GB2064873A

GB2064873A - Pressure sensitive electric switch

Info

Publication number: GB2064873A
Application number: GB8037047A
Authority: GB
Original assignee: Individual
Current assignee: Individual
Priority date: 1979-11-26
Filing date: 1980-11-19
Publication date: 1981-06-17
Also published as: IT1143185B; GB2064873B; CA1153801A; GB8318533D0; NL8006409A; GB2134321B; GB8318534D0; SE452925B; DE3044384A1; FR2470435A1; DE3044384C2; GB8322859D0; IT8050239A0; AU544234B2; SE8008205L; GB2134322A; GB2134320A; AU6467980A; GB2134321A; GB2134322B

Abstract

A pressure responsive electric switch has at least one pair of first (104) and second (112) conductors in spaced- apart relationship with at least one pressure sensitive resistive conductor (106, 114) is disposed in a position to interconnect the conductors when a force is applied. The invention may be incorporated in multiple touch switches having the conductors (220, 240) Figure 7 disposed side by side or stacked one above the other as in Figure 10 (not shown). The resistive conductor may be made from molybdenum disulphide particles with a resin binder and may include powdered carbon. <IMAGE>

Description

SPECIFICATION Pressure sensitive electronic device The present invention relates to pressure sensitive variable resistance devices, and in particular to devices having a thin layer of particulated semiconductive material with a multiplicity of surface contact protrusions disposed between at least two electrical contacts.

The generation of musical sounds by electronic means is well known. However, one problem which exists in most electronic instruments in the inability to continuously vary either the volume or the tonal quality of the sound generated. This inability limits the musician's freedom of musical expression. The present invention provides novel yet simple pressure responsive analog devices having a contact resistance which varies inversely with the amount of pressure applied to the device. When used in electronic musical instruments, a plurality of such analog transducers or switches may be placed side by side in an elongated fashion to provide a keyboard or one such switch may be used to effect changes in tone by altering the characteristics of one or more tone generating circuits in the musical instrument.

Pressure sensitive analog switches have been known. For example, both in Ruben, Patent No.

2,375,178, and Costanzo, Patent No. 3,386,067, analog switches are disclosed which sandwich a fibrous or sponge-like layer containing a conductive material between two conductor plates. As the two conductor plates are compressed the number of electrically conductive paths increases, thus decreasing the electrical resistance. However, the resistive layer must be resilient to force the electrodes apart when the compression force is released.

Furthermore, the resistive layer depends on macroscopic compaction to increase the number of electrical conductive paths, and consequently, must have a relatively large thickness. Finally, in such devices the resiliency of the sponge-like layer can decrease with use causing a degeneration in operating characteristics.

In Mitchell, Patent No. 3,806,471, pressure responsive semiconductor materials, e.g., molybdenum disulfide, is placed between conductor plates to provide an adjustable resistor or transducer. However, Mitchell relies on volume resistance, i.e., the resistance through a relatively thick volume of the molybdenum disulfide layer. The present invention on the other hand uses the contact or surface resistance of a very thin layer of molybdenum disulfide. More specifically, Mitchell discloses a molybdenum disulfide volume (thickness) of .001 to 1.0 inch using molybdenum disulfide particles in the range of 50 to 600 mesh to provide a high but finite number of three-dimensionally distributed current flow paths through the resistive material. Under compression, the number of current flow paths between the particles in the volume increases, thus causing the resistance to decrease.The semiconductor volume layer is then permanently positioned and attached between two conducting electrodes.

In addition to the above-described functional distinction, the structures disclosed by Mitchell require that the semiconducting volume be positioned between two conductors or between a conductor and an insulative plate in intimate contact with either the insulative plate or the conductors.

Such a configuration is fundamentally different from applicant's invention where the semiconducting composition layer must necessarily have at least one contact surface which is not in intimate contact with either a conductor or another semiconducting layer.

Such an arrangement takes advantage of the physical contact resistance over the surface of the composition rather than the surface resistance of the individual particles through the volume of material as in Mitchell.

The present invention uses particle sizes on the order of one micron and layer thickness preferably less than .001 inch. Furthermore, since the variable resistance occurs because of a greater or lesser number of surface contact locations, one surface of the semiconductor layer must either be initially spaced apart from one of the conducting electrodes or must be in non-intimate contact with the opposing surface. Depression of the conducting electrode against the surface of the thin semiconductor layer results in a plurality of contact points being made along the surface. These contact points increase as pressure is applied thus decreasing the resistance between the conducting plates or contacts on either side of the semiconductor layer. The semiconductor layer is made of any suitable particulated semiconductor material held together and to the surface with a binder.

A significant advantage of the thin semiconductor layer of the present invention is that the semiconductor material used to form the layer may be combined with a binder and a binder thinner and thereafter sprayed or silk-screened onto the desired surface to form a layer having a thickness as little as one mii or less. Labor and material costs are thus greatly decreased.

In addition to the above advantages, the use of molybdenum disulfide to cover the conductive layers effectively protects the surface of the conductor from contact with the air. This alleviates a serious problem which has been attendant with using conductors which slowly corrode when exposed to the air.

The present invention also substantially eliminates the electrical chatter which is inherent in most switches. Consequently, the resultant switch structure is bounceless.

In Pearl man, et al., Patent No. 4,044,642, a touch sensitive resistance device is disclosed for use in musical instruments. However, the device uses a semiconductor material sandwiched between two conductor plates in a manner similar to Ruben and Costanzo. Specifically, Pearlman, et al. uses a resilient material such as foam rubber or foamed synthetic polymeric material which has a particulate material such as graphite dispersed throughout. The switch structure has a foam semiconductor layer and an insulator layer with an orifice therethrough sandwiched between two conductor plates. Thus, when a compression force is applied, the graphitesaturated resilient foam layer deforms into the orifice in the insulator material to initially make electrical contact to thereby switch on the musical instrument.Thereafter, additional compression force causes the resistance between the two conductor plates to decrease in the manner previously described.

