GB2084796A - Mounting and cooling arrangements for semiconductor devices - Google Patents

Mounting and cooling arrangements for semiconductor devices Download PDF

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Publication number
GB2084796A
GB2084796A GB8128041A GB8128041A GB2084796A GB 2084796 A GB2084796 A GB 2084796A GB 8128041 A GB8128041 A GB 8128041A GB 8128041 A GB8128041 A GB 8128041A GB 2084796 A GB2084796 A GB 2084796A
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United Kingdom
Prior art keywords
heat
semiconductor device
pellet
semiconductor
main surface
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GB8128041A
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GB2084796B (en
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Hitachi Ltd
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Hitachi Ltd
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Publication of GB2084796A publication Critical patent/GB2084796A/en
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Publication of GB2084796B publication Critical patent/GB2084796B/en
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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Abstract

A mounting and cooling arrangement for a semiconductor pellet (6) comprises an external lead (19) having a paddle-like segment (5) to which a main surface of the semiconductor pellet is adhered with electrical contact; further external leads (20,21) which are electrically connected (22) to another main surface of the semiconductor pellet; a heat-radiating member (2) made of a metal; an insulator (28) interposed between the paddle-like segment (5) and the heat-radiating member (2) to electrically insulate them from each other; and a sealing member (10) for sealing the semiconductor pellet, the paddle- like segment and the insulating member. This arrangement obviates the need for a separate insulating mica plate when the member (2) is bolted to a heat sink. Various other ways of achieving insulation between the semiconductor pellet and the heat-radiating member are also disclosed. <IMAGE>

Description

SPECIFICATION Semiconductor devices, process for producing the same, and electronic circuit devices using the semiconductor devices Background of the Invention The present invention relates to semiconductor devices, a process for producing the semiconductor devices, and circuit devices employing the semiconductor devices.
The semiconductor devices contemplated by the present invention are particularly directed to semiconductor devices having a heat-radiating member, such as power transistors or power IC's (integrated circuits).
In the power transistors used in practical applications at the present time, a heat-radiating member such as heat sink or flange is formed in a portion of the transistor case (package) in order to increase the heat radiation characteristics of a semiconductor pellet. The semiconductor pellet is adhered directly to the heat-radiating member such as heat sink or flange, so when the power transistor is operated the heat generated by the semiconductor pellet is radiated into the open air through the heat-radiating member.
In the above-mentioned power transistor, furthermore, the heat-radiating characteristics are improved by adhering the semiconductor pellet in electrical contact with the heat-radiating member. The heat-radiating member then also serves as an electrode or an external lead of the transistor.
In mounting the transistor of this type, it is accepted practice to interpose an insulating plate 15 such as a mica plate between a flange 2 of the power transistor 1 and a metallic heat-radiating plate (mounting substrate) 11 as shown in Fig. 1. An insulating washer 16 is fitted to the mounting hole 2a of the flange 2, and the flange 2 and the heatradiating plate 11 are fastened together by a bolt 17 so the transistor 1 is electrically insulated from the heat-radiating plate 11 it is mounted on.
With the above-mentioned method, however, the large number of parts such as insulating plates 15, insulating washers 16 and the like, make the mounting operation very complicated. Furthermore, when mica is used for the insulating plate 15, the dielectric breakdown voltage is about 1200 volts at the greatest. Use of an insulating plate 15 having increased thickness to increase the dielectric breakdown voltage, on the other hand, decreases the heat-radiating performance due to the thick insulating plate 15. Moreover, the insulating plate made of mica has such poor mechanical strength that it is often broken when the transistor 1 is mounted, and loses its inusulating properties. Furthermore, with the above-mentioned mounting method, the insulating plate or the insulating washer may be broken while the device is being used, or deteriorate with time, to lose its insulating property.
In order to preclude the above-mentioned problems, British Patent Specificaion No.
1,365,658 teaches a resin-sealed semiconductor device in which an insulating plate is interposed between the semiconductor pellet and the heat-radiating member.
According to the resin-sealed semiconductor device disclosed in this patent specification, however, the insulating plate has a size which is sufficiently greater than the semiconductor pellet to support all of the external electrode leads. Therefore, the heat generated by the seniiconductor pellet is not sufficiently radiated.
One aspect of the present invention provides a semiconductor device comprising:~ a semiconductor pellet; an external lead having a paddle-like segment to which a main surface of the semiconductor pellet is adhered with electrical contact; another external lead which is electrically connected to another main surface of the semiconductor pellet; a heat-radiating member made of a metal; an insulator interposed between the paddlelike segment and the heat-radiating member to electrically insulate them from each other; and a sealing member for sealing the semiconductor pellet, the paddle-like segment and the insulating member. to which is a main surface of the semiconductor pellet is adhered with electrical contact; another external lead which is electrically connected to another main surface of the semiconductor pellet; a a heat-radiating member made of a metal; an insulator interposed between the paddlelike segment and the heat-radiating member to electrically insulate them from each other; and a a sealing member for sealing the semiconductor pellet, the paddle-like segment and the insulating member.
Further, one electronic circuit device according to the present invention consists of the above semiconductor device and a heat-radiating plate (mounting substrate) made of a metal, in which the heat-radiating member of the semiconductor device is fastened directly onto the metal heat-radiating plate.
