TW200744205A - Phase change memory and method of fabricating thereof - Google Patents

Phase change memory and method of fabricating thereof

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Publication number
TW200744205A
TW200744205A TW095117416A TW95117416A TW200744205A TW 200744205 A TW200744205 A TW 200744205A TW 095117416 A TW095117416 A TW 095117416A TW 95117416 A TW95117416 A TW 95117416A TW 200744205 A TW200744205 A TW 200744205A
Authority
TW
Taiwan
Prior art keywords
electrode
phase change
disposed
dielectric layer
heat
Prior art date
Application number
TW095117416A
Other languages
Chinese (zh)
Other versions
TWI299567B (en
Inventor
Chung-Yi Chen
Ming-Yu Lin
Ching-Hung Fu
Yueh-Chi Wu
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW95117416A priority Critical patent/TWI299567B/en
Publication of TW200744205A publication Critical patent/TW200744205A/en
Application granted granted Critical
Publication of TWI299567B publication Critical patent/TWI299567B/en

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  • Semiconductor Memories (AREA)

Abstract

A phase change memory (PCM) device comprising a bottom electrode, a dielectric layer, a heat electrode, a conductive spacer, a phase change material and a top electrode is provided. The bottom electrode is disposed on a substrate. The dielectric layer is disposed on the bottom electrode. The heater is disposed in the dielectric and the bottom of the heat electrode is contacted with the bottom electrode. The height of the top surface of the heat electrode is higher than that of the top surface of the dielectric layer. The conductive spacer is disposed on the sidewall of the heat electrode and on the dielectric layer. The resistance of the conductive spacer is higher than that of the heat electrode. The phase change material is disposed on the dielectric layer and covered the conductive spacer and the heat electrode. The top electrode is disposed on the phase change material.
TW95117416A 2006-05-17 2006-05-17 Phase change memory and method of fabricating thereof TWI299567B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95117416A TWI299567B (en) 2006-05-17 2006-05-17 Phase change memory and method of fabricating thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95117416A TWI299567B (en) 2006-05-17 2006-05-17 Phase change memory and method of fabricating thereof

Publications (2)

Publication Number Publication Date
TW200744205A true TW200744205A (en) 2007-12-01
TWI299567B TWI299567B (en) 2008-08-01

Family

ID=45069724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95117416A TWI299567B (en) 2006-05-17 2006-05-17 Phase change memory and method of fabricating thereof

Country Status (1)

Country Link
TW (1) TWI299567B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022123367A1 (en) * 2020-12-08 2022-06-16 International Business Machines Corporation Phase change memory cell with projection liner
US11456415B2 (en) 2020-12-08 2022-09-27 International Business Machines Corporation Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11430954B2 (en) * 2020-11-30 2022-08-30 International Business Machines Corporation Resistance drift mitigation in non-volatile memory cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022123367A1 (en) * 2020-12-08 2022-06-16 International Business Machines Corporation Phase change memory cell with projection liner
US11456415B2 (en) 2020-12-08 2022-09-27 International Business Machines Corporation Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner
US11476418B2 (en) 2020-12-08 2022-10-18 International Business Machines Corporation Phase change memory cell with a projection liner
GB2616808A (en) * 2020-12-08 2023-09-20 Ibm Phase change memory cell with projection liner

Also Published As

Publication number Publication date
TWI299567B (en) 2008-08-01

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