GB2312095B - Semiconductor devices having a field oxide layer - Google Patents

Semiconductor devices having a field oxide layer

Info

Publication number
GB2312095B
GB2312095B GB9710128A GB9710128A GB2312095B GB 2312095 B GB2312095 B GB 2312095B GB 9710128 A GB9710128 A GB 9710128A GB 9710128 A GB9710128 A GB 9710128A GB 2312095 B GB2312095 B GB 2312095B
Authority
GB
United Kingdom
Prior art keywords
oxide layer
semiconductor devices
field oxide
field
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9710128A
Other versions
GB9710128D0 (en
GB2312095A (en
Inventor
Byung-Ryul Ryum
Tae-Hyeon Han
Soo-Min Lee
Keok-Ho Cho
Jin-Young Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
KT Corp
Original Assignee
Electronics and Telecommunications Research Institute ETRI
KT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019940030900A external-priority patent/KR0148602B1/en
Application filed by Electronics and Telecommunications Research Institute ETRI, KT Corp filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of GB9710128D0 publication Critical patent/GB9710128D0/en
Publication of GB2312095A publication Critical patent/GB2312095A/en
Application granted granted Critical
Publication of GB2312095B publication Critical patent/GB2312095B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
GB9710128A 1994-11-23 1994-12-14 Semiconductor devices having a field oxide layer Expired - Fee Related GB2312095B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940030900A KR0148602B1 (en) 1994-11-23 1994-11-23 Elements isolation method for semiconductor devices
GB9425223A GB2295487B (en) 1994-11-23 1994-12-14 Semiconductor devices having a field oxide layer

Publications (3)

Publication Number Publication Date
GB9710128D0 GB9710128D0 (en) 1997-07-09
GB2312095A GB2312095A (en) 1997-10-15
GB2312095B true GB2312095B (en) 1997-12-17

Family

ID=26306170

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9710128A Expired - Fee Related GB2312095B (en) 1994-11-23 1994-12-14 Semiconductor devices having a field oxide layer

Country Status (1)

Country Link
GB (1) GB2312095B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2306050A (en) * 1995-10-05 1997-04-23 Nec Corp Planarizing filled trench isolation semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2306050A (en) * 1995-10-05 1997-04-23 Nec Corp Planarizing filled trench isolation semiconductor devices

Also Published As

Publication number Publication date
GB9710128D0 (en) 1997-07-09
GB2312095A (en) 1997-10-15

Similar Documents

Publication Publication Date Title
EP0690486A3 (en) Semiconductor device fabrication
EP0702414A3 (en) Semiconductor light-emitting devices
GB2295488B (en) Semiconductor device
GB2292010B (en) Semiconductor device
EP0704897A3 (en) Semiconductor device
GB2275822B (en) Semiconductor devices
EP0720295A3 (en) Semiconductor device
GB9423423D0 (en) Semiconductor device
GB2292637B (en) Semiconductor device
GB2295272B (en) Semiconductor device
GB2278234B (en) Fabricating semiconductor devices
GB2314970B (en) Semiconductor device having a t-shaped field oxide layer and a method for fabricating the same
GB2296374B (en) Fabricating semiconductor devices
GB2295487B (en) Semiconductor devices having a field oxide layer
GB2296373B (en) Semiconductor device
EP0716445A3 (en) Semiconductor device
GB2295051B (en) Semiconductor device
GB9402639D0 (en) Semiconductor device
GB2312095B (en) Semiconductor devices having a field oxide layer
GB9401357D0 (en) Semiconductor junctions
GB2286719B (en) Semiconductor device
GB9413568D0 (en) Semiconductor devices
GB2285882B (en) Semiconductor switching devices
GB9703514D0 (en) Semiconductor devices
GB9420955D0 (en) Semiconductor devices

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20131214