Brief Description of the Drawings Figure 1 is a section view showing a portion of a conventional electronic circuit device in which a power transistor is mounted on a metallic substrate; Figure 2 is a perspective view of a power transistor according to an embodiment of the present invention; Figure 3 is a section view showing the power transistor of Fig. 2 on an enlarged scale; Figure 4 is a perspective view of the power transistor according to another embodiment of the present invention; Figure 5 is a section view showing the power transistor of Fig. 4 on an enlarged scale; Figures 6 to 11 are section views of power transistors according to further embodiments of the present invention; Figure 12 is a perspective view of a lead frame which is used for obtaining a power transistor according to yet another embodiment of the present invention;; Figures 13 and 14 are section views illustrating the steps for obtaining a power transistor using the lead frame shown in Fig. 12; Figures 15 and 16 are perspective views showing the appearances of power transistors to which the present invention is applied; Figure 17 is a diagram of an equivalent circuit of the power transistor of the present invention; Figures 18 and 19 are section views showing composite power transistors in accordance with modified embodiments of the present invention; Figure 20 is a diagram of an equivalent circuit of the composite power transistor of Fig. 18; Figure 21 is a diagram of an equivalent circuit of the composite power transistor of Fig. 19; Figure 22(A) is a section view showing on an enlarged scale a power transistor according to still another embodiment of the present invention;; Figure 22(B) is a plan view of an insulating plate which is used for the power transistor shown in Fig. 22(A); Figure 23 is a section view showing on an enlarged scale a power transistor according to a further embodiment of the present invention; Figures 24 to 30 are section views showing power transistors according to modified embodiments of the present invention; Figure 31 is a diagram of characteristics which represent the index of thermal resistance; Figures 32 to 34 are side views showing the appearances of electronic circuit devices employing the power transistor of the present invention; Figure 35 is a diagram of an equivalent circuit of the electronic circuit device shown in Fig. 34; Figure 36(A) is a section view schematically illustrating a power transistor of the present invention;; Figure 36(B) is a diagram of an equivalent circuit of the power transistor of Fig. 36(A); Figure 37(A) is a section view schematically illustrating another power transistor of the present invention; Figure 37(B) is a diagram of an equivalent circuit of the power transistor shown in Fig.
37(A); and Figures 38(A), 38(B) and 38(C) are circuit diagrams of electronic circuit devices employing the power transistors of the present invention.
Description of the Preferred Embodiments The semiconductor devices and electronic circuit devices employing the semiconductor devices of the present invention will be described below with reference to various embodiments in conjunction with the drawings.
In the drawings which illustrate various embodiments, the same portions or the equivalent portions are denoted by the same reference numerals or symbols. Further, except where it is required, only the reference numerals are given on the drawings, and their descriptions are omitted.
Prior to illustrating the embodiments, the transistors (hereinafter referred to as insulated transistors) of the present invention are classified as follows depending upon differences in their construction: (A) Transistors of the internally insulated type: In a transistor of the internally insulated type, an insulating layer is formed between the semiconductor pellet and the case (stem or flange).
The transistors of this type can be further classified as follows: (A1) Transistor in which an insulating layer is formed on the semiconductor pellet.
(A2) Transistor in which an insulating plate (member) is interposed between the semiconductor pellet and the case.
(A3) Transistors in which an insulating layer is formed on the case.
(B) Transistors of the externally insulated type: The transistors of the externally insulated type have a case of an insulated construction.
Therefore, the transistors of this type are not divided into further groups.
The embodiments of the invention will be described below. Before each of the embodiments there is a heading such as "Embodiment Al-i" to clarify the relation to the above-mentioned classifications. For instance, the heading "Embodiment Al -1" is one which pertains to the group Al.
Embodiment Al-l: Figs. 2 and 3 show an insulated transistor of the construction in which an insulating layer is formed on the semiconductor pellet.
In these drawings, the insulated transistor 1 B consists of a semiconductor pellet 6 which is sealed in a transistor case 18. In Fig. 3, the semiconductor pellet 6 is a bipolar transistor which is made up of a collector region C, a base region B and an emitter region E. The semiconductor pellet 6 may otherwise be a field effect transistor which is made up of a gate region, a source region and a drain region.
Further, the insulated transistor 1 B has a flange 2 made of a piece of metal such as steel having mounting holes 2a at both ends thereof, and a heat sink 3 made of a short cylindrical metal member such as copper which is fastened by caulking to a nearly central portion of the flange 2. With the flange 2 and the heat sink 3 as a stem, the pellet 6 is fastened thereonto. Electrodes CO, Bo and Eo of the pellet 6 are electrically connected to external leads 19, 20 and 21 (external leads for the collector, base and emitter) via wires 22. The portions of leads 19, 20 and 21 near the pellet 6, and the wires 22 are sealed with a resin 10.Here, the leads 19, 20 and 21 have been formed as a unitary structure in the form of a lead frame; after the molding, the connected portions (frame) will be separated from each other.
In this embodiment, the pellet 6 which constitutes the bipolar transistor should be of the planar type and, hence, the collector region is formed on the bottom side of the pellet 6. In this embodiment an insulating oxide film (SiO2) 23 is formed on the bottom surface of the pellet 6 by chemical treatment, as shown in Fig. 3, so the pellet 6 is electrically insulated from the heat sink 3 by the oxide film 23.
The oxide film 23 is formed by thermally oxidizing the bottom surface of the pellet 3 prior to adhering the pellet 6 to the heat sink 3. The pellet 6 is then adhered onto the heat sink 3 by a soldering member 24.
