GB2191633B - Radiation hardened semiconductor devices - Google Patents

Radiation hardened semiconductor devices

Info

Publication number
GB2191633B
GB2191633B GB8713523A GB8713523A GB2191633B GB 2191633 B GB2191633 B GB 2191633B GB 8713523 A GB8713523 A GB 8713523A GB 8713523 A GB8713523 A GB 8713523A GB 2191633 B GB2191633 B GB 2191633B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
radiation hardened
hardened semiconductor
radiation
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8713523A
Other versions
GB8713523D0 (en
GB2191633A (en
Inventor
Kamal Tabatabaie-Alavi
Bruce W Black
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB8713523D0 publication Critical patent/GB8713523D0/en
Publication of GB2191633A publication Critical patent/GB2191633A/en
Application granted granted Critical
Publication of GB2191633B publication Critical patent/GB2191633B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
GB8713523A 1986-06-11 1987-06-10 Radiation hardened semiconductor devices Expired - Fee Related GB2191633B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87298486A 1986-06-11 1986-06-11

Publications (3)

Publication Number Publication Date
GB8713523D0 GB8713523D0 (en) 1987-07-15
GB2191633A GB2191633A (en) 1987-12-16
GB2191633B true GB2191633B (en) 1990-02-14

Family

ID=25360747

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8713523A Expired - Fee Related GB2191633B (en) 1986-06-11 1987-06-10 Radiation hardened semiconductor devices

Country Status (4)

Country Link
JP (1) JPS62298177A (en)
DE (1) DE3719535A1 (en)
FR (1) FR2606552B1 (en)
GB (1) GB2191633B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253957A (en) * 1988-04-04 1989-10-11 Agency Of Ind Science & Technol Gallium arsenide semiconductor memory integrated circuit
FR2667442B1 (en) * 1989-10-23 1995-02-10 Commissariat Energie Atomique SEMICONDUCTORS FOR HIGH-RESISTANCE MICROELECTRONIC COMPONENTS AGAINST IONIZING RADIATION.
WO2003041167A1 (en) * 2001-11-05 2003-05-15 Mitsumasa Koyanagi Semiconductor device comprising low dielectric material film and its production method
CN111291480A (en) * 2020-01-21 2020-06-16 中国科学院微电子研究所 Modeling method and device for MOS device dose rate model

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005059A2 (en) * 1978-04-24 1979-10-31 Western Electric Company, Incorporated A semiconductor device having a layered structure and a method of making it
EP0029481A1 (en) * 1979-11-26 1981-06-03 International Business Machines Corporation Field effect semiconductor structure
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
JPS58107679A (en) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp Field effect transistor
JPS5963769A (en) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol High-speed semiconductor element
JPS61289673A (en) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd Compound semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005059A2 (en) * 1978-04-24 1979-10-31 Western Electric Company, Incorporated A semiconductor device having a layered structure and a method of making it
EP0029481A1 (en) * 1979-11-26 1981-06-03 International Business Machines Corporation Field effect semiconductor structure
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer

Also Published As

Publication number Publication date
FR2606552B1 (en) 1991-08-23
GB8713523D0 (en) 1987-07-15
GB2191633A (en) 1987-12-16
JPS62298177A (en) 1987-12-25
DE3719535A1 (en) 1988-01-28
FR2606552A1 (en) 1988-05-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930610