GB2288678B - Voltage pumping circuits - Google Patents

Voltage pumping circuits

Info

Publication number
GB2288678B
GB2288678B GB9511378A GB9511378A GB2288678B GB 2288678 B GB2288678 B GB 2288678B GB 9511378 A GB9511378 A GB 9511378A GB 9511378 A GB9511378 A GB 9511378A GB 2288678 B GB2288678 B GB 2288678B
Authority
GB
United Kingdom
Prior art keywords
voltage pumping
pumping circuits
circuits
voltage
pumping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9511378A
Other versions
GB9511378D0 (en
GB2288678A (en
Inventor
Do-Chan Choi
Dong-Soojun
Yong-Sik Seok
Chan-Sok Park
Young-Gwon Choi
Dong-Jae Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910019740A external-priority patent/KR940008719B1/en
Priority claimed from KR1019910020137A external-priority patent/KR940009249B1/en
Priority claimed from KR1019910022108A external-priority patent/KR940006504B1/en
Priority claimed from KR1019920011242A external-priority patent/KR950004559B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9223478A external-priority patent/GB2261307B/en
Publication of GB9511378D0 publication Critical patent/GB9511378D0/en
Publication of GB2288678A publication Critical patent/GB2288678A/en
Application granted granted Critical
Publication of GB2288678B publication Critical patent/GB2288678B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
GB9511378A 1991-11-07 1992-11-09 Voltage pumping circuits Expired - Lifetime GB2288678B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1019910019740A KR940008719B1 (en) 1991-11-07 1991-11-07 Voltage boosting circuit
KR1019910020137A KR940009249B1 (en) 1991-11-13 1991-11-13 Boosting compensation circuit of the semiconductor memory device
KR1019910022108A KR940006504B1 (en) 1991-12-04 1991-12-04 Clamper circuit of semiconductor memory device
KR1019920011242A KR950004559B1 (en) 1992-06-26 1992-06-26 Boosting device of semiconductor memory
GB9223478A GB2261307B (en) 1991-11-07 1992-11-09 Semiconductor memory device including voltage pumping circuit

Publications (3)

Publication Number Publication Date
GB9511378D0 GB9511378D0 (en) 1995-08-02
GB2288678A GB2288678A (en) 1995-10-25
GB2288678B true GB2288678B (en) 1996-04-03

Family

ID=27517156

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9511378A Expired - Lifetime GB2288678B (en) 1991-11-07 1992-11-09 Voltage pumping circuits

Country Status (1)

Country Link
GB (1) GB2288678B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0172337B1 (en) * 1995-11-13 1999-03-30 김광호 Semiconductor memory device
FR2770325B1 (en) * 1997-10-29 2001-10-05 Sgs Thomson Microelectronics VOLTAGE GENERATING CIRCUIT FOR PROGRAMMING OR ERASING A MEMORY USING FLOATING GATE TRANSISTORS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030244A1 (en) * 1979-06-05 1981-06-17 Fujitsu Limited Mos device with substrate-bias generating circuit
US4918663A (en) * 1987-09-16 1990-04-17 Motorola, Inc. Latch-up control for a CMOS memory with a pumped well
US5023465A (en) * 1990-03-26 1991-06-11 Micron Technology, Inc. High efficiency charge pump circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030244A1 (en) * 1979-06-05 1981-06-17 Fujitsu Limited Mos device with substrate-bias generating circuit
US4918663A (en) * 1987-09-16 1990-04-17 Motorola, Inc. Latch-up control for a CMOS memory with a pumped well
US5023465A (en) * 1990-03-26 1991-06-11 Micron Technology, Inc. High efficiency charge pump circuit

Also Published As

Publication number Publication date
GB9511378D0 (en) 1995-08-02
GB2288678A (en) 1995-10-25

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20121108