Likewise, an oxide film is also formed on the upper surface of the pellet 6, and the wires 22 are connected thereto. Furthermore, it # it is necessary to form a metallized film on the surface (bottom surface) of the oxide film 23 in order to provide adhesiveness between the solder and the oxide film 23. The metallized film, however, is not necessary when a generally employed adhesive agent is used in place of the solder or the like. In Fig. 3, reference numeral 25 denotes an oxide film for insulating the electrodes from each other, and 26 denotes a vaporized aluminum film for formimg electrodes.
Referring to Fig. 3, the thus constructed insulated transistor may be fastened to the heat-radiating plate 11 by a bolt 17 in such a manner that the flange 2 comes into direct contact with the metallic heat-radiating plate (mounting substrate) 11.
According to this embodiment, the pellet 6 is insulated from the heat sink 3 and the flange 2 by the oxide film 23, and is also insulated from the transistor case 18. Leads 19, 20 and 21 connected to the electrodes are also insulated from the transistor case 18.
Therefore, the flange 2 may be attached directly to the mounting substrate (heat-radiating plate) 11 by screw 17 or the like, without the aforementioned inconvenience. On the other hand, since the oxide film 23 formed on the pellet 6 may be as thin as several microns, the thermal resistance between the pellet and the case is increased very little, even compared with when the pellet is fastened directly onto the case 18. In other words, the device according to this embodiment exhibits good heat-radiating performance. Further, by mounting the transistor directly on the heat-radiating plate, parts such as the insulating plate and insulating washer can be omitted, reducing the number of steps in the mounting operation and the manufacturing cost.Further, since there is no insulating plate or washer which may break and completely lose the dielectric breakdown voltage, the device exhibits excellent insulating characteristics.
Embodiment A2-1: Figs. 4 and 5 show an insulated transistor 1 C of the construction in which an insulating plate is interposed between the pellet and the case to insulate them from each other.
In these drawings, the pellet 6 is adhered by the soldering material 27 onto a paddlelike segment (tub) 5 that is formed together with the lead 19 as a unitary structure. Although not diagrammed, a layer is plated on the surface of the tub 5 to provide good adhesion to the soldering material. An insulating plate 28 with a size nearly equal to that of the tub 5 is interposed between the tub 5 and the heat sink 3, and is adhered by soldering materials 29, 30. The pellet 6 thus has a collector electrode on the bottom surface thereof, and lead 19 formed unitarily with the tub 5 serves as a collector lead. Further, the base and emitter electrodes Bot Eo formed on the upper surface of the pellet 6 are electrically connected to other leads 20, 21 through wires 22.The resin 10 is molded around the pellet 6, insulating plate 28, lead posts and wires in such a manner that the lower surfaces of the flange 2 and the heat sink 3 are exposed.
Here, to be suited for use as the insulating plate 28, the material should satisfy the requirements that (a) it is capable of being adhered onto the metals of tub 5 and case (heat sink) 3; (b) it has a dielectric breakdown voltage greater than a predetermined necessary value; and (c) it has a small thermal resistance. Examples of the materials which satisfy these requirements to a reasonable extent may include beryllium oxide, polyimide resin, mica, epoxy resin, BN (boron nitride) or a laminated resin plate consisting of a fluorine-containing resin, a polyimide resin and a fluorine-containing resin. Among them, beryl lium oxide, alumina ceramic and BN give relatively good effects.
When an alumina ceramic is to be used as the insulating plate 28, nickel should be plated onto the upper and lower surfaces of the insulating plate 28 so that soldering materials 29, 30 will easily adhere thereto.
Furthermore, for the reason mentioned below, boron nitride BN is suited for use as the insulating plate 28.
Namely, a film of boron glass (B203) is formed when the surfaces of the BN plate are oxidized. The film of boron glass melts at a relatively low temperature, and serves as an adhesive for the tub 5 and the heat sink 3.
Therefore, insulation can be reliably attained between the tub 5 and heat sink 3 without a need for any soldering material.
According to the embodiment of the present invention, the dielectric breakdown voltage should be greater than 2 kilovolts, and the thermal resistance SJC should be 1.8 C/W, as in the requirements (a), (b) and (c) mentioned above.
This embodiment is different from the abovementioned one since the insulation between the pellet 6 and the case 18 is maintained by the use of the insulating plate 28. This embodiment, however, exhibits nearly the same effects as those of the aforementioned embodiment.
In assembling the insulated transistor 1 C, it is recommended that soldering materials 27, 29 and 30 have the same melting point, so that the adhesion operation can be performed in a single step. Examples of the soldering material include a Pb/Sn solder, a Ag paste, and the like, On the other hand, when consideration is given to the thermal fatigue of the insulated transistor when it is subjected to a power cycling test, it is desirable that the tub 5, insulating plate 28 and heat sink 3 are firmly adhered together. For this purpose, therefore, the soldering materials 29, 30 should have a higher melting point than the soldering material 27 for adhering the pellet 6, and the soldering should be effected before the pellet is attached.
When a conventional transistor is mounted on the heat-radiating plate via an insulating material such as mica, the dielectric breakdown voltage is 1.2 kilovolts. The device according to the embodiment of the present invention, however, exhibits a dielectric breakdown voltage of 2 to 3 kilovolts.
