GB2210199B - Semiconductor device for an optical control circuit - Google Patents

Semiconductor device for an optical control circuit

Info

Publication number
GB2210199B
GB2210199B GB8822067A GB8822067A GB2210199B GB 2210199 B GB2210199 B GB 2210199B GB 8822067 A GB8822067 A GB 8822067A GB 8822067 A GB8822067 A GB 8822067A GB 2210199 B GB2210199 B GB 2210199B
Authority
GB
United Kingdom
Prior art keywords
control circuit
semiconductor device
optical control
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8822067A
Other languages
English (en)
Other versions
GB2210199A (en
GB8822067D0 (en
Inventor
Shigeaki Tomonari
Keizi Kakite
Jun Sakai
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Matsushita Electric Works Ltd filed Critical Agency of Industrial Science and Technology
Publication of GB8822067D0 publication Critical patent/GB8822067D0/en
Publication of GB2210199A publication Critical patent/GB2210199A/en
Application granted granted Critical
Publication of GB2210199B publication Critical patent/GB2210199B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications
    • Y10S136/293—Circuits
GB8822067A 1987-09-24 1988-09-20 Semiconductor device for an optical control circuit Expired - Lifetime GB2210199B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62239169A JPS6481522A (en) 1987-09-24 1987-09-24 Optical control circuit and semiconductor device constituting said circuit

Publications (3)

Publication Number Publication Date
GB8822067D0 GB8822067D0 (en) 1988-10-19
GB2210199A GB2210199A (en) 1989-06-01
GB2210199B true GB2210199B (en) 1992-04-29

Family

ID=17040756

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8822067A Expired - Lifetime GB2210199B (en) 1987-09-24 1988-09-20 Semiconductor device for an optical control circuit

Country Status (4)

Country Link
US (1) US4916323A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6481522A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3832463A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2210199B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223446A (en) * 1988-11-30 1993-06-29 Sharp Kabushiki Kaisha Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film
JPH0748559B2 (ja) * 1988-11-30 1995-05-24 シャープ株式会社 半導体装置
JP2890441B2 (ja) * 1989-02-23 1999-05-17 工業技術院長 半導体装置
DE4005835C2 (de) * 1989-02-23 1996-10-10 Agency Ind Science Techn Verfahren zum Betrieb eines photoelektrischen Wandlers und photoelektrischen Wandler zur Durchführung des Verfahrens
US5151602A (en) * 1990-02-15 1992-09-29 Matsushita Electric Works, Ltd. Semiconductor relay circuit using photovoltaic diodes
US5146100A (en) * 1991-05-21 1992-09-08 Keithley Instruments, Inc. High voltage solid-state switch with current limit
AU648682B2 (en) * 1991-08-14 1994-04-28 P J Edwards Multiple-beam quantum noise-correlated lightwave system
US5278422A (en) * 1991-09-02 1994-01-11 Matsushita Electric Works, Ltd. Normally open solid state relay with minimized response time of relay action upon being turned off
DE4206393C2 (de) * 1992-02-29 1995-05-18 Smi Syst Microelect Innovat Halbleiterrelais und Verfahren zu seiner Herstellung
US5221847A (en) * 1992-06-26 1993-06-22 At&T Bell Laboratories Break-before-make control for form C solid-state relays with current limiter bypass
US5549762A (en) * 1995-01-13 1996-08-27 International Rectifier Corporation Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers
US6037602A (en) * 1998-02-13 2000-03-14 C.P. Clare Corporation Photovoltaic generator circuit and method of making same
US5969581A (en) * 1998-05-28 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Opto-electronically controlled RF waveguide
US8410568B2 (en) * 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates
CN108022559B (zh) * 2018-01-03 2020-01-21 上海中航光电子有限公司 一种光敏检测模块、光源模组与电泳显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154820A (en) * 1984-01-23 1985-09-11 Int Rectifier Corp Photovoltaic relay
GB2194389A (en) * 1986-08-20 1988-03-02 Agency Ind Science Techn Optical control circuit and semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138229A (ja) * 1974-09-30 1976-03-30 Hitachi Metals Ltd Haigasukaishukyokyuhoho oyobi sonosochi
US4307298A (en) * 1980-02-07 1981-12-22 Bell Telephone Laboratories, Incorporated Optically toggled bilateral switch having low leakage current
JPS5772369A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Semiconductor device building in light receiving element
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
JPS6215924A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Works Ltd 半導体リレ−回路
US4801822A (en) * 1986-08-11 1989-01-31 Matsushita Electric Works, Ltd. Semiconductor switching circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154820A (en) * 1984-01-23 1985-09-11 Int Rectifier Corp Photovoltaic relay
GB2184602A (en) * 1984-01-23 1987-06-24 Int Rectifier Corp Photovoltaic isolator
GB2194389A (en) * 1986-08-20 1988-03-02 Agency Ind Science Techn Optical control circuit and semiconductor device

Also Published As

Publication number Publication date
DE3832463A1 (de) 1989-04-13
GB2210199A (en) 1989-06-01
GB8822067D0 (en) 1988-10-19
JPS6481522A (en) 1989-03-27
US4916323A (en) 1990-04-10
DE3832463C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020920