WO2001004962A3 - Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie - Google Patents

Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie Download PDF

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Publication number
WO2001004962A3
WO2001004962A3 PCT/EP2000/006014 EP0006014W WO0104962A3 WO 2001004962 A3 WO2001004962 A3 WO 2001004962A3 EP 0006014 W EP0006014 W EP 0006014W WO 0104962 A3 WO0104962 A3 WO 0104962A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
forming
imaging devices
semiconductor substrates
Prior art date
Application number
PCT/EP2000/006014
Other languages
English (en)
Other versions
WO2001004962A2 (fr
Inventor
Konstantinos Evange Spartiotis
Hannele Heikkinen
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Priority to AU66886/00A priority Critical patent/AU6688600A/en
Publication of WO2001004962A2 publication Critical patent/WO2001004962A2/fr
Publication of WO2001004962A3 publication Critical patent/WO2001004962A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un procédé convenant à la formation de contacts métalliques (31) sur un substrat à semiconducteur (1) en certains points pour la définition de cellules de détecteur de radiations. Ledit procédé consiste à: former une ou plusieurs couches de matériau (11, 12) sur une surface du substrat, des ouvertures (23) étant ménagées sur ladite surface au niveau des points de contact; former une couche de métal (24) sur la/les couches de matériau et les ouvertures; et enlever le métal en 28 recouvrant la/les couches de matériau, de sorte que les contacts soient séparés. Eventuellement, une couche de passivation (11) à laisser entre les contacts séparés sur la surface du substrat, peut être appliquée au cours du procédé. Le procédé de l'invention empêche les agents d'attaque chimique utilisés pour enlever l'or indésirable (ou une autre matière de contact) de venir en contact avec la surface du substrat (ex. CdZn) et d'induire la dégradation des propriétés résistives dudit substrat. Le produit fabriqué par le procédé et des utilisations de celui-ci sont décrits.
PCT/EP2000/006014 1999-07-13 2000-06-28 Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie WO2001004962A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU66886/00A AU6688600A (en) 1999-07-13 2000-06-28 Forming contacts on semiconductor substrates for radiation detectors and imagingdevices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9916404.8 1999-07-13
GB9916404A GB2352084B (en) 1999-07-13 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (2)

Publication Number Publication Date
WO2001004962A2 WO2001004962A2 (fr) 2001-01-18
WO2001004962A3 true WO2001004962A3 (fr) 2001-06-28

Family

ID=10857160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/006014 WO2001004962A2 (fr) 1999-07-13 2000-06-28 Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie

Country Status (3)

Country Link
AU (1) AU6688600A (fr)
GB (1) GB2352084B (fr)
WO (1) WO2001004962A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2982709B1 (fr) 2014-08-07 2017-06-28 Telene SAS Composition durcissable et article moulé comprenant la composition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232978A (ja) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd 半導体放射線検出器及びその製造方法
EP0415541A1 (fr) * 1989-07-29 1991-03-06 Shimadzu Corporation Détecteur d'image radiative à base de semi-conducteur et sa méthode de fabrication
JPH0832101A (ja) * 1994-07-15 1996-02-02 Toshiba Corp ＨｇＣｄＴｅ半導体装置およびその製造方法
WO1997020342A1 (fr) * 1995-11-29 1997-06-05 Simage Oy Formation de contacts sur des substrats semi-conducteurs destines a des detecteurs de rayonnement et a des dispositifs d'imagerie
US5888892A (en) * 1995-05-24 1999-03-30 Sony Corporation Metal layer pattern forming method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process
DE3876109D1 (de) * 1987-02-06 1993-01-07 Siemens Ag Monolithisch integrierte wellenleiter-fotodiodenkombination.
JPS63276230A (ja) * 1987-05-08 1988-11-14 Mitsubishi Electric Corp 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232978A (ja) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd 半導体放射線検出器及びその製造方法
EP0415541A1 (fr) * 1989-07-29 1991-03-06 Shimadzu Corporation Détecteur d'image radiative à base de semi-conducteur et sa méthode de fabrication
JPH0832101A (ja) * 1994-07-15 1996-02-02 Toshiba Corp ＨｇＣｄＴｅ半導体装置およびその製造方法
US5888892A (en) * 1995-05-24 1999-03-30 Sony Corporation Metal layer pattern forming method
WO1997020342A1 (fr) * 1995-11-29 1997-06-05 Simage Oy Formation de contacts sur des substrats semi-conducteurs destines a des detecteurs de rayonnement et a des dispositifs d'imagerie

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 546 (E - 1008) 4 December 1990 (1990-12-04) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 06 28 June 1996 (1996-06-28) *

Also Published As

Publication number Publication date
GB2352084A (en) 2001-01-17
GB2352084B (en) 2002-11-13
GB9916404D0 (en) 1999-09-15
WO2001004962A2 (fr) 2001-01-18
AU6688600A (en) 2001-01-30

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