CN1120752A - 高功率激光二极管驱动器 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 238000004146 energy storage Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
Abstract
一种利用将储能电容器和光激励的类似可控硅结构的p+-n-i-p-n+半导体开关集成在单片衬底上的单片半导体器件的激光二极管驱动器,能够实现高可靠、高效率以及高脉冲重复频率。
Description
本发明涉及一种激光二极管驱动器,特别涉及一种利用具有类似可控硅结构的开关的单片半导体器件的高功率激光二极管驱动器。
我们在未决的韩国专利申请第94—5493号中已经提出了一种利用单片半导体器件的高功率、高脉冲重复频率(PRF)、小型的脉冲激光二极管驱动器。可以把这种将储能电容器和光激励的半导体开关集成在一个单片高阻半导体晶片衬底上,以减小寄生电感和寄生电容的影响。结果,就得到了一种具有快速导通、截止时间短和高PRF的脉冲化高功率激光驱动器。
理想工作条件下,输出的激光脉冲宽度是由在储能的非均匀阻抗条状线(stripline)中的双向波(two—way wave)渡越时间决定。另外,非均匀阻抗条状线引发电流增益。所以,利用非均匀阻抗条状线结构作为储能电容器并利用光激励半导体开关作成开关对产生高峰值功率、高PRF、具有极狭脉宽的激光脉冲是很有效的方法。
然而,这种器件的工作取决于光激励半导体开关,而它需要触发光能去接通该开关。通常,随着普通的光激励开关功率容量增大,所需的触发光能强度也迅速上升。结果,与光激励器件有关的触发激光驱动器的能力和性能迅速降低。
因此,本发明的目的是提供一种利用具有与可控硅类似结构的开关,这种开关能实现高可靠、高效率和高PRF的单片半导体器件的高功率脉冲激光二极管驱动器。
根据本发明,通过提供一种包括集成在一片衬底上的一个储能电容器和光激励半导体开关来实现上述目的,而其中光激励半导体开关具有与可控硅类似的结构。
参照附图,从下面的实施例的说明中,本发明的其他目的和方案将变得更清楚。
图1是依照本发明的激光二极管驱动器的方框图;
图2a和2b说明依照本发明的一种由储能介质和一个光激励纵向半导体开关构成的光激励单片半导体器件,其中:
图2a是单片半导体器件的平面图,以及
图2b是沿图2a的线A—A所得的剖面图;
图2c和2d说明依照本发明的另一种由储能介质和一个光激励横向半导体开关构成的光激励单片半导体器件,其中:
图2c是单片半导体器件的平面图,以及
图2d是沿图2c的线A—A所得的剖面图;
图3a至3c说明依照本发明的光激励单片半导体器件的半导体开关,其中:
图3a是具有P+—n—i—p—n+结构的半导体开关的平面图,
图3b是平衡状态下的半导体开关能带图,以及
图3c是正向偏压状态下的半导体开关能带图;
图4a至4c是分别说明依照本发明的激光二极管驱动器的能量流用图形表示的顺序的波形图。
图1是将本发明应用于高功率脉冲激光二极管驱动器的方框图。如图1所示,该脉冲激光驱动器包括一个控制单元100、一个电功率调节和脉冲充电单元200、一个触发光源和驱动单元300、一个光激励单片半导体单元400以及一个高功率激光阵列单元500。
控制单元100控制从输入级引入的信号,并将此控制信号送到电功率调节和脉冲充电单元200。此控制单元100也把信号加到触发光源和驱动单元300。
电功率调节和脉冲充电单元200靠从控制单元100来的信号调节由AC电源或电池取得的起始电能,而后将一定的能量送给触发光源和驱动单元300。此电功率调节和脉冲充电单元200也将一定的能量供给光激励单片半导体单元400。
触发光源和驱动单元300用以触发由电功率调节和脉冲充电单元200接受的起始电能,从而在单片半导体单元400输出低或中功率的光学激光光线。
单片半导体单元400由一个用以存贮电能的储能介质和一个光激励半导体开关构成,此开关用于在由从触发光源和驱动单元300接收到的激光导通时将容性充的静电能转换成高电流脉冲。此储能介质和半导体开关都集成在一片半导体衬底上。所说光激励半导体开关由一种类似可控硅结构的p+—n—i—p—n+开关构成。此开关在由从触发光源和驱动单元300收到的激光进行其开关操作时使容性充电的静电能转变成高电流脉冲。
高功率激光阵列500将在光激励单片半导体单元400中转换成的高电流脉冲以高功率光脉冲的形式输出。
由来自控制单元100的信号调节由AC电源或电池取得的起始电能,然后用于对单片半导体器件400的储能介质(例如电容器)进行容性充电。随着来自触发光源和驱动单元300的光学光被引入光激励开关,此容性充电的静电能就转换成高电流脉冲而被送到高功率激光器阵列500。结果,此高功率激光器阵列500即输出高功率光脉冲。
