GB2253739B - Mircomechanical sensors - Google Patents

Mircomechanical sensors

Info

Publication number
GB2253739B
GB2253739B GB9203292A GB9203292A GB2253739B GB 2253739 B GB2253739 B GB 2253739B GB 9203292 A GB9203292 A GB 9203292A GB 9203292 A GB9203292 A GB 9203292A GB 2253739 B GB2253739 B GB 2253739B
Authority
GB
United Kingdom
Prior art keywords
sensor element
sensors
silicon sensor
substrate
mircomechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9203292A
Other languages
English (en)
Other versions
GB2253739A (en
GB9203292D0 (en
Inventor
Rolf Becker
Klaus Jaeckel
Jiri Marek
Frank Bantien
Helmut Baumann
Kurt Weiblen
Martin Willmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB9203292D0 publication Critical patent/GB9203292D0/en
Publication of GB2253739A publication Critical patent/GB2253739A/en
Application granted granted Critical
Publication of GB2253739B publication Critical patent/GB2253739B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
GB9203292A 1991-03-09 1992-02-17 Mircomechanical sensors Expired - Fee Related GB2253739B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4107658A DE4107658A1 (de) 1991-03-09 1991-03-09 Montageverfahren fuer mikromechanische sensoren

Publications (3)

Publication Number Publication Date
GB9203292D0 GB9203292D0 (en) 1992-04-01
GB2253739A GB2253739A (en) 1992-09-16
GB2253739B true GB2253739B (en) 1995-07-19

Family

ID=6426916

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9203292A Expired - Fee Related GB2253739B (en) 1991-03-09 1992-02-17 Mircomechanical sensors

Country Status (4)