Embodiment A2-2: Fig. 6 illustrates an insulated transistor 1 H1 in which the resin 10 exhibits a great adhesive force relative to the case 18 (heat sink 3).
For example, when the heat sink 3 has a diameter which is small compared with the size of the insulating plate 28A as shown in Fig. 5, the area of contact between the resin 10 and the upper surface of the heat sink 3 is small, and the adhesive force of the resin is reduced. Therefore, the soldering material 30 between the insulating plate 28A and the heat sink 3 loses its adhesive strength due to thermal fatigue; and life in the power cycling test is shortened. Referring to the transistor 1 H, shown in Fig. 6, on the other hand, the heat sink 3A has an upper surface which is large relative to the insulating plate 28A, so that there is a large area of contact (adhesion) between the resion 10 and the upper surface of the heat sink 3A. Accordingly, the resin bond is stronger, and thermal fatigue of the soldering material 30 is reduced.The dimensional ratio in the vertical and lateral directions of the heat sink 3A relative to the insulating plate 28A should be greater than 1.2.
Embodiment A2-3: The insulated transistor 1 H2 shown in Fig.
7 7 has rugged grooves 37 in the upper surface of the heat sink 3B in order to further increase the adhesive force of the resin as compared with the insulated transistor 1 H, of Embodiment A2-2.
Embodiment A2-4: The insulated transistor shown in Fig. 8 is designed so that thermal fatigue of the soldering materials 29, 30 on the upper and lower surfaces of the insulating plate 28A is reduced.
When the soldering materials 29, 30 are not uniformly formed maintaining a suitable thickness (for example, 20 to 80 !lem), the soldering materials undergo thermal expansion at different rates, whereby thermal fatigue is increased and the life is shortened.
According to the insulated transistor 1 Ii of Fig. 8, on the other hand, tongue and groove portions 38, 39 of a uniform height are formed on the surfaces of the tub 5A and the heat sink 3, and these tongue and groove portions are filled with the soldering materials 29, 30, so the soldering materials thus assume uniform thickness. The tongue and groove portions 38, 39 may be formed in the shape of a lattice, in the shape of sections, or simply in the shape of projections.
Embodiment A2-5: For the same reasons as Embodiment A2-4, the insulated transistor 112 shown in Fig. 9 has tongue and groove portions 40 formed on the upper and lower surfaces of the insulating plate 28B.
The above-mentioned processing can be readily and easily effected when the insulating plate is made of a material such as alumina.
Embodiment A2-6: Fig. 10 shows an insulated transistor in which the insulating plate exhibits increased insulation reliability. In the case of the transistor 1C shown in Fig. 5, the tub 5 and the heat sink 3 can be short-circuited through the soldering members 29, 30 at the edge of the insulating plate 28A, whereby the insulating plate 28A loses its insulating function and the transistor as a whole loses its reliability. With the insulated transistor 1J2 shown in Fig. 10, on the other hand, a base portion 1 9a of a lead 19 formed together with the tub 5 as a unitary structure is folded upwards, so that the soldering material 29 will not melt down beyond the base portion 1 9a; and the possibility of short-circuiting is thus prevented. An insulating plate 28A of a slightly increased size will also effectively prevent short-circuiting.
Embodiment A2-7: Referring to a transistor 1 J3 shown in Fig.
11, a plurality of grooves 41 are formed in the upper peripheral portion of the insulating plate 28C. The grooves 41 prevent the soldering material 29 from flowing down to the lower side of the insulating plate through the periphery of the insulating plate 28C. It is therefore possible to prevent the soldering materials applied to the upper and lower surfaces of the insulating plate 28C from shortcircuiting.
It is also possible to form protruded ridges instead of grooves. Formation of grooves or ridges makes it possible to prevent the occurrence of poor insulation as mentioned above, helps increase the insulating distance in the insulating plate 28C, and further helps increase the dielectric breakdown voltage.
Embodiment A2-8: Figs. 12 to 14 briefly illustrate a process for producing a transistor by using a lead frame which has a tub and external leads formed as a a unitary structure.
Namely, in mounting the lead frame with the pellet on the tub, in the case when mounting is followed by soldering or molding with a resin, a problem arises in that it is difficult to position the lead frame relative to the case. On the other hand, according to the embodiment of the present invention as shown in Fig. 12, a lead frame 4A has a tub 5, three leads 19, 20 and 21, and a pair of fixing leads 42, 42, formed as a unitary structure. Prior to soldering the pellet on the tub 5 of the lead frame 4A, the fixing leads 42, 42 are fastened by caulking to projections 2b(2b) formed on the case 18 (flange 2) as shown in Fig. 13, and the lead frame 4A and the case 18 are set together maintaining a predetermined relative position.After the soldering or resin molding has been finished, the lead coupling portions 43 and fixing leads 42 are cut away as shown in Fig. 14, so good insulation is maintained between the leads and the case. In producing the transistor 1 K, no special jig or clumsy positioning operation that must rely upon the positioning holes of the lead frame is required; the manufacturing steps can be greatly reduced, and the positioning precision is increased. For instance, when the lead frame without the fixing lead 42 is used, 15 hours is required to manufacture 1000 transistors. Using the lead frame 4A, however, only 6.4 hours is required to manufacture the same number of transistors.
The foregoing description has dealt with insulated transistors having relatively large output performance of the resin molded type.
