GB2602119B - A method of producing an electronic device precursor - Google Patents

A method of producing an electronic device precursor Download PDF

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Publication number
GB2602119B
GB2602119B GB2020131.5A GB202020131A GB2602119B GB 2602119 B GB2602119 B GB 2602119B GB 202020131 A GB202020131 A GB 202020131A GB 2602119 B GB2602119 B GB 2602119B
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GB
United Kingdom
Prior art keywords
producing
electronic device
device precursor
precursor
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2020131.5A
Other versions
GB202020131D0 (en
GB2602119A (en
Inventor
Baines Rosie
Yi Lee Lok
Glass Hugh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to GB2020131.5A priority Critical patent/GB2602119B/en
Publication of GB202020131D0 publication Critical patent/GB202020131D0/en
Priority to GBGB2107674.0A priority patent/GB202107674D0/en
Priority to GB2109011.3A priority patent/GB2602174B/en
Priority to JP2023537063A priority patent/JP2023553733A/en
Priority to PCT/EP2021/086642 priority patent/WO2022129606A1/en
Priority to KR1020237024543A priority patent/KR20230118683A/en
Priority to US18/258,174 priority patent/US20240130248A1/en
Priority to PCT/EP2021/086593 priority patent/WO2022129570A1/en
Priority to EP21840905.0A priority patent/EP4264693A1/en
Priority to DE112021006520.3T priority patent/DE112021006520T5/en
Priority to US18/268,567 priority patent/US20240040937A1/en
Publication of GB2602119A publication Critical patent/GB2602119A/en
Application granted granted Critical
Publication of GB2602119B publication Critical patent/GB2602119B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
GB2020131.5A 2020-12-18 2020-12-18 A method of producing an electronic device precursor Active GB2602119B (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
GB2020131.5A GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor
GBGB2107674.0A GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor
GB2109011.3A GB2602174B (en) 2020-12-18 2021-06-23 Hall sensor
US18/258,174 US20240130248A1 (en) 2020-12-18 2021-12-17 Graphene hall sensor, fabrication and use thereof
PCT/EP2021/086642 WO2022129606A1 (en) 2020-12-18 2021-12-17 Method of producing a graphene electronic device precursor
KR1020237024543A KR20230118683A (en) 2020-12-18 2021-12-17 Methods for fabricating graphene electronic device precursors
JP2023537063A JP2023553733A (en) 2020-12-18 2021-12-17 Method for producing electronic device precursor
PCT/EP2021/086593 WO2022129570A1 (en) 2020-12-18 2021-12-17 Graphene hall sensor, fabrication and use thereof
EP21840905.0A EP4264693A1 (en) 2020-12-18 2021-12-17 Method of producing a graphene electronic device precursor
DE112021006520.3T DE112021006520T5 (en) 2020-12-18 2021-12-17 GRAPHENE HALL SENSOR, PRODUCTION AND USE THEREOF
US18/268,567 US20240040937A1 (en) 2020-12-18 2021-12-17 Method of producing an electronic device precursor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2020131.5A GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor

Publications (3)

Publication Number Publication Date
GB202020131D0 GB202020131D0 (en) 2021-02-03
GB2602119A GB2602119A (en) 2022-06-22
GB2602119B true GB2602119B (en) 2023-02-15

Family

ID=74221422

Family Applications (3)

Application Number Title Priority Date Filing Date
GB2020131.5A Active GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor
GBGB2107674.0A Ceased GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor
GB2109011.3A Active GB2602174B (en) 2020-12-18 2021-06-23 Hall sensor

Family Applications After (2)

Application Number Title Priority Date Filing Date
GBGB2107674.0A Ceased GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor
GB2109011.3A Active GB2602174B (en) 2020-12-18 2021-06-23 Hall sensor

Country Status (1)

Country Link
GB (3) GB2602119B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB202115100D0 (en) * 2021-10-21 2021-12-08 Paragraf Ltd Magnetoresistive sensor
WO2023237561A1 (en) 2022-06-08 2023-12-14 Paragraf Limited A thermally stable graphene-containing laminate
CN116236206B (en) * 2023-05-10 2023-08-11 苏州浪潮智能科技有限公司 Nerve microelectrode and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultralow ohmic contact resistance graphene transistor and preparation method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultralow ohmic contact resistance graphene transistor and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Carbon 139, 2018, Ciuk et al, "Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements", pages 776-781. *
Journal of the Electron Devices Society, Volume 8, 2020, ASAD et al., "Dependence of High-Frequency Performance of Graphene Field-Effect Transistors", pages 457-464. *

Also Published As

Publication number Publication date
GB2602174B (en) 2023-08-23
GB202020131D0 (en) 2021-02-03
GB2602174A (en) 2022-06-22
GB202107674D0 (en) 2021-07-14
GB202109011D0 (en) 2021-08-04
GB2602119A (en) 2022-06-22

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