GB2255230A - Semiconductor deep cavity device - Google Patents

Semiconductor deep cavity device

Info

Publication number
GB2255230A
GB2255230A GB9212940A GB9212940A GB2255230A GB 2255230 A GB2255230 A GB 2255230A GB 9212940 A GB9212940 A GB 9212940A GB 9212940 A GB9212940 A GB 9212940A GB 2255230 A GB2255230 A GB 2255230A
Authority
GB
United Kingdom
Prior art keywords
wafer
substrate
aperture
bond
apertured sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9212940A
Other versions
GB9212940D0 (en
Inventor
Tony William James Rogers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
British Technology Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898929277A external-priority patent/GB8929277D0/en
Application filed by British Technology Group Ltd filed Critical British Technology Group Ltd
Priority to GB9212940A priority Critical patent/GB2255230A/en
Publication of GB9212940D0 publication Critical patent/GB9212940D0/en
Publication of GB2255230A publication Critical patent/GB2255230A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0076—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means
    • G01L9/0077—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light
    • G01L9/0079—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light with Fabry-Perot arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides, notably for optical addressability, a semiconductor deep cavity device comprising a relatively rigid optically transparent substrate bearing a semiconductor wafer, having interposed between the wafer and the substrate an apertured sheet of a glass, the aperture of which defines the device cavity. The invention also provides a method of making such a device, comprising placing the apertured sheet and the wafer in their relative positions and applying an electrostatic field between them sufficient to bond them, and (previously, simultaneously or subsequently) placing the substrate and the apertured sheet in their relative positions and applying an electrostatic field between them sufficient to bond them, the bonding being accomplished using field-assisted bonding at an elevated temperature. The wafer may be formed with an annular trench in its surface facing the substrate, with the boundary of the aperture of the interposed glass sheet substantially coinciding with that of the trench.
GB9212940A 1989-12-28 1992-06-18 Semiconductor deep cavity device Withdrawn GB2255230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9212940A GB2255230A (en) 1989-12-28 1992-06-18 Semiconductor deep cavity device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB898929277A GB8929277D0 (en) 1989-12-28 1989-12-28 Semiconductor deep cavity device
PCT/GB1990/002034 WO1991010119A2 (en) 1989-12-28 1990-12-28 Semiconductor deep cavity device
GB9212940A GB2255230A (en) 1989-12-28 1992-06-18 Semiconductor deep cavity device

Publications (2)

Publication Number Publication Date
GB9212940D0 GB9212940D0 (en) 1992-08-26
GB2255230A true GB2255230A (en) 1992-10-28

Family

ID=26296439

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9212940A Withdrawn GB2255230A (en) 1989-12-28 1992-06-18 Semiconductor deep cavity device

Country Status (1)

Country Link
GB (1) GB2255230A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0196784A2 (en) * 1985-03-14 1986-10-08 Imperial Chemical Industries Plc Fabry Perot pressure sensor with diaphragm
GB2202936A (en) * 1987-03-31 1988-10-05 Plessey Co Plc Optical fibre pressure or displacement sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0196784A2 (en) * 1985-03-14 1986-10-08 Imperial Chemical Industries Plc Fabry Perot pressure sensor with diaphragm
GB2202936A (en) * 1987-03-31 1988-10-05 Plessey Co Plc Optical fibre pressure or displacement sensor

Also Published As

Publication number Publication date
GB9212940D0 (en) 1992-08-26

Similar Documents

Publication Publication Date Title
KR102149305B1 (en) Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding
US5972154A (en) Methods of dicing flat workpieces
EP0663689A3 (en) Diffusion process for integrated circuits
TW366599B (en) Optoelectronic converter and its manufacturing method
SG53191G (en) Film for machining wafers
EP0331336A3 (en) Method of making an article comprising an opto-electronic device and an optical waveguide coupled thereto
ATE231287T1 (en) METHOD FOR ANODIC BONDING USING LIGHT RADIATION
US5178319A (en) Compression bonding methods
WO2003023460A3 (en) Glass bonded fiber array and method for the fabrication thereof
FR2491259B1 (en) SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
DK407884A (en) SELF-COMPENSATING HYDROSTATIC FLATS OF SEMICONDUCTOR SUBSTRATES
ATE301696T1 (en) METHOD FOR BONDING SUBSTRATES USING A LIGHT-ACTIVATABLE ADHESIVE FILM
SE9000245L (en) SEMICONDUCTOR COMPONENT AND PROCEDURE FOR ITS PREPARATION
GB2255230A (en) Semiconductor deep cavity device
WO1991010119A3 (en) Semiconductor deep cavity device
MY126494A (en) Method and apparatus for bonding optical disk substrate
WO2002035579A3 (en) Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
KR100383383B1 (en) Method for fabricating optical fiber block
ATE254316T1 (en) DEVICE AND PRODUCTION METHOD WITH AT LEAST ONE CHIP ON A CARRIER
EP1202342A3 (en) Semiconductor device and manufacturing method thereof
WO2003009967A1 (en) Polishing jig, conveyor tray, conveying method and conveying device
EP1378777A3 (en) Optical waveguide device, manufacturing method thereof, and optical communication apparatus
JPH09171977A (en) Substrate dividing method
TW324835B (en) Method for mountong semiconductor
JPH01101386A (en) Bonding of wafer

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)