GB2257986A - Diamond coated carrier for carrying wafers requiring chemical processing - Google Patents

Diamond coated carrier for carrying wafers requiring chemical processing Download PDF

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Publication number
GB2257986A
GB2257986A GB9214697A GB9214697A GB2257986A GB 2257986 A GB2257986 A GB 2257986A GB 9214697 A GB9214697 A GB 9214697A GB 9214697 A GB9214697 A GB 9214697A GB 2257986 A GB2257986 A GB 2257986A
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GB
United Kingdom
Prior art keywords
carrier
diamond
wafer carrier
base portion
carrier according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9214697A
Other versions
GB9214697D0 (en
Inventor
Kirk Jens Mikkelsen
John Bruce Goodman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fluoroware Inc
Original Assignee
Fluoroware Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fluoroware Inc filed Critical Fluoroware Inc
Publication of GB9214697D0 publication Critical patent/GB9214697D0/en
Publication of GB2257986A publication Critical patent/GB2257986A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)

Description

DIAMOND COATED CARRIER 223 7.?'),j This invention relates to diamond
coated carriers for carrying one or a batch of silicon wafers or other semiconductor wafers, memory disks, coated substrates, flat panel displays, and similar disk-like objects requiring chemical processing during manufacture.
Carriers of the relevant type have been used during processing of such disk-like objects and during storage of such objects between process steps. Representative carriers of this type are described and illustrated in U.S. Patents 3,961,877; 4,557,382; 4,815,601; 4,930,634; and 4,949,848. Most such carriers have been molded of various plastics, but a few have been machined or fabricated of metals such as aluminum and steel, and of quartz and nonmoldable plastics such as polytetrafluoroethylene (PTFE). Moldable thermoplastics used in such carriers include perfluoroalkoxy (Teflon PFA), tetrafluoroethylene-perfluoropropylene copolymer (Teflon FEP), polypropylene, high density polyethylene, polycarbonates, polyetheretherketone (PEEK), polyethersulfone (PES), polyaryletherketone (PAEK), acrylonitrilebutadienestyrene (ABS), and others. (Teflon is a registered trademark of DuPont.) Carriers made of certain of these plastics, and others such as polypropylene high density polyethylene, are useful only to store wafers between process steps. others, such as the fluropolymers, carry the wafers during processing of the wafers because of their capability of withstanding the deteriorating effects of reagents and many of the higher temperatures involved in processing.
All of these carrier materials have limiting capabilities under the severe conditions to which they are exposed. The fluoropolymer materials, PFA, FEP and PTFE, are the only common materials which are resistant to the wafer processing chemicals, but they absorb small quantities of chemicals and carry over the chemicals which are permeated in subsequent process steps causing wafer contamination, and which are outgassed onto the wafers. Heat above 180C causes such fluoropolymers to lose structural strength, rigidity, and dimensional stability, which causes difficulties in robot handling of such heated carriers filled with wafers. All other moldable materials are less chemical resistant and many have lower rated use temperatures than PFA. Attempts have been made to rigidify PFA carriers with rigid inserts in the plastic material, but these have not proven altogether satisfactory. See U.S. Patent 4,872,554. It is desirable to expose wafers to temperatures of 200C to 300C in certain chemical process steps, and to temperatures of 250C to 300C in process steps involving photoresist.
Teflon carriers, though of high lubricity, abrade and slough particles onto wafers during processing as wafers are moved into and out of the carriers. static charges are easily and commonly generated in such carriers, with the effect of attracting random airborne particles and other contaminants, again causing wafer contamination. Although carbon is sometimes added to the plastic to dissipate static charges, addition of carbon increases chemical absorption and generation of particles, and may result in increased wafer contamination.
Quartz carriers have been used particularly for high temperature processes, such as baking in the general ranges of 800C to 1700C or more, but such quartz carriers are considerably more expensive than the plastic molded carriers and are considerably more likely to damage the wafers.
Carriers of other materials may have certain better characteristics than PFA, but their use requires that the wafers be periodically transferred from one carrier to another, which causes particle generation and adds additional process steps.
Where, herein, reference is made to a wafer, it is intended to specifically include all such disk-like objects referred to in the first paragraph above and similar objects requiring chemical processing.
An object of the invention is to provide a new and improved carrier for one or a multiplicity of such wafers during processing, storage, and transport, to minimize the contamination of the wafers.
According to the invention, there is provided a diamond coated wafer carrier.
Preferably, the wafer carrier includes a carrier base shaped for all desired functional characteristics of holding one or more wafers in particular positions and allowing ready and easy manual or robotic handling of the carrier, and ready and easy loading and unloading of wafers, and having a diamond film or coating ensheathing the entire carrier base.
Preferably, the wafer cdrrier includes a carrier base made of material which is dimensionally stable to retain its shape and size under varying temperature conditions encountered in wafer processing, and a diamond coating ensheathing the carrier base. The carrier base may be typically molded of one of the thermoplastic ma-terials such as PEEK, PAEK, PEKK and PEK, or metal, i.e., steel, or alloys thereof, or other dimensionally stable metals or thermoset materials such as epoxys or polyimides, or materials with a ceramic matrix, such as quartz. otherwise, if less expensive materials are desired, the carrier base may be molded of polycarbonate, polypropylene, polyethylene, ABS, etc.
