GB2226700A - Resin encapsulated diodes - Google Patents

Resin encapsulated diodes Download PDF

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Publication number
GB2226700A
GB2226700A GB8929207A GB8929207A GB2226700A GB 2226700 A GB2226700 A GB 2226700A GB 8929207 A GB8929207 A GB 8929207A GB 8929207 A GB8929207 A GB 8929207A GB 2226700 A GB2226700 A GB 2226700A
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United Kingdom
Prior art keywords
diode
resistance
substrate
diode device
pins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8929207A
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GB8929207D0 (en
GB2226700B (en
Inventor
Kenji Tsugj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Publication date
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of GB8929207D0 publication Critical patent/GB8929207D0/en
Publication of GB2226700A publication Critical patent/GB2226700A/en
Application granted granted Critical
Publication of GB2226700B publication Critical patent/GB2226700B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01055—Cesium [Cs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12034—Varactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

4 2 _ (-.- -7 (2) (D DIODE DEVICE FOR HIGH FREQUENCY USE
BACKGROUND OF THE INVENTION Field of the Invention
The present invention relates to a device including a diode used especially for high-frequency signals. The device may be used, for example, in a tuner circuit of television receiver.
Description of the Prior Art
Fig. 7 shows an input stage of a typical tuner circuit I of a television receiver, in which a variable-capacitance diode 2 and a switching diode 3 are used. In order to protect those diodes 2 and 3 from an accidental failure due to overvoltages, resistances 4a and 4b (usually of 50-100 kQ are normally provided for the respective diodes 2 and 3. In the figure, C1, C__1 Cs and C.. are blocking capacitors, L3., L2 and L3 are tuning coils, numeral 5 denotes a dual gate MOS FET for RF amplification, numeral 6 denotes a bias resistance and C5 is a bypass capacitor.
Conventionally, discrete parts are used in constructing such a circuit, and the protection resistances 4a and 4b have been also provided separately: the resistances 4a and 4b are connected at one end to the diodes other end to the voltage input terminals 7 and 8. case, there must be some length of the lead diode 2, 3 and the resistance 4a, 4b, and stray capacitance 9 and 10 due to the lead, which may cause unintentional influences on the tuner characteristics 1 2 and 3 and at the In t h i s between the the the t)roblem is 11 SUMMARY OF THE INVENTION
Therefore, an object of the present invention is to provide a diode device with very small stray capacitance and suitable for high-frequency use.
Another object of the present invention is to provide a unit part in which a diode and its protection resistance are integrally combined.
According to one feature of this invention, a diode device suitable for high-frequency use comprises: a diode; a resistance connected to a terminal of the diode for protecting the diode from an overvoltage; a resin package for molding and fixing the diode and the resistance; and a plurality of terminal members each being semi-molded in the resin package for connecting the terminals of the diode and resistance to the outside of the diode device.
According to another feature of this invention, a diode device suitable for high-frequency use comprises: a diode formed by a semiconductor substrate and a semiconductor region having a conductivity type opposite to the substrate and embedded in the substrate; a resistance placed on the substrate via an insulation layer having a contact with the substrate through a hole formed in the insulation laye. for protecting the diode from an overvoltage; a first and second terminal members connected to the terminals of the diode; a third terminal member connected to the resistance; and a resin package for molding and fixing the diode, the resistance and the terminal members.
2 Since a diode and its protection resistance are integrated and molded into a unit part in the above features, the lead between them is very short, yielding negligible stray capacitance and giving high adaptability to high-frequency use. The unit device is also advantageous in handling and in manufacturing application circuits such as a television tuner.
BRIEF DESCRIPTION OF THE ATTACHED DRAWINGS
These and other objects and features of this invention will become clear from the following description taken in conjunction with the preferred embodiments with reference to the accompanied drawings in which:
Fig. la is an illustrative plan view of a diode device embodying the feature of the present invention, Fig. lb is a cross-sectional view taken along the line B-B of Fig. la, Fig. 2 is a perspective view of the diode device, Fig. 3 is the circuit diagram of the diode device, Fig. 4 is a cross-sectional view of the main part of the diode device, Fig. 5 is an illustrative plan view of of the present invention, 6 is an illustrative plan view of of the present invention, and 7 is a circuit diagram of a tuner embodiment Fig. embodiment F i g. t e 1 e v i s i o n receiver.
3 the second the t h i r d o f a VHF DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The device shown in Figs. la, lb, and 2 is the first embodiment of the present invention in which a protection resistance 4' is placed on a diode chip 12 which is mounted on one 11 of the three pins 11, 13 and 14 of the device. As shown in Fig. 3, the pin 11 is used for the cathode of the diode 12, another pin 13 is connected to the anode via an inner lead wire 16, and the third pin 14 is to the resistance 4' via another inner lead wire 17, all of which are molded and fixed with resin 15. The pins 11, 13 and 14 are made from a leadframe and separated after molding.
The diode chip 12 integrated with the protection resistance-4' is constructed as shown in Fig. 4. The diode 12 is formed by an N-type silicon substrate 18 and a P-type region 19 embedded in it. Then an insulation layer 21 is formed covering the N-type substrate surface with a through hole 24 for a polysilicon layer doped with impurities (the resistance) 4' to reach the substrate 18. On the P-type region (anode of the diode) 19 is placed a metal (preferably, but not limited to, aluminum) terminal 22, and on the polysilicon layer (resistance) 4' is placed another metal terminal 23. The back of the N-type silicon substrate 18 is coated with a vapor-plated gold 24, which contacts the cathode pin 11. The metal terminals 22 and 23 are- bonded with the wires 16 and 17 to connect to the other two pins 13 and 14. The molding resin is preferred to be chosen from those having less high-frequency dielectric loss. Fig. 5 shows the second embodiment of the present 4 invention, in which the resistance 4' is formed, independent from the the diode 12, on the third pin 14. The resistance 4' may be formed by vapor plating on the pin 14, or otherwise. The third embodiment is shown in Fig. 6, in which the connection wire 17 between the diode 12 and the third pin 14 is formed by a high-resistance wire to work as the protection resistance.
Obviously, many modifications and variations of the present invention are possible in light of the above teachings. It is therefore to be understood that within the scope of the appended claims, the invention may be practiced other than as specifically described.

