GB2288907A - Combined light emitting diode and photodiode - Google Patents
Combined light emitting diode and photodiode Download PDFInfo
- Publication number
- GB2288907A GB2288907A GB9408340A GB9408340A GB2288907A GB 2288907 A GB2288907 A GB 2288907A GB 9408340 A GB9408340 A GB 9408340A GB 9408340 A GB9408340 A GB 9408340A GB 2288907 A GB2288907 A GB 2288907A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pled
- light emitting
- emitting diode
- photo
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000013307 optical fiber Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001883 metal evaporation Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 230000005236 sound signal Effects 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 2
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 abstract description 37
- 230000009977 dual effect Effects 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/114—Indoor or close-range type systems
- H04B10/1143—Bidirectional transmission
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
- Led Device Packages (AREA)
Abstract
A Light emitting diode (LED) and photodiode (PD) are formed in a single-semiconductor chip (as a PLED) for use in a wireless optical A/V (audio and video) communication system. The LED is made rectangular and double in size compared with a conventional LED and half of its area is made for the light detecting purpose by changing the method of manufacturing. The PLED emits infrared and also detects infrared. An optical arrangement is provided for simultaneously modulated optical signals to be transmitted and received to and from air or optical fibers. Therefore the PLED is combined with a dual or multiple light path which is characterized in that at least one reflective layer RL within a lens forms an entry or end portion for a beam waveguide and said layer forming an angle with the optical axis of the lens. <IMAGE>
Description
Photo Light Emitting Diode
The invention relates to an arrangement and methods for manufacturing and using a photo light emitting diode, which may be used for simultaneously transmission/receiving of modulated optical signal and also may be used for simultaneously transmission/receiving of modulated optical signal into/from air or optical fibers.
Background
Light emitting diode, in the following called LED, is well known. The LEDs have made in such a way that it should have a maximum emission efficiency of light. Photo diode, in the following called PD, is also well known and made in such a way that it have a maximum sensitivity for light.
However for a wireless optical A/V (audio and video) communication system it is desirable to have only one optical element which makes it possible simultaneously modulated optical signals to transmit and to receive and furthermore it is desirable simultaneously modulated optical signals to transmit and to receive into and from air or optical fibers.
Invention
It is one aspect of the invention to provide a photo light emitting diode, in the following called PLED, which may be used for simultaneously transmission/receiving of modulated optical signal and may be manufactured as one unit on the same chip and it is an second aspect of the invention to provide an optical arrangement, which makes it possible simultaneously modulated optical signals to transmit and to receive into and from air or optical fibers.
This problems are solved as described in the claims 1,5 and 6.
More details are stated in subclaims.
In principle the photo light emitting diode or PLED is made as an one chip photo sensitive LED. Basically an LED chip for example made rectangular and double in size comparing with a conventional LED is used and half of its area is made for the light detecting purpose by changing the method of manufacturing. The LED chip is made based on its conventional process which is using GaAs substrate but the process respecting to photo diode is changed so that the P+ layer, which is assisting to increase the current density for light emission is not made and then only the P-N junction area which gives a photo current is enlarged.
Due to the construction and material, the PD part may emit infrared ray but the amount will be much less than that from
LED area and it will not deteriorate the PD function although it may compensate decrease of light emission level toward the
PD side.
The PLED emits infrared ray and also detects infrared ray.
The method for manufacturing a PLED chip is characterised by the following steps: a, using of a GaAs wafer b, fluid epitaxial growth c, masking for PD d, ZN diffusion e, mask removal f, electrode formation of a first electrode by metal
evaporation g, polishing rear side h, electrode formation of a second electrode by metal evaporation.
A PD part and an LED part in such a way are arranged side by side at the same chip. Afterwards the PLED chip is arranged in a small pan or cup and connected to exterior electrodes. This
PLED may be used for simultaneously transmission and receiving modulated optical signals and the PLED was advantageous build as only one unit.
