GB2320809A8 - Forming a protective film in a semiconductor device - Google Patents

Forming a protective film in a semiconductor device

Info

Publication number
GB2320809A8
GB2320809A8 GB9727080A GB9727080A GB2320809A8 GB 2320809 A8 GB2320809 A8 GB 2320809A8 GB 9727080 A GB9727080 A GB 9727080A GB 9727080 A GB9727080 A GB 9727080A GB 2320809 A8 GB2320809 A8 GB 2320809A8
Authority
GB
United Kingdom
Prior art keywords
forming
semiconductor device
protective film
protective
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9727080A
Other versions
GB9727080D0 (en
GB2320809B (en
GB2320809A (en
Inventor
Sun Oo Kim
Min Jae Kim
Dong Sunsheen
Yong Sun Sohn
Chung Tae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9727080D0 publication Critical patent/GB9727080D0/en
Publication of GB2320809A publication Critical patent/GB2320809A/en
Publication of GB2320809A8 publication Critical patent/GB2320809A8/en
Application granted granted Critical
Publication of GB2320809B publication Critical patent/GB2320809B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
GB9727080A 1996-12-28 1997-12-23 Method of forming a protective film in a semiconductor device Expired - Fee Related GB2320809B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960074957A KR19980055721A (en) 1996-12-28 1996-12-28 Method of forming protective film of semiconductor device

Publications (4)

Publication Number Publication Date
GB9727080D0 GB9727080D0 (en) 1998-02-18
GB2320809A GB2320809A (en) 1998-07-01
GB2320809A8 true GB2320809A8 (en) 1998-08-04
GB2320809B GB2320809B (en) 2001-09-12

Family

ID=19491706

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9727080A Expired - Fee Related GB2320809B (en) 1996-12-28 1997-12-23 Method of forming a protective film in a semiconductor device

Country Status (5)

Country Link
JP (1) JPH10199877A (en)
KR (1) KR19980055721A (en)
CN (1) CN1113398C (en)
DE (1) DE19757879A1 (en)
GB (1) GB2320809B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2358733A (en) * 1999-08-30 2001-08-01 Lucent Technologies Inc Integrated circuit with multi-layer dielectric having reduced capacitance
GB2358734A (en) * 1999-08-30 2001-08-01 Lucent Technologies Inc Process for fabricating integrated circuit with multi-layer dielectric having reduced capacitance
CN100444331C (en) * 2003-11-11 2008-12-17 三星电子株式会社 Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
WO2005122227A1 (en) 2004-06-08 2005-12-22 Koninklijke Philips Electronics, N.V. Reduction of cracking in low-k spin-on-dielectric films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501872B1 (en) * 1970-01-30 1975-01-22
US4091407A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
WO1987002828A1 (en) * 1985-11-04 1987-05-07 Motorola, Inc. Glass intermetal dielectric
US5057897A (en) * 1990-03-05 1991-10-15 Vlsi Technology, Inc. Charge neutralization using silicon-enriched oxide layer
US5374833A (en) * 1990-03-05 1994-12-20 Vlsi Technology, Inc. Structure for suppression of field inversion caused by charge build-up in the dielectric
KR970052338A (en) * 1995-12-23 1997-07-29 김주용 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
CN1187027A (en) 1998-07-08
KR19980055721A (en) 1998-09-25
GB9727080D0 (en) 1998-02-18
DE19757879A1 (en) 1998-07-02
GB2320809B (en) 2001-09-12
CN1113398C (en) 2003-07-02
GB2320809A (en) 1998-07-01
JPH10199877A (en) 1998-07-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091223