GB2418158A - InP single crystal, GaAs single crystal, and method for production thereof - Google Patents
InP single crystal, GaAs single crystal, and method for production thereof Download PDFInfo
- Publication number
- GB2418158A GB2418158A GB0600232A GB0600232A GB2418158A GB 2418158 A GB2418158 A GB 2418158A GB 0600232 A GB0600232 A GB 0600232A GB 0600232 A GB0600232 A GB 0600232A GB 2418158 A GB2418158 A GB 2418158A
- Authority
- GB
- United Kingdom
- Prior art keywords
- single crystal
- production
- inp
- grown
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 title description 2
- 239000002994 raw material Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method for the production of an InP single crystal includes gradually cooling a molten raw material held in contact with a seed crystal to solidify the molten raw material from a lower part toward an upper part of an interior of a crucible and grow a single crystal, causing the seed crystal to possess an average dislocation density of less than 10000/cm<2> and assume substantially identical cross-sectional shape and size with a cross-sectional shape and size of a single crystal to be grown, and allowing the InP single crystal to be grown to retain a non-doped state or a state doped with Fe or Sn.
Description
GB 2418158 A continuation (74) Agent and/or Address for Service: (56) cont
fJ Cleveland YASUMASA OKADA ET AL INSTITUTE OF 40-43 Chancery Lane, LONDON, PHYSICS:"Dislocation elemination in vertical gradient WC2A 1JQ, United Kingdom freeze grown gas single crystals" GALLIUM ARSENIDE AND RELATED COMPOUNDS, vol. SYMP. 17, 24 September 1990 (1990-09-241, p61-66, XP000146745 figure 1 ASAHI T ET AL: "VGF CRYSTAL GROWTH AND
VAPOR-PHASE FE DOPING TECHNOLOGIES FOR SEMI
INSULATING 100MM DIAMETER INO SUBSTRATES" 1999 11TH. INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS.
MAY, 1999, NEW YORK, vol. CONF. 11, 16TH May 1999, p 249-254, XP000931439, ISBN: 0-7803-5563-6 YASUMASA OKADA ET AL: "MECHANISM OF A
REDUCTION OF DISLOCATION DENSITIES IN
VERTICAL-GRADIENT-FREEZE-GROWN GAS SINGLE
CRYSTALS" JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 29, no. 11 PART 2, 1 NOV 1990, p L1954-L1956, XP000232823, ISSN: 0021-4922 ZEMKE D ET AL: "GROWTH OF INP BULK CRYSTALS BY VGF: A COMPARITIVE STUDY OF DISLOCATION DENSITY AND NUMERICAL STRESS ANALYSIS"
PROCEEDINGS OF THE EIGHTH INTERNATIONAL
CONFERENCE ON INDIUM PHOSPHIDE AND RELATED
MATERIALS, NEW YORK, vol. CONF. 8, 21 April 1996, p47-49, XP000634431, ISBN: 0-7803-3284-9
(58) Field of Search by ISA:
INT CL C30B Other: EPO-lnternal, PAJ
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003275987 | 2003-07-17 | ||
US48949403P | 2003-07-24 | 2003-07-24 | |
PCT/JP2004/010555 WO2005007939A1 (en) | 2003-07-17 | 2004-07-16 | InP SINGLE CRYSTAL, GaAs SINGLE CRYSTAL, AND METHOD FOR PRODUCTION THEREOF |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0600232D0 GB0600232D0 (en) | 2006-02-15 |
GB2418158A true GB2418158A (en) | 2006-03-22 |
GB2418158B GB2418158B (en) | 2007-05-30 |
Family
ID=34082363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0600232A Expired - Fee Related GB2418158B (en) | 2003-07-17 | 2004-07-16 | InP single crystal, GaAs single crystal, and method for production thereof |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2418158B (en) |
WO (1) | WO2005007939A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1739210B1 (en) | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Method for production of doped semiconductor single crystal, and III-V semiconductor single crystal |