According to a further aspect of the invention, an optical arrangement is to provide which makes it possible simultaneously modulated optical signals to transmit and to receive into and from air or optical fibers. Therefore the PLED is combined with a dual or multiple light path which is characterized in that at least one reflective layer within a lens forms an entry or end portion for a beam waveguide and said layer forming an angle with the optical axis of the lens.
The lens is preferably a plastic spherical lens having a levelled side and said reflective layer is preferably a semi reflective layer. The PLED chip is arranged within the plastic spherical lens at the levelled side in such a way that the LED part or PD part of PLED was fixed to said reflective layer.
From there a dual light path is developed which may be used for simultaneously transmission or receiving of modulated optical signal into/from air or optical fibers. This is especially advantageous for a wireless optical A/V communication system.
In order that the invention may more readily be understood, a description is now given by means of examples in drawings.
In the drawings
Fig. 1 shows a PLED chip including a PD and an LED part.
Fig. 2 illustrates the basic construction of PLED.
Fig. 3 illustrates steps for manufacturing a PLED.
Fig. 4 shows an arrangement for light detection through fiber.
Fig. 5 shows an arrangement for light transmission through fiber.
Fig. 6 illustrates an example for frequency allocation.
Fig. 7 shows a block diagram for a wireless optical
communication system.
Fig.l shows schematically a top view of a PLED chip. The PLED chip consist of a PD and an LED part on an rectangular area which is double in size comparing with a conventional LED as shown in Fig.l. A PD part and an LED part are arranged side by side on the same chip. It is also demonstrated an electrode E facing the surface of the LED part. This electrode E is coupled to a first exterior electrode El by a bonding wire BW as illustrated in Fig.2. The PLED chip may be arranged within a reflective cup RFC.
A connection to a second exterior electrode E2 is made by not shown bottom electrode of the PLED chip. The PLED illustrated
Fig.2 is designed to be used for receiving and/or emitting infrared ray or modulated optical signal. The PLED emits an electrically modulated infrared ray and also detects an electrically modulated infrared ray.
According to Fig.3 the method for manufacturing a PLED chip is characterised by the following steps: a, using a GaAs wafer b, fluid epitaxial growth c, masking for PD d, ZN diffusion e, mask M removal f, electrode formation of first electrode E by metal
evaporation g, polishing rear side h, electrode formation of second electrode E3 by metal evaporation.
The PLED chip is made based on a GaAs wafer and a fluid epitaxial growth for LED analogic to the first two steps of manufacturing an LED but the process respecting to photo diode PD is changed so that the P+ layer, which is assisting to increase the current density for light emission is not made and then only the P-N junction area which gives a photo current is enlarged. The third step concerns masking the half surface of layer P for establishing the PD part. The next step is Zn diffusion for setting up a layer P+. After mask removal follows an electrode formation by metal evaporation on a section of layer P+ surface. This sets up the first electrode
E. After this the next step is polishing rear side and then a second electrode formation had been done by metal evaporation at the bottom side for setting up a second electrode E3 as shown in Fig.3. This PLED chip is arranged in a cup according to Fig.2 or arranged in a spherical lens as shown in Fig.4 and
Fig.5. The spherical lens includes the PLED chip at its levelled side and includes preferably a reflective layer RL to form a dual light path. The combined use of PLED and dual light path lens makes it simultaneous possible infrared ray to emit into air and light from a beam waveguide or optical fibre to detect or to receive as Fig.4 illustrates.
The LED part LED-P of the PLED chip is arranged in the centre of the spherical lens in opposition to the first lens L1 of the spherical lens and the PD part PD-P of the PLED chip is turned to the reflective layer RL. An inner lens L3 within the spherical lens concentrates reflected light from the reflected layer RL to the PD part PD-P. The outside stud of said modified spherical lens is formed as an second lens L2 for coupling to optical fiber or beam waveguid. This optical fiber or beam waveguid guides light to the modified spherical lens which will be detected by the PLED.