Country Link
US (1) US5273939A (enExample)
JP (1) JPH0575176A (enExample)
DE (1) DE4107658A1 (enExample)
GB (1) GB2253739B (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002252A (en) * 1991-05-22 1999-12-14 Wolff Controls Corporation Compact sensing apparatus having transducer and signal conditioner with a plurality of mounting pins
JP2533272B2 (ja) * 1992-11-17 1996-09-11 住友電気工業株式会社 半導体デバイスの製造方法
FR2686191B1 (fr) * 1993-02-23 1994-10-28 Sextant Avionique Montage de micro-capteur.
DE9314084U1 (de) * 1993-09-17 1994-01-05 Mannesmann Kienzle Gmbh, 78052 Villingen-Schwenningen Anordnung zum Befestigen eines mikromechanischen Sensors auf einem Träger durch Kleben
DE4342890A1 (de) * 1993-12-16 1995-06-22 Mannesmann Kienzle Gmbh Verfahren zum Abdichten herstellprozeßbedingter Öffnungen an mikromechanischen Beschleunigungssensoren
US5520054A (en) * 1994-03-29 1996-05-28 Rosemount Inc. Increased wall thickness for robust bond for micromachined sensor
US5659195A (en) * 1995-06-08 1997-08-19 The Regents Of The University Of California CMOS integrated microsensor with a precision measurement circuit
US5770465A (en) * 1995-06-23 1998-06-23 Cornell Research Foundation, Inc. Trench-filling etch-masking microfabrication technique
US6346811B1 (en) 1997-10-20 2002-02-12 Wolff Controls Corp. Methods for mounting a sensor and signal conditioner to form sensing apparatus having enhanced sensing capabilities and reduced size
US5945605A (en) * 1997-11-19 1999-08-31 Sensym, Inc. Sensor assembly with sensor boss mounted on substrate
DE19800574B4 (de) * 1998-01-09 2013-11-14 Robert Bosch Gmbh Mikromechanisches Bauelement
US6143583A (en) * 1998-06-08 2000-11-07 Honeywell, Inc. Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
JP2003510192A (ja) * 1999-09-28 2003-03-18 ハネウェル・インターナショナル・インコーポレーテッド 溶解ウェーハ製造プロセス、およびスペーシング・メサを持つ支持基板を有する関連マイクロ電気機械デバイス
US20020167312A1 (en) * 2001-05-01 2002-11-14 Marshall E. Smith Compact sensing apparatus having an orthogonal sensor and methods for forming same
US6787897B2 (en) * 2001-12-20 2004-09-07 Agilent Technologies, Inc. Wafer-level package with silicon gasket
JP4392246B2 (ja) * 2002-02-06 2009-12-24 アナログ・デバイスズ・インク マイクロ加工されたジャイロスコープ
US7089792B2 (en) * 2002-02-06 2006-08-15 Analod Devices, Inc. Micromachined apparatus utilizing box suspensions
US6946742B2 (en) * 2002-12-19 2005-09-20 Analog Devices, Inc. Packaged microchip with isolator having selected modulus of elasticity
US20040041254A1 (en) * 2002-09-04 2004-03-04 Lewis Long Packaged microchip
US6768196B2 (en) * 2002-09-04 2004-07-27 Analog Devices, Inc. Packaged microchip with isolation
US7166911B2 (en) 2002-09-04 2007-01-23 Analog Devices, Inc. Packaged microchip with premolded-type package
US20050056870A1 (en) * 2002-12-19 2005-03-17 Karpman Maurice S. Stress sensitive microchip with premolded-type package
JP4516113B2 (ja) 2004-04-14 2010-08-04 アナログ デバイシス， インコーポレイテッド 慣性センサのためのカップリング装置
US7478557B2 (en) 2004-10-01 2009-01-20 Analog Devices, Inc. Common centroid micromachine driver
EP1847025A2 (en) 2005-01-20 2007-10-24 BAE SYSTEMS Information and Electronic Systems Integration Inc. Microradio design, manufacturing method and applications for the use of microradios
US8160497B2 (en) 2005-01-20 2012-04-17 Bae Systems Information And Electronic Systems Integration Inc. Method of determining conditions on the ground using microradios
US7421897B2 (en) 2005-04-14 2008-09-09 Analog Devices, Inc. Cross-quad and vertically coupled inertial sensors
DE102005040789B4 (de) * 2005-08-29 2014-12-24 Robert Bosch Gmbh Herstellungsverfahren für ein Mikromechanisches Bauelement mit anodisch gebondeter Kappe
US8129801B2 (en) * 2006-01-06 2012-03-06 Honeywell International Inc. Discrete stress isolator attachment structures for MEMS sensor packages
JP4671874B2 (ja) * 2006-01-23 2011-04-20 シャープ株式会社 中継装置
US8344487B2 (en) 2006-06-29 2013-01-01 Analog Devices, Inc. Stress mitigation in packaged microchips
EP1944266A1 (en) * 2007-01-10 2008-07-16 Infineon Technologies SensoNor AS MEMS Packaging with reduced mechanical strain
US20080164546A1 (en) * 2007-01-10 2008-07-10 Infineon Technologies Sensonor As Design of MEMS Packaging
US20110304430A1 (en) 2007-07-30 2011-12-15 Bae Systems Information And Electronic Systems Integration Inc. Method of tracking a container using microradios
US7970357B2 (en) * 2007-07-30 2011-06-28 Bae Systems Information And Electronic Systems Integration Inc. Transponder with stabilized oscillator
US8260201B2 (en) * 2007-07-30 2012-09-04 Bae Systems Information And Electronic Systems Integration Inc. Dispersive antenna for RFID tags
DE102008043382B4 (de) * 2008-11-03 2017-01-19 Robert Bosch Gmbh Bauelement und Verfahren zu dessen Herstellung
WO2010134181A1 (ja) * 2009-05-21 2010-11-25 パナソニック電工株式会社 チップの実装構造、及びそれを備えたモジュール
EP2426083A3 (en) * 2010-09-03 2013-11-13 Domintech Co., LTD. Mems sensor package
CN102398885A (zh) * 2010-09-14 2012-04-04 利顺精密科技股份有限公司 微机电传感器装置
GB201200128D0 (en) 2012-01-05 2012-02-15 Atlantic Inertial Systems Ltd Strain decoupled sensor
US8803262B2 (en) * 2012-01-17 2014-08-12 Rosemount Aerospace Inc. Die attach stress isolation
DE102012215742A1 (de) * 2012-09-05 2014-03-06 Bundesdruckerei Gmbh Sicherheits- und/oder Wertprodukt
US9676614B2 (en) 2013-02-01 2017-06-13 Analog Devices, Inc. MEMS device with stress relief structures
CN104201168B (zh) * 2014-09-16 2017-01-25 山东华芯半导体有限公司 一种芯片倾斜堆叠的圆片级封装单元及封装方法
US10167189B2 (en) 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices
US9499393B2 (en) * 2015-02-06 2016-11-22 Mks Instruments, Inc. Stress relief MEMS structure and package
US10131538B2 (en) 2015-09-14 2018-11-20 Analog Devices, Inc. Mechanically isolated MEMS device
FR3042483B1 (fr) * 2015-10-16 2017-11-24 Thales Sa Microsysteme electromecanique et procede de fabrication
CN106371041A (zh) * 2016-10-10 2017-02-01 北京艾森博威科技发展有限公司 霍尔传感器及其组装方法
JP6926568B2 (ja) 2017-03-24 2021-08-25 セイコーエプソン株式会社 物理量センサー、電子機器および移動体
CN112444238A (zh) * 2019-08-16 2021-03-05 北京小米移动软件有限公司 加速度陀螺传感器
US11417611B2 (en) 2020-02-25 2022-08-16 Analog Devices International Unlimited Company Devices and methods for reducing stress on circuit components
US11981560B2 (en) 2020-06-09 2024-05-14 Analog Devices, Inc. Stress-isolated MEMS device comprising substrate having cavity and method of manufacture

