GB2613923B - A method of producing an electronic device precursor - Google Patents

A method of producing an electronic device precursor Download PDF

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Publication number
GB2613923B
GB2613923B GB2213912.5A GB202213912A GB2613923B GB 2613923 B GB2613923 B GB 2613923B GB 202213912 A GB202213912 A GB 202213912A GB 2613923 B GB2613923 B GB 2613923B
Authority
GB
United Kingdom
Prior art keywords
producing
electronic device
device precursor
precursor
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2213912.5A
Other versions
GB2613923A (en
GB202213912D0 (en
Inventor
Baines Rosie
Frederick John Glass Hugh
Kainth Jaspreet
Buttress Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2115100.6A external-priority patent/GB202115100D0/en
Priority claimed from GBGB2203362.5A external-priority patent/GB202203362D0/en
Priority claimed from GBGB2212650.2A external-priority patent/GB202212650D0/en
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to PCT/GB2022/052601 priority Critical patent/WO2023067309A1/en
Priority to TW111138985A priority patent/TW202326863A/en
Publication of GB202213912D0 publication Critical patent/GB202213912D0/en
Publication of GB2613923A publication Critical patent/GB2613923A/en
Application granted granted Critical
Publication of GB2613923B publication Critical patent/GB2613923B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Magnetic active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
GB2213912.5A 2021-10-21 2022-09-23 A method of producing an electronic device precursor Active GB2613923B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/GB2022/052601 WO2023067309A1 (en) 2021-10-21 2022-10-13 A method of producing an electronic device precursor
TW111138985A TW202326863A (en) 2021-10-21 2022-10-14 A method of producing an electronic device precursor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB2115100.6A GB202115100D0 (en) 2021-10-21 2021-10-21 Magnetoresistive sensor
GBGB2203362.5A GB202203362D0 (en) 2022-03-10 2022-03-10 A method of producing an electronic device precursor
GBGB2212650.2A GB202212650D0 (en) 2022-08-31 2022-08-31 A method of producing an electronic device precursor
GB2212651.0A GB2613922A (en) 2021-10-21 2022-08-31 Magnetoresistive sensor

Publications (3)

Publication Number Publication Date
GB202213912D0 GB202213912D0 (en) 2022-11-09
GB2613923A GB2613923A (en) 2023-06-21
GB2613923B true GB2613923B (en) 2024-03-27

Family

ID=86499168

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2213912.5A Active GB2613923B (en) 2021-10-21 2022-09-23 A method of producing an electronic device precursor

Country Status (1)

Country Link
GB (1) GB2613923B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultralow ohmic contact resistance graphene transistor and preparation method thereof
CN112038215A (en) * 2020-07-28 2020-12-04 中国计量科学研究院 Graphene carrier regulation and control method and graphene quantum Hall device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultralow ohmic contact resistance graphene transistor and preparation method thereof
CN112038215A (en) * 2020-07-28 2020-12-04 中国计量科学研究院 Graphene carrier regulation and control method and graphene quantum Hall device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Physical Review B, vol. 96, 2017, Volkl et al., "Magnetotransport in heterostructures of transition metal dichalcogenides and graphene", pages 125405-1 to 125405-5. *

Also Published As

Publication number Publication date
GB2613923A (en) 2023-06-21
GB202213912D0 (en) 2022-11-09

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