GB2288689A - Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch - Google Patents
Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch Download PDFInfo
- Publication number
- GB2288689A GB2288689A GB9507556A GB9507556A GB2288689A GB 2288689 A GB2288689 A GB 2288689A GB 9507556 A GB9507556 A GB 9507556A GB 9507556 A GB9507556 A GB 9507556A GB 2288689 A GB2288689 A GB 2288689A
- Authority
- GB
- United Kingdom
- Prior art keywords
- switch
- optically activated
- laser diode
- diode driver
- monolithic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000003990 capacitor Substances 0.000 title claims description 13
- 238000004146 energy storage Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000010278 pulse charging Methods 0.000 description 7
- 230000003750 conditioning effect Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011022 operating instruction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940008108A KR970009669B1 (ko) | 1994-04-18 | 1994-04-18 | 레이저 다이오드 드라이버 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9507556D0 GB9507556D0 (en) | 1995-05-31 |
| GB2288689A true GB2288689A (en) | 1995-10-25 |
Family
ID=19381230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9507556A Withdrawn GB2288689A (en) | 1994-04-18 | 1995-04-11 | Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch |
Country Status (8)
| Country | Link |
|---|---|
| KR (1) | KR970009669B1 (enrdf_load_stackoverflow) |
| CN (1) | CN1120752A (enrdf_load_stackoverflow) |
| BR (1) | BR9501372A (enrdf_load_stackoverflow) |
| DE (1) | DE19514066A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2720859A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2288689A (enrdf_load_stackoverflow) |
| IT (1) | IT1273557B (enrdf_load_stackoverflow) |
| TW (1) | TW272321B (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1425987A (en) * | 1972-07-03 | 1976-02-25 | Bofors Ab | Diode laser pumping |
| US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
| US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
-
1994
- 1994-04-18 KR KR1019940008108A patent/KR970009669B1/ko not_active Expired - Fee Related
-
1995
- 1995-04-07 TW TW084103321A patent/TW272321B/zh active
- 1995-04-11 GB GB9507556A patent/GB2288689A/en not_active Withdrawn
- 1995-04-13 IT ITMI950765A patent/IT1273557B/it active IP Right Grant
- 1995-04-13 DE DE19514066A patent/DE19514066A1/de not_active Withdrawn
- 1995-04-13 BR BR9501372A patent/BR9501372A/pt not_active Application Discontinuation
- 1995-04-17 CN CN95105043A patent/CN1120752A/zh active Pending
- 1995-04-18 FR FR9504595A patent/FR2720859A1/fr active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1425987A (en) * | 1972-07-03 | 1976-02-25 | Bofors Ab | Diode laser pumping |
| US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
| US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI950765A1 (it) | 1996-10-13 |
| ITMI950765A0 (it) | 1995-04-13 |
| IT1273557B (it) | 1997-07-08 |
| KR970009669B1 (ko) | 1997-06-17 |
| KR950030420A (ko) | 1995-11-24 |
| FR2720859A1 (fr) | 1995-12-08 |
| CN1120752A (zh) | 1996-04-17 |
| BR9501372A (pt) | 1995-11-14 |
| TW272321B (enrdf_load_stackoverflow) | 1996-03-11 |
| GB9507556D0 (en) | 1995-05-31 |
| DE19514066A1 (de) | 1995-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5450430A (en) | High power laser diode driver utilizing a monolithic semiconductor device | |
| Zutavern et al. | Photoconductive semiconductor switch experiments for pulsed power applications | |
| US4899204A (en) | High voltage switch structure with light responsive diode stack | |
| US5227621A (en) | Ultra-wideband high power photon triggered frequency independent radiator | |
| US4825081A (en) | Light-activated series-connected pin diode switch | |
| US5319218A (en) | Pulse sharpening using an optical pulse | |
| US5185586A (en) | Method and apparatus for digital synthesis of microwaves | |
| Lee | Optical control of semiconductor closing and opening switches | |
| US5444729A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| US5146075A (en) | Ligh activated high power integrated pulser | |
| GB2288484A (en) | High power, pulsed laser diode driver incorporating low impedance storage capacitor | |
| US5406572A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| US5418807A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| US5477556A (en) | High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch | |
| GB2286483A (en) | High power, pulsed laser diode driver incorporating low impedance storage capacitor | |
| US4347437A (en) | Light activated switching by the avalanche effect in semiconductors | |
| US4691111A (en) | Multiple gap optically activated switch | |
| GB2288689A (en) | Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch | |
| US6583678B2 (en) | Electrical circuit and method for pulse modulation of a carrier signal | |
| US5594256A (en) | High voltage switch for pockels cells | |
| US5051789A (en) | Device having two optical ports for switching applications | |
| US5283584A (en) | High power photon triggered ultra-wideband RF radiator with opposite apertures | |
| US5044714A (en) | Variable interval electromagnetic pulse train generator | |
| US4531143A (en) | Laser activated MTOS microwave device | |
| KR970009668B1 (ko) | 레이저 다이오드 드라이버 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |