GB2352084B - Forming contacts on semiconductor substrates for radiation detectors and imaging devices - Google Patents

Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Info

Publication number
GB2352084B
GB2352084B GB9916404A GB9916404A GB2352084B GB 2352084 B GB2352084 B GB 2352084B GB 9916404 A GB9916404 A GB 9916404A GB 9916404 A GB9916404 A GB 9916404A GB 2352084 B GB2352084 B GB 2352084B
Authority
GB
United Kingdom
Prior art keywords
imaging devices
semiconductor substrates
radiation detectors
forming contacts
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9916404A
Other languages
English (en)
Other versions
GB9916404D0 (en
GB2352084A (en
Inventor
Konstantinos Evange Spartiotis
Hannele Heikkinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Simage Oy
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Priority to GB9916404A priority Critical patent/GB2352084B/en
Priority to US09/362,195 priority patent/US6410922B1/en
Publication of GB9916404D0 publication Critical patent/GB9916404D0/en
Priority to PCT/EP2000/006014 priority patent/WO2001004962A2/fr
Priority to AU66886/00A priority patent/AU6688600A/en
Publication of GB2352084A publication Critical patent/GB2352084A/en
Priority to US10/176,637 priority patent/US20020158207A1/en
Application granted granted Critical
Publication of GB2352084B publication Critical patent/GB2352084B/en
Priority to US10/393,767 priority patent/US20030183770A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
GB9916404A 1995-11-29 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices Expired - Fee Related GB2352084B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9916404A GB2352084B (en) 1999-07-13 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US09/362,195 US6410922B1 (en) 1995-11-29 1999-07-28 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
PCT/EP2000/006014 WO2001004962A2 (fr) 1999-07-13 2000-06-28 Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie
AU66886/00A AU6688600A (en) 1999-07-13 2000-06-28 Forming contacts on semiconductor substrates for radiation detectors and imagingdevices
US10/176,637 US20020158207A1 (en) 1996-11-26 2002-06-24 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US10/393,767 US20030183770A1 (en) 1996-11-26 2003-03-19 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9916404A GB2352084B (en) 1999-07-13 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (3)

Publication Number Publication Date
GB9916404D0 GB9916404D0 (en) 1999-09-15
GB2352084A GB2352084A (en) 2001-01-17
GB2352084B true GB2352084B (en) 2002-11-13

Family

ID=10857160

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9916404A Expired - Fee Related GB2352084B (en) 1995-11-29 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Country Status (3)

Country Link
AU (1) AU6688600A (fr)
GB (1) GB2352084B (fr)
WO (1) WO2001004962A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2982709B1 (fr) 2014-08-07 2017-06-28 Telene SAS Composition durcissable et article moulé comprenant la composition

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027556A (en) * 1978-07-31 1980-02-20 Philips Electronic Associated Manufacturing infra-red detectors
EP0182977A1 (fr) * 1984-10-29 1986-06-04 International Business Machines Corporation Procédé de fabrication d'appuis pour des couches de métallisation interconnectées à différents niveaux d'une puce semi-conductrice
EP0200082A2 (fr) * 1985-04-30 1986-11-05 International Business Machines Corporation Procédé de décollage sans couche de barrière à haute température pour la formation d'une couche d'interconnection configurée
EP0278408A2 (fr) * 1987-02-06 1988-08-17 Siemens Aktiengesellschaft Combinaison monolithique intégrée d'un guide d'ondes et d'une photodiode
GB2205684A (en) * 1987-05-08 1988-12-14 Mitsubishi Electric Corp Lift-off method of fabricating electrodes for semiconductor devices
JPH0832101A (ja) * 1994-07-15 1996-02-02 Toshiba Corp ＨｇＣｄＴｅ半導体装置およびその製造方法
GB2307785A (en) * 1995-11-29 1997-06-04 Simage Oy Forming contacts on semiconductor substrates radiation detectors and imaging devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232978A (ja) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd 半導体放射線検出器及びその製造方法
EP0415541B1 (fr) * 1989-07-29 1994-10-05 Shimadzu Corporation Détecteur d'image radiative à base de semi-conducteur et sa méthode de fabrication
JPH08321486A (ja) * 1995-05-24 1996-12-03 Sony Corp 金属膜のパターン形成方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027556A (en) * 1978-07-31 1980-02-20 Philips Electronic Associated Manufacturing infra-red detectors
EP0182977A1 (fr) * 1984-10-29 1986-06-04 International Business Machines Corporation Procédé de fabrication d'appuis pour des couches de métallisation interconnectées à différents niveaux d'une puce semi-conductrice
EP0200082A2 (fr) * 1985-04-30 1986-11-05 International Business Machines Corporation Procédé de décollage sans couche de barrière à haute température pour la formation d'une couche d'interconnection configurée
EP0278408A2 (fr) * 1987-02-06 1988-08-17 Siemens Aktiengesellschaft Combinaison monolithique intégrée d'un guide d'ondes et d'une photodiode
GB2205684A (en) * 1987-05-08 1988-12-14 Mitsubishi Electric Corp Lift-off method of fabricating electrodes for semiconductor devices
JPH0832101A (ja) * 1994-07-15 1996-02-02 Toshiba Corp ＨｇＣｄＴｅ半導体装置およびその製造方法
GB2307785A (en) * 1995-11-29 1997-06-04 Simage Oy Forming contacts on semiconductor substrates radiation detectors and imaging devices

Also Published As

Publication number Publication date
AU6688600A (en) 2001-01-30
GB9916404D0 (en) 1999-09-15
WO2001004962A2 (fr) 2001-01-18
GB2352084A (en) 2001-01-17
WO2001004962A3 (fr) 2001-06-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030713