The carrier base may in some instances be fabricated of more than one material in a composite material. For instance, the carrier base may comprise a molded material as described above, around and embracing a highly stable core. The composite carrier base may then be coated or ensheathed with the diamond film.
The material in the carrier base may also comprise fibers such as carbon fibers which will reduce the coefficient of expansion and provide improved stiffness at higher temperatures.
Such a diamond coated wafer carrier provides numerous advantages. Importantly, the coating renders the carrier to be chemically inert and impermeable to prevent chemicals and gases from attacking the carrier base and preventing chemicals and gases from being absorbed into the carrier base. Neither does the diamond coating absorb such chemicals and gases. As a result, later permeation and outgassing of chemicals from the coated carrier onto wafers being processed is absolutely minimized. The coating is virtually unaffected by the harsh chemicals used in processing wafers. The diamond coating on the carriers is also static dissipative and accordingly, the coated carrier does not attract airborne and other particles. Also, the diamond coating is dimensionally stable under a wide range of operating temperatures to which the carrier is exp osed during wafer processing. Because of the inherent lubricity of the diamond coating, the generation of contaminating particles therefrom is prevented or minimized.
Embodiments of the invention will now be described, by way of example, with reference to the accompanying drawings, of which:
Figure 1 is a perspective view of a wafer carrier typical of those used for processing silicon wafers; Figure 2 is a detail section view of a greatly enlarged portion of the wafer carrier similar to the carrier of F-1-'gure 1; Figure 3 is an elevation view, partly broken away and shown in section, of a carrier used in shipping wafers or substrates; Figure 4 is an elevation view of box-like closed shipping container or carrier for shipping wafers and substrates; Figure 5 is a carrier primarily for flat panel displays which may be extremely large, but are processed with the use of a carrier; Figure 6 is an individual wafer package or carrier for a single wafer; and Figure 7 is a perspective view of still another form of wafer carrier.
All of the wafer carriers of Figures 1 and 3-7 are shaped and arranged for carrying wafers, such as the wafers W in Figure 1, or other substrates of various sorts that must be processed with chemical treatments during processing of the wafers into their final ultimate form, all of which are included by definition herein as wafers.
The wafer carrier 10 of Figure 1 is a rather typical carrier in which wafers W are confined during processing of the wafers using spray techniques in most cases. The sidewalls 11 of the carrier have numerous ribs or "teeth" 12 spaced from each other to receive the edges of the wafers therebetween. The spaces between the ribs 12 open into slots 13 so as to accommodate rapid movement of liquids and gases through the carrier for processing of the wafers and for cleaning the carrier 10 together with the wafers at the ends of various steps in the processing cycle.
In Figure 3, a wafer carrier, also known as a disc shipper, is indicated in general by the numeral 20 and is fitted with a bottom cover 21 over the open bottom of the carrier and a top cover 22 over the top of the carrier and traversing downwardly over the open ends of the carrier. The carrier 20 has ribs or spacers 23 to receive the wafers therebetween and hold the wafers spaced from each other while they are in the carrier. This carrier 20 is particularly suited for transport of wafers; and the sidewalls 24 do not have the open slot as illustrated in Figure 1.
Another type of wafer carrying device is illustrated in Figure 4 and in this instance, the carrier 30 is a two-part box or container having a base portion 31 and a cover portion 32, both of which have interior ribs 33, 34 to hold the wafers against movement in the container. In this particular device, resilient cushioning fingers 34 are available which engage the individual wafers and tend to minimize their movement.
The carrier 40 of Figure 5 is a fabricated device of multiple sections of molded parts. The two end walls 41, 42 are individually molded, and the sidewall segments 43 are separately molded and assembled and affixed to the end walls 41, 42.
The carrier 40 is well suited to carry flat panel displays using glass as a substrate or other materials, wherein the panels being confined and processed may be 12 to 14 inches across. Again, the panels are confined in slots between spaced ribs in the sidewalls, as illustrated.
The device of Figure 6 is a wafer carrier indicated in general by numeral 50, well suited for carrying a single round wafer W of the type illustrated in Figure 1. The wafer carrier 50 has a molded container base 51 and a cover 52 hinged at 53 to the base container 51. The container 50 has fittings on the inside so as to support the wafer contained and to minimize movement within the closed container.
The carrier of Figure 7 is indicated in general by numeral 50 and is similar to the carrier of Figure 7 in U.S. Patent 4,872,554. The carrier 50 comprises molded end walls 51, 52 joined to spaced cylindrical -molded 8 - rods 53, 54. The rods 53 form sidewalls 55 of the carrier, and rods 54 support the wafers and may be considered portions of the sidewalls 55. The rods 53, 54 may incorporate stiff reinforcing rods or inserts 56 formed of quartz, or ceramics, or glass, or other temperature stable material and completely embedded in the rods 53, 54; and in some instances, the end walls 51, 52 may also incorporate stiffening inserts 57 of materials similar to the inserts 56 and completely embedded in the end walls.
The rods 53, 54 also comprise spacer teeth 58 which maintain the wafers in spaced relation to each other.
Carrier 50 is well suited to comprise the diamond coating because of the open construction of the carrier. The sidewalls 55 comprise wide openings 59 between the rods 53, 54, along with the open top 50.1, open bottom 50. 2, and open areas 50.3, 50.4 in the end walls, all of which contribute to allowing ready and easy application of the diamond coating.