US8329295B2 (en) | 2008-07-11 | 2012-12-11 | Freiberger Compound Materials Gmbh | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient |
EP2982783A4 (en) | 2013-03-26 | 2017-01-04 | JX Nippon Mining & Metals Corporation | Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals |
JP2023516634A (en) * | 2020-02-28 | 2023-04-20 | エイエックスティー,インコーポレーテッド | Indium phosphide with low etch pit density, low slip line density, and low strain |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0340987A (en) * | 1989-07-10 | 1991-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Growing method for single crystal |
EP0971052A1 (en) * | 1998-07-07 | 2000-01-12 | Mitsubishi Chemical Corporation | P-type GaAs single crystal and method for manufacturing the same |
EP0992618A1 (en) * | 1998-03-31 | 2000-04-12 | Japan Energy Corporation | Method of manufacturing compound semiconductor single crystal |
-
2004
- 2004-07-16 WO PCT/JP2004/010555 patent/WO2005007939A1/en active Application Filing
- 2004-07-16 GB GB0600232A patent/GB2418158B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0340987A (en) * | 1989-07-10 | 1991-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Growing method for single crystal |
EP0992618A1 (en) * | 1998-03-31 | 2000-04-12 | Japan Energy Corporation | Method of manufacturing compound semiconductor single crystal |
EP0971052A1 (en) * | 1998-07-07 | 2000-01-12 | Mitsubishi Chemical Corporation | P-type GaAs single crystal and method for manufacturing the same |
Non-Patent Citations (6)
Title |
---|
ASAHI T ET AL: "VGF CRYSTAL GROWTH AND VAPOR-PHASE FE DOPING TECHNOLOGIES FOR SEMI INSULATING 100MM DIAMETER INO SUBSTRATES" 1999 11TH. INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. MAY, 1999, NEW YORK, vol. CONF. 11, 16TH May 1999, p 249-254, XP000931439, ISBN: 0-7803-5563-6 * |
GAULT: "A novel application of the vertical gradient freeze method to the growth of high quality crystals" JOURNAL OF CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 74, no. 3, 1986, p 491-506, XP002121188 ISSN: 022-0248 abstract * |
YABUHARA Y ET AL: "High quality InP substrate growth by VCZ method" INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, IPRM '96., EIGHTH INTERNATIONAL CONFERENCE ON SHWABISCH-GMUND, GERMANY 21-25 APRIL 1996, NEW YORK, NY, USA, IEEE, US, 21 APRIL 1996 (1996-04-21), p 35-38, XP010157617, ISBN: 0-7803-3283 * |
YASUMASA OKADA ET AL INSTITUTE OF PHYSICS:"Dislocation elemination in vertical gradient freeze grown gas single crystals" GALLIUM ARSENIDE AND RELATED COMPOUNDS, vol. SYMP. 17, 24 September 1990 (1990-09-24), p61-66, XP000146745 figure 1 * |
YASUMASA OKADA ET AL: "MECHANISM OF A REDUCTION OF DISLOCATION DENSITIES IN VERTICAL-GRADIENT-FREEZE-GROWN GAS SINGLE CRYSTALS" JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 29, no. 11 PART 2, 1 NOV 1990, p L1954-L1956, XP000232823, ISSN: 0021-4922 * |
ZEMKE D ET AL: "GROWTH OF INP BULK CRYSTALS BY VGF: A COMPARITIVE STUDY OF DISLOCATION DENSITY AND NUMERICAL STRESS ANALYSIS" PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, NEW YORK, vol. CONF. 8, 21 April 1996, p47-49, XP000634431, ISBN: 0-7803-3284-9 * |
Also Published As
Publication number | Publication date |
---|---|
GB0600232D0 (en) | 2006-02-15 |
WO2005007939A1 (en) | 2005-01-27 |
GB2418158B (en) | 2007-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20080716 |