The internal constructions of the above-mentioned embodiments can also be applied to a transistor 1 L with a can-type package shown in Fig. 15; to a transistor 1 M with a resinmolded package and small output performance as shown in Fig. 16; and to transistors of any other types. The same is of course true for the insulated transistors of other constructions that will be mentioned below.
As will be obvious from the above descrip-, tion, the electrodes of the insulated transistors are completely insulated from the case. Therefore, referring, for example, to the bipolar transistor 1 N of Fig. 17, it is possible to realize a four-terminal transistor which has a flange (case) terminal F in addition to the lead terminals for the collector C, base B and emitter E. By using the above transistor, therefore, increased freedom is provided for designing a circuit on the mounting substrate (e.g., the flange terminal F can be used for connection to a different electrode), and the heat-radiating plate can be commonly utilized (a variety of transistors can be mounted on a single heat-radiating plate).
Embodiment A2-9: According to the insulated transistor of the present invention as shown in Fig. 17, the terminals C, B, E and F are insulated from the case. Therefore, as represented by a composite transistor 101 of Fig. 18, it is allowed to mount a pair of pellets 6A and 6B (a PNP transistor pellet and an NPN transistor pellet) on the same tub 5, and to connect the wires suitably. Consequently, a complementary composite transistor 103 can be constructed as shown in Fig. 20. Namely, referring to the composite transistor 10, of Fig. 18, the bases of the pellets 6A, 6B are electrically connected to each other through a wire, and the collectors are connected to each other through the tub 5.
Embodiment A2-10: Referring to a composite transistor shown in Fig. 19, a pair of pellets 6A, 6B (PNP transistor pellet, NPN transistor pellet) are mounted on the different tubs 5B and 5C, and their bases and emitters are electrically connected to each other through wires. Consequently, a composite transistor 104 can be constructed as shown in Fig. 21.
The above-mentioned embodiments A2-9 and A2-10 help reduce the space required for mounting the transistors, reduce the number of steps for mounting the transistors, and reduce the manufacturing cost.
Embodiment A2-11: Referring to an insulated transistor 1 D shown in Figs. 22(A) and 22(B), a metal layer 31 which corresponds to the tub is formed on the upper surface of the insulating plate 28A.
The pellet 6 is mounted directly on the metal layer 31 by the soldering material 27. Referring to Fig. 22(B), the insulating plate 28A and the metal layer 31 have a sidewardly protruded portion P; the lead 19 is welded to the metal layer 31 a of the protruded portion P. The metal layer 31 is formed by adhering a thin metal plate on the insulating plate. The metal layer 31 may, however, also be formed by vaporizing or coating a matal material.
Embodiment A2-12: As a modified example of the above embodiment A2-1 1, there can be contrived an insulated transistor 1 E as shown in Fig. 23.
The insulated transistor 1 E has a metal layer 32 applied to the lower surface of the insulating plate 28A, formed simultaneously with the formation of the metal layer 31.
Because of the metal layer 32, the adhesion by the soldering material 30 between the insulating plate 28A and the heat sink 3 can be improved, and the insulating plate 28A and the soldering material 30 can be selected over wider ranges. For instance, solder can be used in place of the silver paste to reduce the manufacturing cost of the transistors.
According to the aforementioned embodiments A2-2 and A2-3, no adhesion is required between the tub and the insulating plate. Therefore, the soldering layer can be eliminated, the number of assembling steps can be reduced to reduce both the manufacturing cost and the thermal resistance.
Embodiment A2-13: Using the present invention, since the individual terminals are insulated from the case, it is possible to apply any desired bias voltage to any terminal and it is possible to connect any terminal to the case.
For example, a cap-type transistor 1 P, shown in Fig. 24 can be easily applied to an emitter-grounded circuit.
Namely, referring to Fig. 24, the collector and base of the pellet 6 are electrically connected through wires to a pair of lead posts 13A and 14A that are supported by, yet insulated from the case (metallic flange 2A) 18. The emitter, on the other hand, is electrically connected to the flange 2A through a wire 22A. Reference numeral 44 denotes a metal cap which is electrically connected to the flange 2A. The thus constructed transistor can be easily applied to an emitter-grounded circuit, which is frequently employed for the transistor circuits. Therefore, the resistance of the emitter wiring can be reduced, and the emitter line is less affected by disturbances.
Furthermore, the collector is shielded by the cap 44 and the flange 2A. It is therefore possible to eliminate the difficulties encountered when transistors having high dielectric breakdown voltage and high operation-speed characteristics are required, as well as to eliminate the radiation of undesired electromagnetic waves. The same also holds true when a transistor of the basegrounded type is to be formed.
Embodiment A2-14: The cap-type transistor 1 P2 shown in Fig.
25 is a field effect transistor. When the drain electrode D which had been connected to the flange 2A is connected to the lead post 13B, and the source electrode S is connected to the flange 2A, the source inductance can be decreased, and high-frequency and noise characteristics can be improved.
Embodiment A3-1: Fig. 26 illustrates an insulated transistor 1 F in which the insulating layer is formed directly on the surface of the case 18 or, in other words, on the pellet-mounting surface of the case (heat sink 3). Namely, referring to Fig.
26, an insulating material such as a ceramic material is melt-applied to the upper surface of the heat sink 3 to form the insulating layer 33. Further, a metal layer 34 is formed on the upper surface of the insulating layer 33. The tub 5 and pellet 6 are adhered onto the metal layer 34 by the soldering materials 35, 36.