Figure 2 represents a detail section of any or all of these containers or carriers, and Figure 2 shows a portion of a carrier 60 having a carrier base 61 which, in most cases, would be molded and covered by a coating or sheath 62 of diamond-like material. The portion of carrier 60 illustrated in Figure 2 actually illustrates portions of the ribs 63 in the carrier sidewalls for maintaining the wafers W separated from each other; and the spaces 64 between the ribs are where the wafers are confined and the slots 65 facilitate movement of processing fluids onto and away from the wafers being processed. The carrier base 61 is molded or formed of one of the materials mentioned previously, and may optionally comprise carbon fibers 16 as discrete fragments of another material embedded therein.
All of the wafer carrier container devices 10, 20, 30, 40 and 50 of the drawings illustrate carriers or containers which have the diamond-like coating 62 thereon.
It will be recognized that the carrier base 61 establishes the exact size and shape of the carrier which the carrier as a whole, is to have. In the preferred form, the carrier base 61 is made of a thermoplastic from the etherketone family of materials, i.e., PEEK, PAEK, PEKK, and PEK.
Other materials may also be used in the carrier base 61, and may include such materials as steel and alloys thereof, or other more dimensionally stable metals, or may be made of less expensive materials such as polycarbonate, polypropylene, polyethylene, ABS, etc.
The material in the diamond-like coating may be otherwise described as diamond, polycrystalline diamond, diamond-like carbon., amorphous diamond, hydrogenated diamond-like carbon, single-crystal heteroepitaxial diamond. In this diamond-like coating, the majority of the carbon atoms are diamond bonded, resulting in a hard, nearly perfect, chemically resistant coating which has a low coefficient of friction and is nearly impermeable to liquid and gaseous reagents. The coating 62 is applied by chemical vapor deposition (CVD), although the methods of applications of the coating may vary slightly.
Preferably, the chemical vapor deposition process to apply the diamond coating uses an ion beam technique. The ion source, preferably a 30 centimeter diameter ion source with its extraction grids masked to lo centimeters in diameter, is used to directly deposit the diamond-like carbon film. The ion source uses.argon gas in the hollow cathode located in the main discharge chamber as well as in the neutralizer. After a discharge is established between the cathode and anode, methane (CH4) is introduced through a manifold into the discharge chamber. For this deposition, the molar ratio methane to argon was 0.28. The ratio was found to be ideal for generating films under one set of conditions. In these procedures, the total ion beam energy is the sum of the discharge voltage and the screen grid voltage and is around 100 eV. Typical current densities at these conditions are 1 ma/centimeter2 at a distange of 2.5 centimeters axially downstream of the grids. Films are deposited at these conditions and accumulated as needed.
A slightly different technique, which has been scaled to coat large areas, is a hot-filament assisted WD process in which the feed gas is thermally activated by a refractory metal filament heated to 1800 to 2300C. other methods utilize plasma activated feed gases (PACVD); and recently, the basic WD process has been extended to high pressure discharges in an effort to increase diamond film growth rates.
Originally, the CVD process floods methane and hydrogen gas with microwaves until it turns into plasma at 11000C. The carbon from the methane is deposited on a substrate while the hydrogen keeps the carbon from collapsing back from diamond into graphite. In some instances, reaction chamber temperatures may be down to 250'C, using halocarbons like carbon tetrafluoride instead of hydrocarbon feedstocks like methane. The more recent ion beam has been substituted for microwave discharges; and also plasma torches, hot filaments and even arc welding torches have been substituted for the microwave discharges.
The resulting diamond coated carrier provides numerous advantages. The diamond coating is chemically resistant to chemicals used in the semiconductor industry in processing wafers and is of high purity. The coating is not attacked, degraded or dissolved by chemicals found in the semiconductor industry. The coating is made of carbon or carbon and hydrogen and will not leach or outgas contaminants into the wafer processing environment.
Diamond coating onto the base carriers is nonpermeable. Since the coating is essentially impermeable, it will not absorb chemicals and will not have chemical carryover problems. Since the coating is not permeable, it will protect any carrier base from chemical attack. Since the diamond coating is nonpermeable, it will prevent organics from outgassing from the carrier base into the wafer processing environment.
Futhermore, the diamond coating is dimensionally stable at elevated temperatures and at low temperatures. The coating is stable up to 40CC, allowing the carrier base, made of dimensionally stable material, such as PEEK, PAEK, PEKK and PEK, or even metal, to be used. The carrier then has good structural integrity from subambient to 4000C if the appropriate base carrier material is used in the carrier base 61. As indicated previously, these temperature ranges may be used in the processing of wafers, either in the chemical steps or in the steps of processing photoresist.
Of course, less expensive materials such as polycarbonate, polypropylene, polyethylene, ABS, etc., can also be used for the inner carrier base 61 if a less expensive, lower temperature carrier is desired.
The coating 62 on the carrier base 61 may have a thickness which is typically in the range of +.05 to 1. 5]AM.
The present invention may be embodied in other specific forms without departing from the spirit or essential attribues thereof, and it is therefore desired that the present embodiment be considered in all respects as illustrative and not restrictive, reference being made to the appended claims rather than to the foregoing description to indicate the scope of the invention.
- 13

