GB0600232D0 - InP single crystal, GaAs single crystal, and method for production thereof - Google Patents

InP single crystal, GaAs single crystal, and method for production thereof

Info

Publication number
GB0600232D0
GB0600232D0 GBGB0600232.3A GB0600232A GB0600232D0 GB 0600232 D0 GB0600232 D0 GB 0600232D0 GB 0600232 A GB0600232 A GB 0600232A GB 0600232 D0 GB0600232 D0 GB 0600232D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
production
inp
gaas
gaas single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0600232.3A
Other versions
GB2418158A (en
GB2418158B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of GB0600232D0 publication Critical patent/GB0600232D0/en
Publication of GB2418158A publication Critical patent/GB2418158A/en
Application granted granted Critical
Publication of GB2418158B publication Critical patent/GB2418158B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB0600232A 2003-07-17 2004-07-16 InP single crystal, GaAs single crystal, and method for production thereof Expired - Fee Related GB2418158B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003275987 2003-07-17
US48949403P 2003-07-24 2003-07-24
PCT/JP2004/010555 WO2005007939A1 (en) 2003-07-17 2004-07-16 InP SINGLE CRYSTAL, GaAs SINGLE CRYSTAL, AND METHOD FOR PRODUCTION THEREOF

Publications (3)

Publication Number Publication Date
GB0600232D0 true GB0600232D0 (en) 2006-02-15
GB2418158A GB2418158A (en) 2006-03-22
GB2418158B GB2418158B (en) 2007-05-30

Family

ID=34082363

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0600232A Expired - Fee Related GB2418158B (en) 2003-07-17 2004-07-16 InP single crystal, GaAs single crystal, and method for production thereof

Country Status (2)

Country Link
GB (1) GB2418158B (en)
WO (1) WO2005007939A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739210B1 (en) * 2005-07-01 2012-03-07 Freiberger Compound Materials GmbH Method for production of doped semiconductor single crystal, and III-V semiconductor single crystal
US8329295B2 (en) 2008-07-11 2012-12-11 Freiberger Compound Materials Gmbh Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
EP3828319A1 (en) 2013-03-26 2021-06-02 JX Nippon Mining & Metals Corp. Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals
EP4110975A4 (en) * 2020-02-28 2024-02-28 Axt, Inc. Low etch pit density, low slip line density, and low strain indium phosphide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (en) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> Growing method for single crystal
EP0992618B1 (en) * 1998-03-31 2007-01-03 Nippon Mining & Metals Co., Ltd. Method of manufacturing compound semiconductor single crystal
EP0971052B1 (en) * 1998-07-07 2004-02-04 Mitsubishi Chemical Corporation P-type GaAs single crystal and method for manufacturing the same

Also Published As

Publication number Publication date
WO2005007939A1 (en) 2005-01-27
GB2418158A (en) 2006-03-22
GB2418158B (en) 2007-05-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080716