GB2279808A - Thermally matched readout/detector assembly and method for fabricating same - Google Patents
Thermally matched readout/detector assembly and method for fabricating sameInfo
- Publication number
- GB2279808A GB2279808A GB9418859A GB9418859A GB2279808A GB 2279808 A GB2279808 A GB 2279808A GB 9418859 A GB9418859 A GB 9418859A GB 9418859 A GB9418859 A GB 9418859A GB 2279808 A GB2279808 A GB 2279808A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silicon
- bonded
- assembly
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- 239000000463 material Substances 0.000 abstract 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005382 thermal cycling Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
- B23K35/004—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a metal of the iron group
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Abstract
An intergrated circuit assembly includes a silicon thin film circuit bonded to a substrate of a material selected to provide the assembly with an effective thermal expansion characteristic that approximately matches hat of another device, such as HgCdTe detector. The assembly, when bump bonded with the device, is resistant to failure when subjected to thermal cycling. A first method for manufacturing the assembly includes the steps of forming a desired circuit in a thin layer (12) of silicon on a silicon substrate of a bonded silicon wafer. The thin silicon layer including the circuit is is then bonded to the selected substrate material (24). Thereafter the silicon substrate is removed and the resulting assembly may be mated to the device (36). A second method employs a two stage transfer technique wherein the processed thin silicon layer is bonded to a first, temporary substrate; the silicon substrate is removed; a second, permanent substrate is attached; and the first substrate is removed. The second substrate is comprised of a material selected for providing the assembly with a coefficient of thermal expansion that is matched to the material of the device. <IMAGE>
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US621293A | 1993-01-19 | 1993-01-19 | |
PCT/US1994/000370 WO1994017557A1 (en) | 1993-01-19 | 1994-01-10 | Thermally matched readout/detector assembly and method for fabricating same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9418859D0 GB9418859D0 (en) | 1994-11-09 |
GB2279808A true GB2279808A (en) | 1995-01-11 |
GB2279808B GB2279808B (en) | 1996-11-20 |
Family
ID=46257859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9418859A Expired - Fee Related GB2279808B (en) | 1993-01-19 | 1994-01-10 | Thermally matched readout/detector assembly and method for fabricating same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH07506937A (en) |
GB (1) | GB2279808B (en) |
WO (1) | WO1994017557A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19513678C2 (en) * | 1995-04-11 | 2002-03-14 | Aeg Infrarot Module Gmbh | Detector arrangement consisting of several submodules |
DE19546423C1 (en) * | 1995-12-12 | 1997-02-20 | Siemens Ag | Radiation sensitive transducer e.g. CCD or photodiode array |
SG83089A1 (en) * | 1996-10-18 | 2001-09-18 | Eg & G Internat | Isolation process for surface micromachined sensors and actuators |
CN101714516A (en) * | 2001-08-24 | 2010-05-26 | 肖特股份公司 | Process for making contact with and housing integrated circuits |
WO2003038492A2 (en) * | 2001-10-26 | 2003-05-08 | Massachusetts Institute Of Technology | Hybrid integration of electrical and optical chips |
US7723815B1 (en) * | 2004-07-09 | 2010-05-25 | Raytheon Company | Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization |
US7576404B2 (en) * | 2005-12-16 | 2009-08-18 | Icemos Technology Ltd. | Backlit photodiode and method of manufacturing a backlit photodiode |
US8154099B2 (en) | 2009-08-19 | 2012-04-10 | Raytheon Company | Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate |
JP5587826B2 (en) * | 2011-05-12 | 2014-09-10 | 日本電信電話株式会社 | Semiconductor device |
IL242952B (en) | 2015-12-06 | 2021-02-28 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Photodetector-arrays and methods of fabrication thereof |
US20180068843A1 (en) | 2016-09-07 | 2018-03-08 | Raytheon Company | Wafer stacking to form a multi-wafer-bonded structure |
US10453731B2 (en) * | 2016-10-21 | 2019-10-22 | Raytheon Company | Direct bond method providing thermal expansion matched devices |
US10300649B2 (en) | 2017-08-29 | 2019-05-28 | Raytheon Company | Enhancing die flatness |
US10847569B2 (en) | 2019-02-26 | 2020-11-24 | Raytheon Company | Wafer level shim processing |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0371862A2 (en) * | 1988-11-29 | 1990-06-06 | The University Of North Carolina At Chapel Hill | Method of forming a nonsilicon semiconductor on insulator structure |
US4943491A (en) * | 1989-11-20 | 1990-07-24 | Honeywell Inc. | Structure for improving interconnect reliability of focal plane arrays |
JPH03266478A (en) * | 1990-03-15 | 1991-11-27 | Fujitsu Ltd | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069243B2 (en) * | 1987-09-01 | 1994-02-02 | 日本電気株式会社 | Solid-state image sensor |
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1994
- 1994-01-10 GB GB9418859A patent/GB2279808B/en not_active Expired - Fee Related
- 1994-01-10 JP JP6517072A patent/JPH07506937A/en active Pending
- 1994-01-10 WO PCT/US1994/000370 patent/WO1994017557A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0371862A2 (en) * | 1988-11-29 | 1990-06-06 | The University Of North Carolina At Chapel Hill | Method of forming a nonsilicon semiconductor on insulator structure |
US4943491A (en) * | 1989-11-20 | 1990-07-24 | Honeywell Inc. | Structure for improving interconnect reliability of focal plane arrays |
JPH03266478A (en) * | 1990-03-15 | 1991-11-27 | Fujitsu Ltd | Semiconductor device |
Non-Patent Citations (2)
Title |
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PATENT ABSTRACTS OF JAPAN vol16 no79 (E-1171)26 February1992& JP A 03266478 (FUJITSU) * |
PPATENT ABSTRACTS OF JAPAN vol13 no270 (E-776)8 March 1989 &JP A 010621056 (NEC CORP) * |
Also Published As
Publication number | Publication date |
---|---|
WO1994017557A1 (en) | 1994-08-04 |
GB2279808B (en) | 1996-11-20 |
JPH07506937A (en) | 1995-07-27 |
GB9418859D0 (en) | 1994-11-09 |
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PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19990110 |