Furthermore, the pellet 6 may be adhered directly onto the metal layer 34. In forming the insulating layer 33, the insulating material may be subjected to baking or a sheet-like insulating material may be stuck on.
Embodiment A3-2: According to a transistor 1 G shown in Fig.
27, a portion 1 Oa of the molding resin 10 is interposed between the tub 5 and the heat sink 3 so as to serve as an insulating layer.
The insulating layer 1 Oa is inevitably formed if the case 18, pellet 6, lead (tub 5) 19, and the like are molded with a resin using a moling machine. In this case, it is also possible to temporarily mount the pellet by potting a resin layer on a site which corresponds to the insulating layer 1 ova, to facilitate positioning.
According to these embodiments A3-1 and A3-2, the insulating layer and the soldering layer can be greatly reduced, to reduce the number of assembling steps and to reduce the manufacturing cost. The transistors thus assembled, however, are slightly inferior to those of the aforementioned embodiments with regard to the dielectric breakdown voltage, thermal resistance and strength.
Externally insulated transistors (in contrast with the aforementioned internally insulated transistors) will be discussed below. The transistors of the externally insulated type have an insulating layer in a portion of the case between the mounting surface of the heat-radiating plate (mounting substrate) and the heat sink. The externally insulated transistors, however, are the same as the internally insulated transistors in that the electrodes of the pellets are insulated from the heat-radiating plate.
Embodiment B-l: Fig. 28 illustrates a transistor 1 Q in which an insulating layer is formed in a flange 2B which constitutes a portion of the case 1 8.
The flange 2B has an insulated plate 45 roughly at the middle in the thickness direction of the flange over the whole surface of the flange. Metal pieces 46, 47 are adhered onto the upper and lower surfaces of the insulating plate 45. The upper and lower metal pieces 46 and 47 are insulated from each other. In this case, an insulating material is formed on the periphery of the flange 2C and on the periphery of the mounting holes 2a together with the insulating plate 45 as a unitary structure, so that insulation is maintained even when other parts or mounting bolts are used. The pellet 6 is mounted on the upper metal piece 46 or on the heat sink 3 secured thereto directly or via the tub, and wires 22 are connected to the leads 19 to 21.
According to this embodiment, since the pellet 6 is mounted in the same manner as the conventional ones, the collector, for example, is electrically conductive to the heat sink 3 or to the metal piece 46 on the upper side of the flange. Even when the insulated transistor 10 is directly mounted on the heat-radiating plate, however, the metal piece 47 in contact with the heat-radiating plate is insulated from the metal piece 46 on the upper side. Therefore, the collector is not electrically connected to the heat-radiating plate but is electrically insulated. Consequently, insulating material or an insulating washer is not required for mounting the transistor, and the mounting operation is facilitated, reducing the manufacturing cost.Although the flange 2B has the insulating layer 45 in the center thereof, the thickness of the insulating layer 45 is very small, and since other portions in the direction of thickness are made of metal, the thermal resistance is small and the heatradiating performance is not lost.
Embodiment B2: Fig. 29 illustrates a transistor 1 R based upon the same idea as the aforementioned embodiment B-l in which the whole flange 2C is made of an insulating material. The insulating material should have a small thermal resistance, and a metal layer 48 should be adhered by a soldering material 49 onto a corresponding position on the upper surface of the insulating material (flange 2C) prior to mounting the pellet 6. Beryllium oxide or alumina can be used as an insulating material.
This embodiment features increased dielectric breakdown voltage owing to the increased distance between the edge surfaces, although the heat-radiating performance is slightly decreased.
Embodiment B-3: Fig. 30 illustrates a transistor 1 S in which the whole flange 2 is covered with an insulating film 50 which is formed by blowing an insulating material such as epoxy resin, followed by coating with powder or an electrostatic coating. Therefore, the insulating film is formed even in the inner surfaces of the mounting holes 2a, and the flange 2 is not electrically connected to the heat-radiating plate when the flange 2 is mounted on the heat-radiating plate with bolts. According to this embodiment, complex construction is not employed in the transistor case (neither for mounting the pellet nor with regard to the internal construction of the flange). Namely, this embodiment can be readily applied to the existing transistors.Further, since the flange 2 which has the greatest area among other components in the transistor case is insulated, the thermal resistance is reduced, and the heat-radiating performance is enhanced.
Heat-radiating performance of the abovementioned types of insulated transistors is considered below.
In the above-mentioned transistors, the pellet is mounted on the tub or on the heat sink, such that the heat of the pellet is absorbed by the tub or the heat sink and is radiated. With power transistors and thyristors, in particular, the above-mentioned construction is essential to reduce the thermal resistance. According to the experiments conducted by the inventors of the present invention, however, it was made clear that there exists a correlation between the thermal resistance characteristics and the ratio of the flat areas of the tub or the heat sink to the flat areas of the pellet. Therefore, it is possible to find the best area ratio to realize desirable heat radiation.
Fig. 31 is a diagram of characteristics, in which the ordinate represents a thermal resistance index, and the abscissa represents a ratio of tub area ST to pellet area Sp. In the generally employed transistors, the heat resistance index should be around 0.4 and smaller than 0.6. Therefore, the area ratio should be selected to be from 1.5 to about 2.5. In the transistors of the aforementioned embodiments, the pellet has a side 4.5 mm long, and the tub has a side 8.4 mm long. Hence, the area ratio is 3.5, and the thermal resistance index is about 0.4.
