GB9507556D0 - High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch - Google Patents

High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch

Info

Publication number
GB9507556D0
GB9507556D0 GBGB9507556.0A GB9507556A GB9507556D0 GB 9507556 D0 GB9507556 D0 GB 9507556D0 GB 9507556 A GB9507556 A GB 9507556A GB 9507556 D0 GB9507556 D0 GB 9507556D0
Authority
GB
United Kingdom
Prior art keywords
thyristor
semiconductor device
laser diode
high power
power laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9507556.0A
Other versions
GB2288689A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB9507556D0 publication Critical patent/GB9507556D0/en
Publication of GB2288689A publication Critical patent/GB2288689A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Thyristors (AREA)
GB9507556A 1994-04-18 1995-04-11 Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch Withdrawn GB2288689A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008108A KR970009669B1 (en) 1994-04-18 1994-04-18 Laserdiode driver

Publications (2)

Publication Number Publication Date
GB9507556D0 true GB9507556D0 (en) 1995-05-31
GB2288689A GB2288689A (en) 1995-10-25

Family

ID=19381230

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9507556A Withdrawn GB2288689A (en) 1994-04-18 1995-04-11 Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch

Country Status (8)

Country Link
KR (1) KR970009669B1 (en)
CN (1) CN1120752A (en)
BR (1) BR9501372A (en)
DE (1) DE19514066A1 (en)
FR (1) FR2720859A1 (en)
GB (1) GB2288689A (en)
IT (1) IT1273557B (en)
TW (1) TW272321B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE364403B (en) * 1972-07-03 1974-02-18 Bofors Ab
US5121401A (en) * 1990-05-03 1992-06-09 Motorola, Inc. Pulsed modulators utilizing transmission lines
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Also Published As

Publication number Publication date
BR9501372A (en) 1995-11-14
FR2720859A1 (en) 1995-12-08
TW272321B (en) 1996-03-11
GB2288689A (en) 1995-10-25
DE19514066A1 (en) 1995-11-23
IT1273557B (en) 1997-07-08
KR970009669B1 (en) 1997-06-17
ITMI950765A0 (en) 1995-04-13
KR950030420A (en) 1995-11-24
ITMI950765A1 (en) 1996-10-13
CN1120752A (en) 1996-04-17

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)