GB2065967B - Field effect transitor - Google Patents

Field effect transitor

Info

Publication number
GB2065967B
GB2065967B GB8021812A GB8021812A GB2065967B GB 2065967 B GB2065967 B GB 2065967B GB 8021812 A GB8021812 A GB 8021812A GB 8021812 A GB8021812 A GB 8021812A GB 2065967 B GB2065967 B GB 2065967B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transitor
transitor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8021812A
Other languages
English (en)
Other versions
GB2065967A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB2065967A publication Critical patent/GB2065967A/en
Application granted granted Critical
Publication of GB2065967B publication Critical patent/GB2065967B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8021812A 1979-11-26 1980-07-03 Field effect transitor Expired GB2065967B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15345179A JPS5676576A (en) 1979-11-26 1979-11-26 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
GB2065967A GB2065967A (en) 1981-07-01
GB2065967B true GB2065967B (en) 1983-07-13

Family

ID=15562833

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8021812A Expired GB2065967B (en) 1979-11-26 1980-07-03 Field effect transitor

Country Status (5)

Country Link
JP (1) JPS5676576A (nl)
CA (1) CA1139893A (nl)
DE (1) DE3024826C2 (nl)
GB (1) GB2065967B (nl)
NL (1) NL189534C (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
KR920022546A (ko) * 1991-05-31 1992-12-19 김광호 모오스 트랜지스터의 구조 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728532A1 (de) * 1977-06-24 1979-01-11 Siemens Ag Sperrschicht-feldeffekttransistor
NL188776C (nl) * 1979-04-21 1992-09-16 Nippon Telegraph & Telephone Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan.

Also Published As

Publication number Publication date
GB2065967A (en) 1981-07-01
DE3024826C2 (de) 1985-05-09
NL189534C (nl) 1993-05-03
JPS5676576A (en) 1981-06-24
CA1139893A (en) 1983-01-18
NL8003944A (nl) 1981-06-16
DE3024826A1 (de) 1981-05-27
NL189534B (nl) 1992-12-01

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000702