Classifications

• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
  • E04F13/00—Coverings or linings, e.g. for walls or ceilings
  • E04F13/07—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor
  • E04F13/08—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor composed of a plurality of similar covering or lining elements
  • E04F13/0871—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor composed of a plurality of similar covering or lining elements having an ornamental or specially shaped visible surface
  • E04F13/0873—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor composed of a plurality of similar covering or lining elements having an ornamental or specially shaped visible surface the visible surface imitating natural stone, brick work, tiled surface or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
  • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
  • E04F13/00—Coverings or linings, e.g. for walls or ceilings
  • E04F13/002—Coverings or linings, e.g. for walls or ceilings made of webs, e.g. of fabrics, or wallpaper, used as coverings or linings
  • E04F13/005—Stretched foil- or web-like elements attached with edge gripping devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
  • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
  • E04F2201/00—Joining sheets or plates or panels
  • E04F2201/07—Joining sheets or plates or panels with connections using a special adhesive material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
  • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/48—Data lines or contacts therefor
  • H10B12/482—Bit lines
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P80/00—Climate change mitigation technologies for sector-wide applications
  • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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• Engineering & Computer Science (AREA)
• Architecture (AREA)
• Structural Engineering (AREA)
• Civil Engineering (AREA)
• Manufacturing & Machinery (AREA)
• General Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Semiconductor Memories (AREA)
• Electrodes Of Semiconductors (AREA)

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Publications (3)

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Family Applications (1)

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Cited By (1)

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Citations (4)

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• 2003
  • 2003-03-31 KR KR10-2003-0019873A patent/KR100499161B1/en active IP Right Grant
  • 2003-05-23 TW TW092113946A patent/TWI262574B/en not_active IP Right Cessation
  • 2003-07-03 JP JP2003270765A patent/JP5107499B2/en not_active Expired - Fee Related
  • 2003-07-21 CN CNB031328059A patent/CN100358089C/en not_active Expired - Lifetime
  • 2003-10-13 DE DE10347458A patent/DE10347458B4/en not_active Expired - Lifetime
  • 2003-11-28 GB GB0327715A patent/GB2400237B/en not_active Expired - Lifetime

Patent Citations (4)

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