GB2396743B - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- GB2396743B GB2396743B GB0408229A GB0408229A GB2396743B GB 2396743 B GB2396743 B GB 2396743B GB 0408229 A GB0408229 A GB 0408229A GB 0408229 A GB0408229 A GB 0408229A GB 2396743 B GB2396743 B GB 2396743B
- Authority
- GB
- United Kingdom
- Prior art keywords
- thin film
- film transistor
- transistor
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6276799 | 1999-03-10 | ||
JP8005199 | 1999-03-24 | ||
JP8331999 | 1999-03-26 | ||
JP8331699 | 1999-03-26 | ||
JP8331499 | 1999-03-26 | ||
GB0027543A GB2354882B (en) | 1999-03-10 | 2000-03-09 | Thin film transistor panel and their manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0408229D0 GB0408229D0 (en) | 2004-05-19 |
GB2396743A GB2396743A (en) | 2004-06-30 |
GB2396743B true GB2396743B (en) | 2004-08-18 |
Family
ID=31950912
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0330021A Expired - Fee Related GB2393574B (en) | 1999-03-10 | 2000-03-09 | Method of manufacturing a thin film transistor |
GB0408229A Expired - Fee Related GB2396743B (en) | 1999-03-10 | 2000-03-09 | Thin film transistor |
GB0408368A Expired - Fee Related GB2396744B (en) | 1999-03-10 | 2000-03-09 | A semiconductor element |
GB0330024A Expired - Fee Related GB2393576B (en) | 1999-03-10 | 2000-03-09 | LCD substrate |
GB0330022A Expired - Fee Related GB2393575B (en) | 1999-03-10 | 2000-03-09 | Method of manufacturing a thin film transistor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0330021A Expired - Fee Related GB2393574B (en) | 1999-03-10 | 2000-03-09 | Method of manufacturing a thin film transistor |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0408368A Expired - Fee Related GB2396744B (en) | 1999-03-10 | 2000-03-09 | A semiconductor element |
GB0330024A Expired - Fee Related GB2393576B (en) | 1999-03-10 | 2000-03-09 | LCD substrate |
GB0330022A Expired - Fee Related GB2393575B (en) | 1999-03-10 | 2000-03-09 | Method of manufacturing a thin film transistor |
Country Status (1)
Country | Link |
---|---|
GB (5) | GB2393574B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11121263B2 (en) * | 2019-08-27 | 2021-09-14 | Apple Inc. | Hydrogen trap layer for display device and the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07202210A (en) * | 1993-12-28 | 1995-08-04 | Sharp Corp | Thin film transistor and manufacture thereof |
JPH0992840A (en) * | 1995-09-28 | 1997-04-04 | Nec Corp | Liquid crystal display device and its manufacture |
WO1998027583A1 (en) * | 1996-12-19 | 1998-06-25 | Koninklijke Philips Electronics N.V. | Electronic devices and their manufacture |
US5807770A (en) * | 1995-03-13 | 1998-09-15 | Nec Corporation | Fabrication method of semiconductor device containing semiconductor active film |
EP1001467A2 (en) * | 1998-11-09 | 2000-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
EP1003223A2 (en) * | 1998-11-17 | 2000-05-24 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6197864A (en) * | 1984-10-18 | 1986-05-16 | Asahi Glass Co Ltd | Thin film transistor |
JP2503656B2 (en) * | 1989-05-31 | 1996-06-05 | 日本電気株式会社 | Thin film field effect transistor and method of manufacturing the same |
JP3214091B2 (en) * | 1992-09-18 | 2001-10-02 | 松下電器産業株式会社 | Method for manufacturing thin film transistor |
JPH07321329A (en) * | 1994-05-27 | 1995-12-08 | Matsushita Electric Ind Co Ltd | Method for manufacturing thin film transistor and liquid display unit |
JPH08335687A (en) * | 1995-06-07 | 1996-12-17 | Fuji Xerox Co Ltd | Manufacture of thin film photoelectric conversion device |
JPH0974206A (en) * | 1995-09-04 | 1997-03-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPH10223907A (en) * | 1997-02-07 | 1998-08-21 | Toshiba Corp | Thin-film transistor and lcd display device, and manufacture of the same |
US6037195A (en) * | 1997-09-25 | 2000-03-14 | Kabushiki Kaisha Toshiba | Process of producing thin film transistor |
EP1017108B1 (en) * | 1998-12-25 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
-
2000
- 2000-03-09 GB GB0330021A patent/GB2393574B/en not_active Expired - Fee Related
- 2000-03-09 GB GB0408229A patent/GB2396743B/en not_active Expired - Fee Related
- 2000-03-09 GB GB0408368A patent/GB2396744B/en not_active Expired - Fee Related
- 2000-03-09 GB GB0330024A patent/GB2393576B/en not_active Expired - Fee Related
- 2000-03-09 GB GB0330022A patent/GB2393575B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07202210A (en) * | 1993-12-28 | 1995-08-04 | Sharp Corp | Thin film transistor and manufacture thereof |
US5807770A (en) * | 1995-03-13 | 1998-09-15 | Nec Corporation | Fabrication method of semiconductor device containing semiconductor active film |
JPH0992840A (en) * | 1995-09-28 | 1997-04-04 | Nec Corp | Liquid crystal display device and its manufacture |
WO1998027583A1 (en) * | 1996-12-19 | 1998-06-25 | Koninklijke Philips Electronics N.V. | Electronic devices and their manufacture |
EP1001467A2 (en) * | 1998-11-09 | 2000-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
EP1003223A2 (en) * | 1998-11-17 | 2000-05-24 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
Also Published As
Publication number | Publication date |
---|---|
GB2396743A (en) | 2004-06-30 |
GB2393575A (en) | 2004-03-31 |
GB2393574B (en) | 2004-06-02 |
GB2393574A (en) | 2004-03-31 |
GB0408368D0 (en) | 2004-05-19 |
GB2396744A (en) | 2004-06-30 |
GB0330024D0 (en) | 2004-01-28 |
GB2393575B (en) | 2004-06-02 |
GB0330022D0 (en) | 2004-01-28 |
GB2396744B (en) | 2004-08-18 |
GB0330021D0 (en) | 2004-01-28 |
GB0408229D0 (en) | 2004-05-19 |
GB2393576B (en) | 2004-05-19 |
GB2393576A (en) | 2004-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20080309 |