Referring to Fig.5 the PD part PD-P of the PLED has been arranged in the centre of the spherical lens and the LED part
LED-P is turned to reflective layer RL. Only this is the difference to the Fig.4 embodiment. That makes it possible infrared ray from the air to detect and infrared ray or light to transmit through optical fiber or beam waveguide simultaneously.
In the case of PLED it is more effective to use the modified or dual light path lens because the focal point by the lens L3 including the reflective layer RL can be placed on different point from that of the first lens L1 and therefore the PLED can be used for the two different functions as shown in Fig.4 and
Fig.5.
Different modulation is used in order to apply the simultaneously functions for both detection and transmission.
Fig. 6 shows an example of frequency allocation for a detection part DT and a transmission part TR. The diagram of Fig. 6 illustrates signal amplitudes A dependent on frequency f.
A detection part DT incudes a first frequency in the range of 40 to 400 kHz described as RCU for a remote control signal. A second and a third detection signal may be radio frequencies
FM1, FM2 for right and left audio channel. The transmission part TR includes for example a composite video signal FMCPV.
Such frequency allocation is for example useful for a system illustrated in Fig. 7. The PLED emits an electrically modulated infrared ray and also detects an electrically modulated infrared ray. Therefore each of frequency spectrums should not consider and their frequency allocation for modulation should be considered.
Referring to Fig. 7 a not shown video signal source is coupled to an input VIDEO IN and passes a video radio frequency modulator VIDEO FM MOD which is coupled to a base terminal of a transistor Q. This transistor Q drives the PLED which is coupled to the collector and the collector path includes also a resistor coupled to ground. The joint between PLED and said resistor is connected with an low-pass filter LPF. The output terminal of said low-pass filter LPF via preamplifier PREAMP is coupled to a second low-pass filter LPF and two band-pass filters BPF providing an remote control signal RCU on the output terminal RCU OUT of an amplifier AMP and right and left channel audio signals on output terminals AUDIO R OUT, AUDIO L
OUT of radio frequency demodulators FM DEMOD. This system may especially because of PLED advantageous used for video signal transmission through a lens and audio signal and/or remote control signal detection through an optical fiber or beam waveguide. Such a system is especially useful for a wireless optical communication system.
Claims (8)
1. Photo light emitting diode (PLED) characterized in that said photo light emitting diode (PLED) includes both a photo diode (PD) and an light emitting diode (LED) on the same chip.
2. Photo light emitting diode (PLED) according to claim 1 characterized in that said photo light emitting diode (PLED) is made as an one chip photo sensitive light emitting diode (LED).
3. Photo light emitting diode (PLED) according to claim 1 or 2 characterized in that said photo light emitting diode (PLED) is formed by a PLED chip (PLED CHIP) within a lens.
4. Photo light emitting diode (PLED) according to claim 3 characterized in that said lens contains at least one reflective layer (RL) said layer (RL) forms an entry or end portion for a beam waveguide and said layer (RL) forms an angle with the optical axis of the lens.
5. Method for manufacturing a photo light emitting diode (PLED) characterized in the following steps: a, using a GaAs wafer b, fluid epitaxial growth c, masking for PD d, ZN diffusion e, mask (M) removal f, electrode formation of a first electrode (E) by metal
evaporation and h, electrode formation of a second electrode (E3) by metal evaporation.
6. Method for using a photo light emitting diode (PLED) characterized in that said photo light emitting diode (PLED) is used for transmission and/or receiving of a modulated optical signal into and/or from air.
7. Method according to claim 6 characterized in that said photo light emitting diode (PLED) is used for transmission and/or receiving of a modulated optical signal into and/or from air and at least one optical fiber or beam waveguid.