Claims (9)

WHAT IS CLAIMED IS:
1. A diode device suitable for high-frequency use comprising:
a diode; a resistance connected to a terminal of the diode for protecting the diode from an overvoltage; a resin package for molding and fixing the diode and the resistance; and a plurality of terminal members each being semi-molded in the resin package for connecting the terminals of the diode and resistance to the outside of the diode device.
2. The diode device according to claim 1, where diode is a switching diode.
3. The diode device according to claim 1, where the diode is a variablecapacitance diode.
4. The diode device according to claim 1, where the terminal members are pins made from a leadframe, and inner wires connecting the diode and the pins are molded in the resin package.
5. The diode device according to claim 4, where resistance is mounted on one of the pins.
the
6. The diode device according to claim 4, where the wire connecting the diode and one of the pins is formed by a 6 Y 7 high-resistance wire working as the resistance.
7. The diode device according to claim 1, where the resistance is integrally formed on a semiconductor substrate of the diode.
8. A diode device suitable for high-frequency use comprising: a diode formed by a semiconductor substrate and a semiconductor region having a conductivity type opposite to the substrate and embedded in the substrate; a resistance placed on the substrate via an insulation layer having a contact with the substrate through a hole formed in the insulation layer for protecting the diode from an overvoltage; a first and second terminal members connected to the terminals of the diode; a third terminal member connected to the resistance; and 20 a resin package for molding and fixing the diode, the resistance and the terminal members.
9. A diode device substantially as described herewith with reference to the drawings.
nff,,!,R state House. 66,71 High Hol oorn. London WC1R 4TP. Further coples maybe obtained from The Patent Office-
GB8929207A 1988-12-27 1989-12-27 Encapsulated diode and protective resistance Expired - Fee Related GB2226700B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988170574U JPH0289854U (en) 1988-12-27 1988-12-27

Publications (3)

Publication Number Publication Date
GB8929207D0 GB8929207D0 (en) 1990-02-28
GB2226700A true GB2226700A (en) 1990-07-04
GB2226700B GB2226700B (en) 1993-02-17

Family

ID=15907361

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8929207A Expired - Fee Related GB2226700B (en) 1988-12-27 1989-12-27 Encapsulated diode and protective resistance

Country Status (4)

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JP (1) JPH0289854U (en)
DE (1) DE3943013C2 (en)
GB (1) GB2226700B (en)
SG (1) SG59493G (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2027146B1 (en) * 2020-12-17 2022-07-11 Ampleon Netherlands Bv A radiofrequency power package and device with improved ESD performance

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10032389A1 (en) * 2000-07-06 2002-01-17 Philips Corp Intellectual Pty Radio or television signal receiver has high frequency circuit comprising discrete semiconductor device with planar varicap diode and integrated pre-resistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047411A (en) *
EP0035331A2 (en) * 1980-02-29 1981-09-09 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device
GB2086134A (en) * 1980-09-22 1982-05-06 Hitachi Ltd Resin encapsulated electronic devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5393781A (en) * 1977-01-27 1978-08-17 Toshiba Corp Semiconductor device
DE3522652A1 (en) * 1985-06-25 1987-01-08 Blaupunkt Werke Gmbh CIRCUIT ARRANGEMENT FOR TUNING RECEIVERS
DE3736548A1 (en) * 1986-10-30 1988-05-05 Toko Inc ELECTRONIC TUNING CIRCUIT FOR AN AM RECEIVER

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047411A (en) *
EP0035331A2 (en) * 1980-02-29 1981-09-09 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device
GB2086134A (en) * 1980-09-22 1982-05-06 Hitachi Ltd Resin encapsulated electronic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2027146B1 (en) * 2020-12-17 2022-07-11 Ampleon Netherlands Bv A radiofrequency power package and device with improved ESD performance

Also Published As

Publication number Publication date
DE3943013A1 (en) 1990-06-28
GB8929207D0 (en) 1990-02-28
GB2226700B (en) 1993-02-17
JPH0289854U (en) 1990-07-17
DE3943013C2 (en) 1994-12-22
SG59493G (en) 1993-07-09

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20021227