Claims (16)

WE CLAIM:
1. A wafer carrier comprising a carrier base portion ensheathed within a diamond coating portion.
2. A wafer carrier according to claim 1 wherein the diamond coating portion adheres to the base portion.
3. A wafer carrier according to claim 1 or claim 2 wherein the coating portion is applied by chemical vapor deposition.
4. A wafer carrier according to any one of the preceding claims wherein the carrier base portion is formed of a material having dimensional stability within the range of temperature ranges to which the carrier portion is exposed during processing of such wafers.
5. A wafer carrier according to claim 4 wherein the carrier base portion is formed of a high temperature material with a minimal coefficient of expansion within the temperature ranges to which the carrier portion is exposed during processing of such wafers.
6. A wafer carrier according to any one of the preceding claims wherein the carrier base portion is formed of a thermoplastic from the etherketone family.
7. A wafer carrier according to claim 6 wherein the carrier base portion is formed of a material selected from a group of materials comprising polyetheretherketone, polyaryletherketone, polyetherketoneketone and polyetherketone.
8. A wafer carrier according to any one of claims 1 to 5 wherein the carrier base portion is formed of a thermoset material.
9. A wafer carrier according to any one of claims 1 to 5 wherein the carrier base portion is formed of a material selected from a group comprising steel, polycarbonate, PES, polypropylene, polyethylene, and ABS.
10. A wafer carrier according to any one of the preceding claims wherein the diamond coating portion comprises a coating material selected from a group of materials comprising diamond, polycrystalline diamond, diamondlike carbon, amorphous diamond, hydrogenated diamond-like carbon, singLe crystal heteroepitaxial diamond.
11. A wafer carrier according to any one of the preceding claims wherein the carrier base portion is formed of a material different than the diamond coating portion.
12. A wafer carrier according to claim 11 wherein the carrier base portion comprises more than one material.
13. A wafer carrier according to claim 12 wherein the carrier base portion comprises a matrix of one material and discrete fragments of another material embedded therein.
14. A wafer carrier according to claim 12 wherein the carrier base portion comprises an insert portion of one material and confined within a jacket portion of another material.
15. A wafer carrier according to any one of the preced ing claims, wherein the diamond coating has a thickness in the range 0.05pm to 1.5pm.
16. A wafer carrier substantially as described herein with reference to, and as shown in, Figs. 1 and 2 or Fig. 3, 4, 5, 6 or 7 of the accompanying drawings.
GB9214697A 1991-07-23 1992-07-10 Diamond coated carrier for carrying wafers requiring chemical processing Withdrawn GB2257986A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73479491A 1991-07-23 1991-07-23

