 |
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