GB2602174B - Hall sensor - Google Patents

Hall sensor Download PDF

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Publication number
GB2602174B
GB2602174B GB2109011.3A GB202109011A GB2602174B GB 2602174 B GB2602174 B GB 2602174B GB 202109011 A GB202109011 A GB 202109011A GB 2602174 B GB2602174 B GB 2602174B
Authority
GB
United Kingdom
Prior art keywords
hall sensor
hall
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2109011.3A
Other versions
GB202109011D0 (en
GB2602174A (en
Inventor
Glass Hugh
David Biddulph Phillip
Baines Rosie
Yi Lee Lok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Publication of GB202109011D0 publication Critical patent/GB202109011D0/en
Priority to JP2023537063A priority Critical patent/JP2023553733A/en
Priority to CN202180085118.7A priority patent/CN116686429A/en
Priority to CN202180090684.7A priority patent/CN116724688A/en
Priority to US18/258,174 priority patent/US20240130248A1/en
Priority to DE112021006520.3T priority patent/DE112021006520T5/en
Priority to PCT/EP2021/086642 priority patent/WO2022129606A1/en
Priority to KR1020237024543A priority patent/KR20230118683A/en
Priority to EP21840905.0A priority patent/EP4264693A1/en
Priority to PCT/EP2021/086593 priority patent/WO2022129570A1/en
Priority to US18/268,567 priority patent/US20240040937A1/en
Publication of GB2602174A publication Critical patent/GB2602174A/en
Application granted granted Critical
Publication of GB2602174B publication Critical patent/GB2602174B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
GB2109011.3A 2020-12-18 2021-06-23 Hall sensor Active GB2602174B (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
CN202180090684.7A CN116724688A (en) 2020-12-18 2021-12-17 Method for producing graphene electronic device precursor
EP21840905.0A EP4264693A1 (en) 2020-12-18 2021-12-17 Method of producing a graphene electronic device precursor
JP2023537063A JP2023553733A (en) 2020-12-18 2021-12-17 Method for producing electronic device precursor
US18/258,174 US20240130248A1 (en) 2020-12-18 2021-12-17 Graphene hall sensor, fabrication and use thereof
DE112021006520.3T DE112021006520T5 (en) 2020-12-18 2021-12-17 GRAPHENE HALL SENSOR, PRODUCTION AND USE THEREOF
PCT/EP2021/086642 WO2022129606A1 (en) 2020-12-18 2021-12-17 Method of producing a graphene electronic device precursor
KR1020237024543A KR20230118683A (en) 2020-12-18 2021-12-17 Methods for fabricating graphene electronic device precursors
CN202180085118.7A CN116686429A (en) 2020-12-18 2021-12-17 Graphene hall sensor and its manufacture and use
PCT/EP2021/086593 WO2022129570A1 (en) 2020-12-18 2021-12-17 Graphene hall sensor, fabrication and use thereof
US18/268,567 US20240040937A1 (en) 2020-12-18 2021-12-17 Method of producing an electronic device precursor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2020131.5A GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor
GBGB2107674.0A GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor

Publications (3)

Publication Number Publication Date
GB202109011D0 GB202109011D0 (en) 2021-08-04
GB2602174A GB2602174A (en) 2022-06-22
GB2602174B true GB2602174B (en) 2023-08-23

Family

ID=74221422

Family Applications (3)

Application Number Title Priority Date Filing Date
GB2020131.5A Active GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor
GBGB2107674.0A Ceased GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor
GB2109011.3A Active GB2602174B (en) 2020-12-18 2021-06-23 Hall sensor

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB2020131.5A Active GB2602119B (en) 2020-12-18 2020-12-18 A method of producing an electronic device precursor
GBGB2107674.0A Ceased GB202107674D0 (en) 2020-12-18 2021-05-28 Hall sensor

Country Status (1)

Country Link
GB (3) GB2602119B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB202115100D0 (en) * 2021-10-21 2021-12-08 Paragraf Ltd Magnetoresistive sensor
WO2023237561A1 (en) 2022-06-08 2023-12-14 Paragraf Limited A thermally stable graphene-containing laminate
CN116236206B (en) * 2023-05-10 2023-08-11 苏州浪潮智能科技有限公司 Nerve microelectrode and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762B (en) * 2014-03-28 2017-02-01 中国电子科技集团公司第十三研究所 Ultralow ohmic contact resistance graphene transistor and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, vol 104, 5 May 2014, American Institute of Physics, Le Huang et al, "Ultra-sensitive graphene Hall elements", pages 183106-1 to 183106-4. Available from https://aip.scitation.org/doi/10.1063/1.4875597 *
PHYSICAL REVIEW B, vol. 96, no. 12, 2017, Völkl T et al., "Magnetotransport in heterostructures of transition metal dichalcogenides and graphene", p. 125405. *

Also Published As

Publication number Publication date
GB2602119A (en) 2022-06-22
GB202109011D0 (en) 2021-08-04
GB2602174A (en) 2022-06-22
GB202107674D0 (en) 2021-07-14
GB2602119B (en) 2023-02-15
GB202020131D0 (en) 2021-02-03

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