Mentioned below are electronic circuit devices of the present invention incorporating the insulated transistors of the present invention as required constituent of the circuits.
Assembly 1: Fig. 32 shows an electronic circuit device in which an insulated transistor of the resinmolded type is mounted directly on the mounting substrate. With the electronic device 100A of the present invention, even when the insulated transistor 1 X is directly mounted on the mounting substrate 11, such as the chassis, which also serves as a heatradiating plate, the lead terminals L are insulated from the heat-radiating plate 11. Therefore, the flange 2 can be directly mounted on the grounded heat-radiating plate using bolts 1 7a and nuts 17b without a need for any insulating material or insulating washer such as of mica. Since no insulating member is used, the number of steps for mounting the transistor is reduced. Further, the dielectric breakdown voltage is not decreased by defective insulating material or the like.Moreover, the insulating material establishes small capacitance, and the circuit devices develops little loss even under high-frequency conditions. In particular, with an internally insulated transistor using alumina plate as the insulating material, it has been experimentally confirmed that the capacitance can be reduced to 30 pF, which is a striking reduction when compared with the capacitance (about 200 pF) of the conventional mica plate.
Assembly 2: Fig. 33 shows an electronic circuit device 100B consisting of a plurality of circuit elements, in which a circuit unit 101 has a heatradiating plate (portion) 51 maintained at a predetermined potential. The circuit unit 102, on the other hand, does not have the heatradiating plate (portion). These circuit units 101 and 102 are electrically connected together via an insulated transistor 1X. Namely, the transistor 1X is mounted on one unit 101, and the lead terminal L is connected to the other circuit unit 102. Since the flange and the lead terminal of the transistor 1X have been insulated from each other, the potential of the circuit unit 101 does not affect the lead terminal L, and the circuit units can work independently of each other.
According to this embodiment, the heatradiating space is not restricted to only within the circuit unit but can be more extensive. In accordance with the embodiment of the present invention, therefore, even a complicated circuit setup (where, for example, a common ground is not formed) can be simplified, making it possible to reduce the size of the device, increase the density and, eventually, to simplify the design requirements and maintenance.
Assembly 3: Fig. 34 shows an electronic circuit device 100C in which a pair of insulated transistors lX1 and 1X2 are opposed to each other, and are fastened by the flanges 2X1, 2X2 to form a unitary structure. Since the lead terminals L1, L2 of the transistors 1X1, lX2 are insulated from the flanges, the electronic circuit device constitutes a complementary circuit as shown in Figs. 20 and 21. The device can be utilized for a circuit of Fig. 35, which is connected to a load element 52 which drives a motor or has inductance components. This helps to reduce the mounting space. Further, since the two flanges are fastened together, the thermal capacity can be doubled to enhance the heatradiating performance.
In an electronic device 100D in which the internally insulated transistor 1X is mounted on the grounded heat-radiating plate 11 as shown in Fig. 36(A), a capacitance Cx is produced across the insulating plate 28A.
This circuit setup can be regarded as being equal to one in which a capacitance Cx is connected between the collector and the ground, as shown by an equivalent circuit in Fig. 36(B).
Furthermore, as shown in Fig. 37(A), if an insulating member 15 is provided between the flange 2 and the heat-radiating plate 11, an electronic circuit device 100E can be constructed, which is equivalent to the circuit of Fig. 37(B). Use of the insulated transistor 100E eliminates the need of a capacitor Cx which is usually used as a separate unit in the oscillation-preventing circuits of Figs. 38(A) and 38(B). Referring to a protection circuit for electronic circuits used in automobiles shown in Fig. 38(C), only a coil Lx and a resistor R need be added, and no extra capacitor is required. Therefore, the construction can be simplified, and the manufacturing cost can be reduced.
According to the present invention as illustrated by way of a variety of embodiments in the foregoing, the transistor can be easily assembled requiring a reduced number of parts. Furthermore, the transistor can be used in a variety of modes to increase the degree of utilization. The transistor further exhibits increased dielectric breakdown voltage and improved heat-radiating performance. According to the electronic device of the present invention, insulated transistors can be utilized to a greater extent.
When the transistor of the present invention is to be mounted, there is not need to interpose an insulating plate such as mica between the transistor and the mounting substrate, nor is there any need to fit an insulating washer.
Therefore, there is no possibility that the insulating plate or the insulating washer (which has small mechanical strength) will break and lose its insulating property. There is no possibility that the insulating plate and the insulating washer will break or deteriorate by aging while the device is being used. The device according to the present invention exhibits a high degree of reliability and insulation.
Therefore, the device of the present invention is suited for use in electronic parts for automobiles. The device of the present invention is of course suited for use under various other conditions.

Claims (26)

1. A semiconductor device comprising: a semiconductor pellet; an external lead having a paddle-like segment to which a main surface of the semiconductor pellet is adhered with electrical contact; another external lead which is electrically connected to another main surface of the semiconductor pellet; a heat-radiating member made of a metal; an insulator interposed between the paddlelike segment and the heat-radiating member to electrically insulate them from each other; and a sealing member for sealing the semiconductor pellet, the paddle-like segment and the insulating member.
2. A semiconductor device according to claim 1, wherein said sealing member consists of a resin.
3. A semiconductor device according to claim 1 or claim 2, wherein said insulator assumes the shape of a plate.
4. A semiconductor device according to claim 3, wherein the area of said heat-radiating member is greater than the area of said plate-like insulator.
