GB9916404D0 - Forming contacts on semiconductor substrates for radiation detectors and imaging devices - Google Patents
Forming contacts on semiconductor substrates for radiation detectors and imaging devicesInfo
- Publication number
- GB9916404D0 GB9916404D0 GBGB9916404.8A GB9916404A GB9916404D0 GB 9916404 D0 GB9916404 D0 GB 9916404D0 GB 9916404 A GB9916404 A GB 9916404A GB 9916404 D0 GB9916404 D0 GB 9916404D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- imaging devices
- semiconductor substrates
- radiation detectors
- forming contacts
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916404A GB2352084B (en) | 1999-07-13 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US09/362,195 US6410922B1 (en) | 1995-11-29 | 1999-07-28 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
PCT/EP2000/006014 WO2001004962A2 (en) | 1999-07-13 | 2000-06-28 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
AU66886/00A AU6688600A (en) | 1999-07-13 | 2000-06-28 | Forming contacts on semiconductor substrates for radiation detectors and imagingdevices |
US10/176,637 US20020158207A1 (en) | 1996-11-26 | 2002-06-24 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US10/393,767 US20030183770A1 (en) | 1996-11-26 | 2003-03-19 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916404A GB2352084B (en) | 1999-07-13 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9916404D0 true GB9916404D0 (en) | 1999-09-15 |
GB2352084A GB2352084A (en) | 2001-01-17 |
GB2352084B GB2352084B (en) | 2002-11-13 |
Family
ID=10857160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9916404A Expired - Fee Related GB2352084B (en) | 1995-11-29 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU6688600A (en) |
GB (1) | GB2352084B (en) |
WO (1) | WO2001004962A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL2982709T3 (en) | 2014-08-07 | 2017-12-29 | Telene Sas | Curable composition and molded article comprising the composition |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2027556B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Manufacturing infra-red detectors |
US4541169A (en) * | 1984-10-29 | 1985-09-17 | International Business Machines Corporation | Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
DE3876109D1 (en) * | 1987-02-06 | 1993-01-07 | Siemens Ag | MONOLITHICALLY INTEGRATED WAVE WIRE PHOTODIODE COMBINATION. |
JPS63276230A (en) * | 1987-05-08 | 1988-11-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH02232978A (en) * | 1989-03-07 | 1990-09-14 | Matsushita Electric Ind Co Ltd | Semiconductor radiation detector and manufacture thereof |
EP0415541B1 (en) * | 1989-07-29 | 1994-10-05 | Shimadzu Corporation | Semiconductor-based radiation image detector and its manufacturing method |
JPH0832101A (en) * | 1994-07-15 | 1996-02-02 | Toshiba Corp | Hgcdte semiconductor device and its manufacture |
JPH08321486A (en) * | 1995-05-24 | 1996-12-03 | Sony Corp | Pattern forming method of metal film |
GB2307785B (en) * | 1995-11-29 | 1998-04-29 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
-
1999
- 1999-07-13 GB GB9916404A patent/GB2352084B/en not_active Expired - Fee Related
-
2000
- 2000-06-28 AU AU66886/00A patent/AU6688600A/en not_active Abandoned
- 2000-06-28 WO PCT/EP2000/006014 patent/WO2001004962A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2001004962A2 (en) | 2001-01-18 |
GB2352084A (en) | 2001-01-17 |
GB2352084B (en) | 2002-11-13 |
WO2001004962A3 (en) | 2001-06-28 |
AU6688600A (en) | 2001-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20030713 |