8. Method according to claim 7 characterized in that said photo light emitting diode (PLED) is used for video signal transmission through a lens (L1) and audio signal and/or remote control signal detection through an optical fiber or beam waveguide.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9408340A GB2288907A (en) | 1994-04-27 | 1994-04-27 | Combined light emitting diode and photodiode |
| EP95105351A EP0683574B1 (en) | 1994-04-27 | 1995-04-08 | Multiple light path arrangement |
| DE69529940T DE69529940T2 (en) | 1994-04-27 | 1995-04-08 | Optical transmission arrangement with multiple transmission paths |
| US08/428,290 US5953145A (en) | 1994-04-27 | 1995-04-25 | Multiple light path arrangement |
| JP12454695A JP4010463B2 (en) | 1994-04-27 | 1995-04-26 | Multiple optical path device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9408340A GB2288907A (en) | 1994-04-27 | 1994-04-27 | Combined light emitting diode and photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9408340D0 GB9408340D0 (en) | 1994-06-15 |
| GB2288907A true GB2288907A (en) | 1995-11-01 |
Family
ID=10754211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9408340A Withdrawn GB2288907A (en) | 1994-04-27 | 1994-04-27 | Combined light emitting diode and photodiode |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2288907A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2327297A (en) * | 1997-07-14 | 1999-01-20 | Mitel Semiconductor Ab | Lens cap |
| EP1701589A1 (en) * | 2005-03-08 | 2006-09-13 | Sony Ericsson Mobile Communications AB | Electric circuit and method for monitoring a temperature of a light emitting diode |
| WO2006094590A1 (en) * | 2005-03-08 | 2006-09-14 | Sony Ericsson Mobile Communications Ab | Electric circuit and method for monitoring a temperature of a light emitting diode |
| US7400801B1 (en) | 2007-06-19 | 2008-07-15 | Owlink Technology, Inc. | Bidirectional HDCP module using single optical fiber and waveguide combiner/splitter |
| US7421163B1 (en) | 2005-05-31 | 2008-09-02 | Owlink Technology, Inc. | High speed free space optical detection with grating assisted waveguide |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4124860A (en) * | 1975-02-27 | 1978-11-07 | Optron, Inc. | Optical coupler |
| US4293826A (en) * | 1979-04-30 | 1981-10-06 | Xerox Corporation | Hybrid semiconductor laser/detectors |
| US5136152A (en) * | 1990-12-19 | 1992-08-04 | Hoetron, Inc. | Hybrid optical pickup with integrated power emission and reading photodetectors |
| US5140152A (en) * | 1991-05-31 | 1992-08-18 | The University Of Colorado Foundation, Inc. | Full duplex optoelectronic device with integral emitter/detector pair |
-
1994
- 1994-04-27 GB GB9408340A patent/GB2288907A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4124860A (en) * | 1975-02-27 | 1978-11-07 | Optron, Inc. | Optical coupler |
| US4293826A (en) * | 1979-04-30 | 1981-10-06 | Xerox Corporation | Hybrid semiconductor laser/detectors |
| US5136152A (en) * | 1990-12-19 | 1992-08-04 | Hoetron, Inc. | Hybrid optical pickup with integrated power emission and reading photodetectors |
| US5140152A (en) * | 1991-05-31 | 1992-08-18 | The University Of Colorado Foundation, Inc. | Full duplex optoelectronic device with integral emitter/detector pair |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2327297A (en) * | 1997-07-14 | 1999-01-20 | Mitel Semiconductor Ab | Lens cap |
| EP1701589A1 (en) * | 2005-03-08 | 2006-09-13 | Sony Ericsson Mobile Communications AB | Electric circuit and method for monitoring a temperature of a light emitting diode |
| WO2006094590A1 (en) * | 2005-03-08 | 2006-09-14 | Sony Ericsson Mobile Communications Ab | Electric circuit and method for monitoring a temperature of a light emitting diode |
| US7421163B1 (en) | 2005-05-31 | 2008-09-02 | Owlink Technology, Inc. | High speed free space optical detection with grating assisted waveguide |
| US7400801B1 (en) | 2007-06-19 | 2008-07-15 | Owlink Technology, Inc. | Bidirectional HDCP module using single optical fiber and waveguide combiner/splitter |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9408340D0 (en) | 1994-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |