FR2720859A1 - Circuit de commande de diode laser de grande puissance utilisant un composant à semiconducteur monolithique à interrupteur à structure de type thyristor. - Google Patents

Circuit de commande de diode laser de grande puissance utilisant un composant à semiconducteur monolithique à interrupteur à structure de type thyristor. Download PDF

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Publication number
FR2720859A1
FR2720859A1 FR9504595A FR9504595A FR2720859A1 FR 2720859 A1 FR2720859 A1 FR 2720859A1 FR 9504595 A FR9504595 A FR 9504595A FR 9504595 A FR9504595 A FR 9504595A FR 2720859 A1 FR2720859 A1 FR 2720859A1
Authority
FR
France
Prior art keywords
switch
control circuit
laser diode
monolithic semiconductor
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR9504595A
Other languages
English (en)
French (fr)
Inventor
Hyung-Dong Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
COSMO LASER Inc
Original Assignee
COSMO LASER Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by COSMO LASER Inc filed Critical COSMO LASER Inc
Publication of FR2720859A1 publication Critical patent/FR2720859A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
FR9504595A 1994-04-18 1995-04-18 Circuit de commande de diode laser de grande puissance utilisant un composant à semiconducteur monolithique à interrupteur à structure de type thyristor. Pending FR2720859A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008108A KR970009669B1 (ko) 1994-04-18 1994-04-18 레이저 다이오드 드라이버

Publications (1)

Publication Number Publication Date
FR2720859A1 true FR2720859A1 (fr) 1995-12-08

Family

ID=19381230

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9504595A Pending FR2720859A1 (fr) 1994-04-18 1995-04-18 Circuit de commande de diode laser de grande puissance utilisant un composant à semiconducteur monolithique à interrupteur à structure de type thyristor.

Country Status (8)

Country Link
KR (1) KR970009669B1 (zh)
CN (1) CN1120752A (zh)
BR (1) BR9501372A (zh)
DE (1) DE19514066A1 (zh)
FR (1) FR2720859A1 (zh)
GB (1) GB2288689A (zh)
IT (1) IT1273557B (zh)
TW (1) TW272321B (zh)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE364403B (zh) * 1972-07-03 1974-02-18 Bofors Ab
US5121401A (en) * 1990-05-03 1992-06-09 Motorola, Inc. Pulsed modulators utilizing transmission lines
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Also Published As

Publication number Publication date
BR9501372A (pt) 1995-11-14
TW272321B (zh) 1996-03-11
GB2288689A (en) 1995-10-25
DE19514066A1 (de) 1995-11-23
IT1273557B (it) 1997-07-08
KR970009669B1 (ko) 1997-06-17
ITMI950765A0 (it) 1995-04-13
KR950030420A (ko) 1995-11-24
ITMI950765A1 (it) 1996-10-13
CN1120752A (zh) 1996-04-17
GB9507556D0 (en) 1995-05-31

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