根据本发明,所说的脉冲激光二极管驱动器应用单片半导体器件,分别示于衅2a和2b,以及图2c和2d,其中,它们都把储能电容器和光激励开关的功能合并在一片半导体衬底上。
每个单片半导体器件包括一个分离的匹配阻抗,而此阻抗与高功率激光器阵列500相连接。
所说的光激励单片器件由储能介质和纵向半导体开关构成,而此开关具有图2a和2b所示的扇形非均匀条状线结构或具有图2c和2d所示的同轴条形非均匀条状线结构。特别是,纵向开关结构使得把纵向开关结构合并成完整的圆形的单片器件的几何形状能够扩大。
所说储能电容器可通过使半导体衬底1的两侧的电极2金属化而制成。此储能电容器具有一种n—i—p结构。单片储能电容器的电容和此电容器中存储的静电能由下式给出:
C=ε0×εr×A/d 法拉(F)
E=C×V2/2焦耳(J)
其中:ε0是材料的介电常数,εr,电介质材料的介电常数,A是电极的面积,d是器件的厚度,而V是脉冲偏置电压。从此单片器件输出的预期的激光脉冲宽度可用下式表达:
其中,t是储能介质中的双向波形渡越时间;L是储能介质的内、外边缘之间电极的长度。
图3a示出了按照本发明的单片半导体器件的类似可控硅的半导体开关。此半导体开关具有p+—n—i—p—n+结构。图3b给出了平衡状态下与可控硅类似的半导体开关的能带图。另一方面,图3c表示通常正向偏置工作状态下与可控硅类似的半导体开关的能带图。
如图3c所示,在通常正向偏置工作状态下,由高掺杂的p1 +和n1层产生的结J1,及由高掺杂的p2和n2 +层产生的结J3成为正偏的pn结。因此,大部分偏置电压降落在当中的n—i—p二极管上。所以,在脉冲偏置期间,区域n1—i—p2(n—i—p二极管)起阻塞二极管的作用。
当将触发光脉冲引入类似可控硅的p+—n—i—p—n+结构开关时,阻塞n—i—p二极管中就会产生电子—空穴对。这些光生电子—空穴对被电场分开,产生光电流。此光电流立即增大了i区的导电性,以致整个i层上的电压急剧减小,而转移到p1 +—n1结和p2—n2 +结处。由p1 +结和p2—n+结来的载流子注入促进了该开关导通。
通过向控制单元100发送工作指令,驱动器的动作启动,开始了一系列作用。首先,激发电功率调节和脉冲充电单元200。调节来自AC电源或电池的起始电功率,并用此电功率给光激励单片半导体单元400的储能介质(即储能电容器)脉冲充电。
当脉冲偏置电压达到峰值电压时,触发光源和驱动单元300中触发激光二极管的驱动电路就以很高的PRF产生快速上升时间触发光脉冲,将所产生的触发光脉冲引入单片半导体单元400类似可控硅的p+—n—i—p—n+开关。一旦此有适当波长和足够光功率的触发光线穿透进入单片半导体单元400类似可控硅的p+—n—i—p—n+开关的有源区时,就会产生足够多的光生电子—空穴对,从而启动开关转换状态,并导致完全截止(导通)的一种开关状态。
开关导通时,在由脉冲偏置的单片器件的内电极处的边界条件就从高阻抗(断开)状态转变成高导电(闭合)状态。随着内电极边界条件成为高导电状态,存储在单片半导体单元400的静电能就变为行波,开始流过开关,并以大电流脉冲形式传送到高功率激光器阵列500。结果,高功率激光器阵列500就输出脉冲宽度为PW(PW= 的激光脉冲。
图4a至4c给出了能量流的相继情况。
如上所述很明显,本发明提供了一种使用具有p+—n—i—p—n+开关结构的单片光激励半导体器件的高功率激光二极管驱动器。根据本发明,此单片半导体器件包括用以存储电能的储能介质和光激励半导体开关构成,此半导体开关使容性充电的静电能在开关被激光变为导通时转换成大电流脉冲。借助这种结构,此单片光激励半导体器件能产生大幅度电流脉冲。
本单片器件具有增益机制以及把电路的有害效应,诸如寄生电感、电容等降至最低。另外,由一个来自低(或中等)功率激光二极管的触发光脉冲使开关导通达到极快的上升与下降时间。因此,本发明所提出的驱动器能在高PRF下以快速上升时间和快速下降时间产生高功率激光输出脉冲。
虽然为说明起见已披露了本发明的优选实施例,本领域的技术人员都明白可以有各种各样的添加和替代,而不会脱离由所附权利要求书揭示的本发明的构思和范围。
Claims (2)
1.一种激光二极管驱动器,包括集成在一片衬底上的一个储能电容器和一个光激励半导体开关,其中,所说光激励半导体开关具有一种类似可控硅的结构。
2.按照权利要求1的激光二极管驱动器,其特征在于:所说类似可控硅的结构是p+—n—i—p—n+结构。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR8108/94 | 1994-04-18 | ||
KR1019940008108A KR970009669B1 (ko) | 1994-04-18 | 1994-04-18 | 레이저 다이오드 드라이버 |
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CN1120752A true CN1120752A (zh) | 1996-04-17 |
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Application Number | Title | Priority Date | Filing Date |
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CN95105043A Pending CN1120752A (zh) | 1994-04-18 | 1995-04-17 | 高功率激光二极管驱动器 |
Country Status (8)
Country | Link |
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KR (1) | KR970009669B1 (zh) |
CN (1) | CN1120752A (zh) |
BR (1) | BR9501372A (zh) |
DE (1) | DE19514066A1 (zh) |
FR (1) | FR2720859A1 (zh) |
GB (1) | GB2288689A (zh) |
IT (1) | IT1273557B (zh) |
TW (1) | TW272321B (zh) |
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SE364403B (zh) * | 1972-07-03 | 1974-02-18 | Bofors Ab | |
US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
-
1994
- 1994-04-18 KR KR1019940008108A patent/KR970009669B1/ko not_active IP Right Cessation
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1995
- 1995-04-07 TW TW084103321A patent/TW272321B/zh active
- 1995-04-11 GB GB9507556A patent/GB2288689A/en not_active Withdrawn
- 1995-04-13 BR BR9501372A patent/BR9501372A/pt not_active Application Discontinuation
- 1995-04-13 DE DE19514066A patent/DE19514066A1/de not_active Withdrawn
- 1995-04-13 IT ITMI950765A patent/IT1273557B/it active IP Right Grant
- 1995-04-17 CN CN95105043A patent/CN1120752A/zh active Pending
- 1995-04-18 FR FR9504595A patent/FR2720859A1/fr active Pending
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Publication number | Publication date |
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BR9501372A (pt) | 1995-11-14 |
FR2720859A1 (fr) | 1995-12-08 |
TW272321B (zh) | 1996-03-11 |
GB2288689A (en) | 1995-10-25 |
DE19514066A1 (de) | 1995-11-23 |
IT1273557B (it) | 1997-07-08 |
KR970009669B1 (ko) | 1997-06-17 |
ITMI950765A0 (it) | 1995-04-13 |
KR950030420A (ko) | 1995-11-24 |
ITMI950765A1 (it) | 1996-10-13 |
GB9507556D0 (en) | 1995-05-31 |
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