GB2550701B - Storage device having an electroplated phase change switch - Google Patents
Storage device having an electroplated phase change switch Download PDFInfo
- Publication number
- GB2550701B GB2550701B GB201709552A GB201709552A GB2550701B GB 2550701 B GB2550701 B GB 2550701B GB 201709552 A GB201709552 A GB 201709552A GB 201709552 A GB201709552 A GB 201709552A GB 2550701 B GB2550701 B GB 2550701B
- Authority
- GB
- United Kingdom
- Prior art keywords
- storage device
- phase change
- change switch
- electroplated
- electroplated phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/10—Phase change RAM [PCRAM, PRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/788,183 US9595669B2 (en) | 2015-06-30 | 2015-06-30 | Electroplated phase change switch |
GB201611062A GB2540048B (en) | 2015-06-30 | 2016-06-24 | Electroplated phase change switch |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201709552D0 GB201709552D0 (en) | 2017-08-02 |
GB2550701A GB2550701A (en) | 2017-11-29 |
GB2550701B true GB2550701B (en) | 2020-01-01 |
Family
ID=56891692
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB201611062A Expired - Fee Related GB2540048B (en) | 2015-06-30 | 2016-06-24 | Electroplated phase change switch |
GB201709552A Expired - Fee Related GB2550701B (en) | 2015-06-30 | 2016-06-24 | Storage device having an electroplated phase change switch |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB201611062A Expired - Fee Related GB2540048B (en) | 2015-06-30 | 2016-06-24 | Electroplated phase change switch |
Country Status (8)
Country | Link |
---|---|
US (2) | US9595669B2 (en) |
JP (1) | JP6472773B2 (en) |
KR (1) | KR101884063B1 (en) |
CN (1) | CN106848059B (en) |
DE (1) | DE102016008075A1 (en) |
FR (1) | FR3038449A1 (en) |
GB (2) | GB2540048B (en) |
TW (1) | TWI642177B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9595669B2 (en) * | 2015-06-30 | 2017-03-14 | Western Digital Technologies, Inc. | Electroplated phase change switch |
US9947721B2 (en) * | 2016-04-01 | 2018-04-17 | Micron Technology, Inc. | Thermal insulation for three-dimensional memory arrays |
WO2018195423A1 (en) * | 2017-04-20 | 2018-10-25 | Micromaterials Llc | Structure with selective barrier layer |
WO2019066829A1 (en) * | 2017-09-28 | 2019-04-04 | Intel Corporation | Direct self-assembly process for formation of selector or memory layers on a vertical rram memory for leakage current minimization |
US10374014B2 (en) | 2017-10-16 | 2019-08-06 | Sandisk Technologies Llc | Multi-state phase change memory device with vertical cross-point structure |
CN109037439B (en) * | 2018-06-28 | 2021-02-09 | 江苏理工学院 | Sn20Sb80/Si multilayer phase-change film material and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294425B1 (en) * | 1999-10-14 | 2001-09-25 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors by electroplating electrodes from seed layers |
US20080175032A1 (en) * | 2007-01-23 | 2008-07-24 | Kabushiki Kaisha Toshiba | Semiconductor memory and method for manufacturing the same |
US20120161094A1 (en) * | 2010-12-22 | 2012-06-28 | Chinese Academy of Science, Institute of Microelectronics | 3d semiconductor memory device and manufacturing method thereof |
US20130248801A1 (en) * | 2012-03-21 | 2013-09-26 | Kazuhiko Yamamoto | Semiconductor memory device with resistance change film and method of manufacturing the same |
WO2014036480A1 (en) * | 2012-08-31 | 2014-03-06 | Micron Technology, Inc. | Three dimensional memory array architecture |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7687830B2 (en) | 2004-09-17 | 2010-03-30 | Ovonyx, Inc. | Phase change memory with ovonic threshold switch |
US7838864B2 (en) | 2006-08-08 | 2010-11-23 | Ovonyx, Inc. | Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays |
JP2008078404A (en) * | 2006-09-21 | 2008-04-03 | Toshiba Corp | Semiconductor memory and manufacturing method thereof |
JP2008160004A (en) * | 2006-12-26 | 2008-07-10 | Toshiba Corp | Semiconductor memory and manufacturing method therefor |
US7785982B2 (en) * | 2007-01-05 | 2010-08-31 | International Business Machines Corporation | Structures containing electrodeposited germanium and methods for their fabrication |
US7918984B2 (en) * | 2007-09-17 | 2011-04-05 | International Business Machines Corporation | Method of electrodepositing germanium compound materials on a substrate |
JP2009081251A (en) * | 2007-09-26 | 2009-04-16 | Panasonic Corp | Resistance change element, production method thereof, and resistance change memory |
JP5086851B2 (en) * | 2008-03-14 | 2012-11-28 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US8351238B2 (en) * | 2008-04-10 | 2013-01-08 | Contour Semiconductor, Inc. | Low-complexity electronic circuits and methods of forming the same |
KR20090109804A (en) * | 2008-04-16 | 2009-10-21 | 삼성전자주식회사 | Non-volatile memory device and method of fabricating the same |
KR20100001260A (en) * | 2008-06-26 | 2010-01-06 | 삼성전자주식회사 | Non-volatile memory device and method of fabricating the same |
KR101424138B1 (en) * | 2008-09-19 | 2014-08-04 | 삼성전자주식회사 | Non-volatile memory device and method of fabricating the same |
KR101573697B1 (en) * | 2009-02-11 | 2015-12-02 | 삼성전자주식회사 | Nonvolatile memory device having vertical folding structure and method of fabricating the same |
US8173987B2 (en) | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US8030130B2 (en) * | 2009-08-14 | 2011-10-04 | International Business Machines Corporation | Phase change memory device with plated phase change material |
US8716780B2 (en) | 2009-11-06 | 2014-05-06 | Rambus Inc. | Three-dimensional memory array stacking structure |
US7943420B1 (en) * | 2009-11-25 | 2011-05-17 | International Business Machines Corporation | Single mask adder phase change memory element |
US8198124B2 (en) * | 2010-01-05 | 2012-06-12 | Micron Technology, Inc. | Methods of self-aligned growth of chalcogenide memory access device |
US8530875B1 (en) | 2010-05-06 | 2013-09-10 | Micron Technology, Inc. | Phase change memory including ovonic threshold switch with layered electrode and methods for forming same |
US8367460B2 (en) * | 2010-06-22 | 2013-02-05 | Micron Technology, Inc. | Horizontally oriented and vertically stacked memory cells |
US9324422B2 (en) * | 2011-04-18 | 2016-04-26 | The Board Of Trustees Of The University Of Illinois | Adaptive resistive device and methods thereof |
US8642985B2 (en) | 2011-06-30 | 2014-02-04 | Industrial Technology Research Institute | Memory Cell |
US9178077B2 (en) * | 2012-11-13 | 2015-11-03 | Micron Technology, Inc. | Semiconductor constructions |
US20140262028A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure |
US9123640B2 (en) * | 2013-05-13 | 2015-09-01 | Seagate Technology Llc | Three dimensional resistive memory |
US9728584B2 (en) * | 2013-06-11 | 2017-08-08 | Micron Technology, Inc. | Three dimensional memory array with select device |
US9595669B2 (en) | 2015-06-30 | 2017-03-14 | Western Digital Technologies, Inc. | Electroplated phase change switch |
-
2015
- 2015-06-30 US US14/788,183 patent/US9595669B2/en active Active
-
2016
- 2016-06-24 GB GB201611062A patent/GB2540048B/en not_active Expired - Fee Related
- 2016-06-24 GB GB201709552A patent/GB2550701B/en not_active Expired - Fee Related
- 2016-06-29 JP JP2016129323A patent/JP6472773B2/en not_active Expired - Fee Related
- 2016-06-30 KR KR1020160082752A patent/KR101884063B1/en active IP Right Grant
- 2016-06-30 TW TW105120808A patent/TWI642177B/en not_active IP Right Cessation
- 2016-06-30 CN CN201610826808.4A patent/CN106848059B/en not_active Expired - Fee Related
- 2016-06-30 DE DE102016008075.2A patent/DE102016008075A1/en not_active Ceased
- 2016-06-30 FR FR1656147A patent/FR3038449A1/fr active Pending
- 2016-10-05 US US15/285,610 patent/US10270030B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294425B1 (en) * | 1999-10-14 | 2001-09-25 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors by electroplating electrodes from seed layers |
US20080175032A1 (en) * | 2007-01-23 | 2008-07-24 | Kabushiki Kaisha Toshiba | Semiconductor memory and method for manufacturing the same |
US20120161094A1 (en) * | 2010-12-22 | 2012-06-28 | Chinese Academy of Science, Institute of Microelectronics | 3d semiconductor memory device and manufacturing method thereof |
US20130248801A1 (en) * | 2012-03-21 | 2013-09-26 | Kazuhiko Yamamoto | Semiconductor memory device with resistance change film and method of manufacturing the same |
WO2014036480A1 (en) * | 2012-08-31 | 2014-03-06 | Micron Technology, Inc. | Three dimensional memory array architecture |
Also Published As
Publication number | Publication date |
---|---|
JP2017017321A (en) | 2017-01-19 |
CN106848059A (en) | 2017-06-13 |
GB2550701A (en) | 2017-11-29 |
GB201611062D0 (en) | 2016-08-10 |
US10270030B2 (en) | 2019-04-23 |
GB2540048B (en) | 2020-01-01 |
TW201714295A (en) | 2017-04-16 |
KR101884063B1 (en) | 2018-08-29 |
CN106848059B (en) | 2019-08-20 |
US9595669B2 (en) | 2017-03-14 |
US20170025476A1 (en) | 2017-01-26 |
GB201709552D0 (en) | 2017-08-02 |
TWI642177B (en) | 2018-11-21 |
DE102016008075A1 (en) | 2017-01-05 |
FR3038449A1 (en) | 2017-01-06 |
US20170005263A1 (en) | 2017-01-05 |
KR20170003483A (en) | 2017-01-09 |
GB2540048A (en) | 2017-01-04 |
JP6472773B2 (en) | 2019-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20200624 |