5. A semiconductor device according to claim 2, wherein grooves are formed in a portion of said heat-radiating member that comes into contact with said sealing member made of a resin.
6. A semiconductor device according to any one of the preceding claims, wherein said paddle-like segment has a tongue and grooved portion.
7. A semiconductor device according to any one of the preceding claims, wherein said insulator assumes the shape of a plate, and has tongue and grooved portions in the upper and lower surfaces thereof.
8. A semiconductor device according to any one of the preceding claims, wherein the external lead having the paddle-like segment has a detouring portion in the vicinity of the segment.
9. A semiconductor device according to claim 3 with claim 2, wherein grooves are formed in a portion of said insulator that comes into contact with said sealing member made of a resin.
10. A semiconductor device according to any one of the preceding claims, wherein a plurality of semiconductor pellets are mounted on said paddle-like segment.
11. A semiconductor device according to any one of the preceding claims, wherein provision is made for another external lead having a paddle-like segment, and semiconductor pellets are mounted on the paddle-like segments of the respective external leads.
12. A semiconductor device according to claim 3, wherein said insulator is composed of an alumina ceramic.
13. A semiconductor device according to claim 3, wherein said insulator is composed of boron nitride, and said paddle-like segment and said heat-radiating member are adhered to the insulator with a film of boron glass.
14. A semiconductor device comprising: a semiconductor pellet having two main surfaces; an insulating plate having a metal layer adhered onto one main surface thereof; a plurality of external leads; and a heat-radiating member made of a metal; wherein a main surface of said insulating plate is adhered onto said heat-radiating member, a main surface of the semiconductor pellet is adhered onto the other main surface of said insulating plate via said metal layer, one external lead is electrically connected to said metal layer, and another external lead is electrically connected to another main surface of said semiconductor pellet.
15. A semiconductor device according to claim 14, wherein one main surface of said insulating plate is adhered onto said heatradiating member via a metal layer.
16. A semiconductor device comprising: a semiconductor pellet having a plurality of electrodes formed on one main surface thereof, and an insulating layer formed on the other whole surface thereof a transistor case having a heat-radiating portion made of a metal; and a plurality of external leads that are supported by said case but electrically insulated thereform; wherein said semiconductor pellet is adhered onto said heat-radiating portion via said insulating layer, and the respective external leads are electrically connected to respective elec trodes.
17. A semiconductor device according to claim 16, wherein the semiconductor pellet is composed of silicon and the insulating layer is composed of a silicon oxide.
1 8. A semiconductor device comprising: a semiconductor pellet having a plurality of electrodes formed on one main surface thereof, and another electrode formed on the other main surface thereof; a a transistor case having a heat-radiating portion made of a metal; a plurality of external leads supported by said case but electrically insulated therefrom; and an insulating plate; wherein the other main surface of said semiconductor pellet is adhered onto said heatradiating portion via said insulating plate, said other electrode is electrically connected to one of said external leads, one of said plurality of electrodes formed on said main surface is electrically connected to said heat-radiating portion, and another electrode is electrically connected to another one of said external leads.
19. A semiconductor device according to claim 18, wherein said semiconductor pellet constitutes a bipolar transistor, and the electrode electrically connected to the heat-radiating portion forms an emitter electrode.
20. A semiconductor device according to claim 18, wherein said semiconductor pellet constitutes a field effect transistor, and the electrode electrically connected to the heatradiating portion forms a source electrode.
21. A process for producing semiconductor devices comprising: a step for preparing an external lead having a paddle-like segment, a plurality of external leads without paddle-like segment, and a lead frame having connecting portions connecting the leads.
a step for adhering a semiconductor pellet onto said paddle-like segment; a step for electrically connecting said plurality of external leads to a plurality of electrodes formed on the main surface of said semiconductor pellet; a step for adhering the paddle-like segment to which is attached said semiconductor pellet onto one main surface of a heat-radiating member via an insulator; a step for sealing said semiconductor pellet with a resin in such a manner that said external leads are supported maintaining electric insulation and the other main surface of said heat-radiating member is exposed; and a step for separating said external leads from the coupling portions.
22. An electronic circuit device characterized in that one of its constituent parts is a semiconductor device installed on a mounting substrate, said device having a semiconductor pellet, a transistor case which seals said pellet, and an insulator disposed between said case and said pellet.
23. A semiconductor device substantially as any described herein with reference to Figs. 2 to 38 of the accompanying drawings.
24. An electronic circuit device comprising a semiconductor device according to any one of claims 1 to 20, or claim 23, and a metal heat-radiating plate, irr which the heatradiating member of the semiconductor device is fastened directly onto the metal heat-radiating plate.
25. A process according to claim 21 for producing a semiconductor device, substantially as any described herein.
26. An electronic circuit device according to claim 22, substantially as any described herein with reference to the accompanying drawings.
GB8128041A 1980-09-17 1981-09-16 Mounting and cooling arrangements for semiconductor devices Expired GB2084796B (en)

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GB2084796B GB2084796B (en) 1984-09-05

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GB2084796B (en) 1984-09-05
HK44486A (en) 1986-06-27
DE3136796A1 (en) 1982-07-15
JPS5753947A (en) 1982-03-31
MY8600545A (en) 1986-12-31

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