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021026A1 (de) * 1979-07-03 1981-01-07 Licentia Patent-Verwaltungs-GmbH Halbleiter-Dioden-Anordnung
EP0022203A1 (de) * 1979-07-03 1981-01-14 Licentia Patent-Verwaltungs-GmbH Magnetisch steuerbarer Widerstand
GB2081973A (en) * 1980-08-05 1982-02-24 Itt Ind Ltd Hall effect device
EP0007596B1 (en) * 1978-07-21 1984-02-22 Hitachi, Ltd. Capacitive pressure sensor
US4881410A (en) * 1987-06-01 1989-11-21 The Regents Of The University Of Michigan Ultraminiature pressure sensor and method of making same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3113745A1 (de) * 1981-04-04 1982-10-21 Robert Bosch Gmbh, 7000 Stuttgart Duennschicht-dehnungsmessstreifen und verfahren zu seiner herstellung
JPS57177583A (en) * 1981-04-14 1982-11-01 Int Standard Electric Corp Holl effect device
US4670092A (en) * 1986-04-18 1987-06-02 Rockwell International Corporation Method of fabricating a cantilever beam for a monolithic accelerometer
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007596B1 (en) * 1978-07-21 1984-02-22 Hitachi, Ltd. Capacitive pressure sensor
EP0021026A1 (de) * 1979-07-03 1981-01-07 Licentia Patent-Verwaltungs-GmbH Halbleiter-Dioden-Anordnung
EP0022203A1 (de) * 1979-07-03 1981-01-14 Licentia Patent-Verwaltungs-GmbH Magnetisch steuerbarer Widerstand
GB2081973A (en) * 1980-08-05 1982-02-24 Itt Ind Ltd Hall effect device
US4881410A (en) * 1987-06-01 1989-11-21 The Regents Of The University Of Michigan Ultraminiature pressure sensor and method of making same

Also Published As

Publication number Publication date
US5273939A (en) 1993-12-28
GB2253739A (en) 1992-09-16
GB9203292D0 (en) 1992-04-01
DE4107658C2 (enExample) 1993-09-02
DE4107658A1 (de) 1992-09-17
JPH0575176A (ja) 1993-03-26

Similar Documents

Publication Publication Date Title
GB2253739B (en) Mircomechanical sensors
EP0624900A3 (en) Method for micromachining a sensor integrated into the surface of a silicon body.
FI950715L (fi) Pintamikromekaaninen, symmetrinen paine-eroanturi
AU5744394A (en) Force sensor assembly for pressure measurement for pump
DE69210041D1 (de) Entwurf von piezoresistivem drucksensor aus silizium
EP0614087A3 (en) Piezoelectric vibrator and acceleration sensor using this.
EP0710826A3 (en) High pressure sensor structure and method
DE69310260D1 (de) Integrierter Winkelbeschleunigungsmesser mit kapazitiven Gebern
DE59403558D1 (de) Kapazitiver Drucksensor bzw. kapazitiver Differenzdrucksensor
EP0631121A3 (en) Semiconductor voltage sensor with compensation for the input voltage of the wheatstone bridge circuit.
EP0672899A3 (en) Semiconductor pressure sensor with monocrystalline silicon membrane and single crystal strain gauges and its manufacturing process.
FR2820202B1 (fr) Capteur de pression et moteur de fusee l'incorporant
TW373612U (en) Fluid seal and speed sensor assembly
TW366417B (en) Integrated high-performance gas sensor and the manufacturing method
AU5373096A (en) Bearing assembly having integrated speed sensor
NO912663D0 (no) Fluidumsisolert selvkompenserende absolutt-trykks sensor-transducer.
EP0672898A3 (en) Semiconductor pressure transducer with polysilicon membrane and single crystal strain gauges and manufacturing process therefor.
EP0545319A3 (en) Semiconductor pressure sensor having double diaphragm structure
AU7552298A (en) Sensor and method for sensing the position of the surface of object, aligner provided with the sensor and method of manufacturing the aligner, and method of manufacturing devices by using the aligner
EP0237280A3 (en) Magnetic sensor
DE59303373D1 (de) Drucksensor
EP0677727A3 (en) Pressure transducer assembly and manufacturing process therefor.
EP0594182A3 (en) Anode bonding method and acceleration sensor obtained by using the anode bonding method
DE59104688D1 (de) Kraftsensor zur Erfassung von Kräften zwischen Bauteilen.
ZA88820B (en) Pressure sensor for determining high pressures in fluids or the like

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990217