Publications (2)

Publication Number Publication Date
GB9214697D0 GB9214697D0 (en) 1992-08-19
GB2257986A true GB2257986A (en) 1993-01-27

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Family Applications (1)

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GB9214697A Withdrawn GB2257986A (en) 1991-07-23 1992-07-10 Diamond coated carrier for carrying wafers requiring chemical processing

Country Status (6)

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JP (1) JPH05198664A (en)
KR (1) KR930003300A (en)
DE (1) DE4223326A1 (en)
FR (1) FR2679524A1 (en)
GB (1) GB2257986A (en)
IT (1) IT1257386B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2324413A (en) * 1997-04-16 1998-10-21 Fluoroware Inc Composite wafer carrier
WO2012038118A1 (en) * 2010-09-23 2012-03-29 Evonik Degussa Gmbh Use of diamond-like carbon layers for the application of semiconductor inks free of metal ions

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300205A1 (en) * 1993-01-07 1994-07-14 Deutsche Bundespost Telekom Mounting for substrates in cassette form
JP3282584B2 (en) * 1998-06-02 2002-05-13 信越ポリマー株式会社 Storage container for precision parts
JP2002046793A (en) * 2000-04-26 2002-02-12 Asahi Glass Co Ltd Optical member storage case
DE10149037A1 (en) * 2001-10-05 2003-04-24 Infineon Technologies Ag Wafer rack for receiving and transporting wafers for semiconductor technology processing, comprises two opposing housing plates connected by lateral slats
DE10215283B4 (en) * 2002-04-05 2004-06-03 Astec Halbleitertechnologie Gmbh Device for receiving substrates
JP4616086B2 (en) * 2005-06-14 2011-01-19 東芝物流株式会社 Panel-shaped article storage tray
CN111270218B (en) * 2020-01-23 2021-07-06 电子科技大学 Preparation method of chemical vapor deposition carbon-modified sheet FeSiAl alloy
EP3929969B1 (en) * 2020-06-22 2023-12-06 Siltronic AG Method for manufacturing a process container for semiconductor workpieces and process container
EP4068343A1 (en) * 2021-04-01 2022-10-05 Siltronic AG Device for transporting semiconductor wafers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2109012A (en) * 1981-10-21 1983-05-25 Rca Corp Novel and improved diamond like film and process for producing same
US4872554A (en) * 1987-07-02 1989-10-10 Fluoroware, Inc. Reinforced carrier with embedded rigid insert
JPH01259172A (en) * 1988-04-09 1989-10-16 Idemitsu Petrochem Co Ltd Member colliding with powder or granule
JPH02186656A (en) * 1989-01-13 1990-07-20 Hitachi Ltd Low dust device

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Publication number Priority date Publication date Assignee Title
JPH01201095A (en) * 1988-02-04 1989-08-14 Idemitsu Petrochem Co Ltd Diamond carbon film and production thereof
JP2816864B2 (en) * 1989-07-07 1998-10-27 大塚化学株式会社 Transfer wafer basket and storage case

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2109012A (en) * 1981-10-21 1983-05-25 Rca Corp Novel and improved diamond like film and process for producing same
US4872554A (en) * 1987-07-02 1989-10-10 Fluoroware, Inc. Reinforced carrier with embedded rigid insert
JPH01259172A (en) * 1988-04-09 1989-10-16 Idemitsu Petrochem Co Ltd Member colliding with powder or granule
JPH02186656A (en) * 1989-01-13 1990-07-20 Hitachi Ltd Low dust device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2324413A (en) * 1997-04-16 1998-10-21 Fluoroware Inc Composite wafer carrier
US6039186A (en) * 1997-04-16 2000-03-21 Fluoroware, Inc. Composite transport carrier
GB2324413B (en) * 1997-04-16 2002-05-29 Fluoroware Inc Composite transport carrier
WO2012038118A1 (en) * 2010-09-23 2012-03-29 Evonik Degussa Gmbh Use of diamond-like carbon layers for the application of semiconductor inks free of metal ions

Also Published As

Publication number Publication date
ITTO920613A1 (en) 1994-01-17
GB9214697D0 (en) 1992-08-19
ITTO920613A0 (en) 1992-07-17
FR2679524A1 (en) 1993-01-29
JPH05198664A (en) 1993-08-06
IT1257386B (en) 1996-01-15
DE4223326A1 (en) 1993-01-28
KR930003300A (en) 1993-02-24

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