It is therefore desirable to provide analog transducer devices which do not rely upon the resiliency of the semiconductor layer and which do not furthermore rely on the volume resistance through a relatively thick semiconductor layer.

One particular embodiment of the invention comprises a number of chord switches in a keyboard arrangement so that when a chord switch is depressed one or more musical notes will be generated. The particular chord may be easily altered by simply rolling the finger which is applying the transverse touch force.

In another embodiment of the present invention, a dual switch touch sensitive structure has dual switches which are simultaneously actuated in response to a single touching force. A semiconducting composition may be disposed over the switch conductors (contacts) of at least one of the switches so that the resistance across the contact of that switch varies inversely to the amount of force applied.

Summary of the invention The present invention comprises pressure responsive analog switches and transducers having a resistance which varies inversely to the amount of compression force applied to the switch.

The pressure sensitive transducer includes a thin, pressure sensitive, semiconductor composition layer disposed on the surface of a resiliently mov able cover. Alternatively, the pressure sensitive semiconductor layer comprises a third conductor, such as a layer of silver, on a surface of the cover in an enclosure and a pressure sensitive semiconductor composition layer disposed on at least one of a first and second contact conductors.

Other embodiments of the invention include a pressure transducer device and simultaneously actu ated multiple switch devices.

Brief description of drawings Acomplete understanding of the present inven tion and of the above advantages may be gained from a consideration of the following description of the preferred embodiments taken in conjunction with the accompanying drawings in which: Figure 1 is a cross-sectional plan view of one embodiment of a pressure responsive analog switch with the pressure responsive coating positioned between two conductor plates in a spaced relation ship.

Figure 2 is a cross-sectional side view of a bounceless switch apparatus in accordance with the invention.

Figure 3 is a pressure versus voltage curve illustrating the variations in voltage across the semiconducting composition layers as the compression forcing those two layers together is increased.

Figure 4 is a curve illustrating the output of the bounceless switch in accordance with the invention shown in Figure 5.

Figure 5 is an illustrated embodiment of the bounceless switch apparatus in accordance with the invention having only one semiconducting composition layer.

Figure 6 is an exploded partial pictorial partial schematic diagram of a dual lateral transducer switch in accordance with the present invention in an unfolded, open configuration.

Figure 7 is a cross sectional side view of the switch apparatus shown in Figure 6 in the folded operating configuration through section 7-7.

Figure 8 is an exploded partial pictorial, partial schematic of another embodiment of the dual lateral switch embodiment of the invention.

Figure 9 is a partial schematic, partial cutaway perspective view illustrating one chord switch structure in accordance with the present invention.

Figure 10 is a cut-away side plan view of a dual-function, touch-switch apparatus in accordance with the invention.

Figure 11 is an exploded cross-sectional side view of one embodiment of a pressure transducer in accordance with the invention.

Figure 12 is a top plan view of the flexible base member of Figure 11 in an unfolded configuration showing the conductor patterns disposed thereon.

Figure 13 is an exploded cross-sectional side plan view of a second embodiment of the pressure transducer in accordance with the invention wherein the top of the flexible base constitutes a flap disposed to move transversely about a hinge portion.

Figure 14 is a top plan view of the flexible base used in Figure 13 in an unfolded configuration illustrating the conductor patterns disposed thereon.

Figure 15 is a simplified partial cross-section and partial schematic view of a musical instrument incorporating a pressure transducer as illustrated in Figures 11 to 13.

Figure 16 is a top plan view of the flexible base used in Figure 13 in an unfolded configuration illustrating another conductor configuration.

Detailed description Referring first to Figure 1, an analog switch in accordance with the present invention is shown comprising a first conductor plate 50 spaced from a second conductor plate 52 by spacer portions 54to define a gap or chamber 60 between the first and second conductor plates 50 and 52. At least one of the conductor plates 50 or 52 is resilient so that it may be depressed against the other conductor plate to close the switch.

The conductor plate may comprise a flexible support sheet 64, such as Mylar "(Registered Trade Mark)", with a thin conductive layer 66 of silver or other conductive material sprayed, screened or otherwise applied on the surface of the support sheet 64 adjacent the second conductor plate 52. The second conductor plate 52 may comprise a rigid plastic base member 68 with a thin copper surface 70 disposed thereon. Of course, it will be appreciated that the base member 68 may be flexible and the thin surface 70 may be made of silver or other suitable conductive material. A lead 56 and a lead 58 may be coupled to the silver layer 66 and the copper surface 70 respectively to allow for electrical coupling of the analog switch to a utilization circuit.

Finally, a thin semiconductor layer 62 of semiconductor material is sprayed, screened or otherwise evenly applied on the copper surface 70. Alternatively, the semiconductor material 62 may be sprayed, screened or otherwise evenly applied on the conductive layer 66 or on both the copper surface 70 and the conductive layer 66. The semiconductor material may be any suitable composition which is sprayable, screenable, or otherwise of a consistency which may be evenly applied to form a smooth exposed surface.

For example, the semiconductor material may be molybdenum disulfide particulate having particle sizes on the order of one to ten microns mixed with a binder material such as resin to form a liquid. A resin thinner may be added to give the composition a consistency suitable for spraying. The thin semiconductor layer 62 of the semiconductor material is then sprayed or screened on the conductive layer 66 of the support sheet 64 or on the copper surface 70 on the rigid base member 68. It will be appreciated, of course, that the semiconductor layer may be of any thickness so long as there is an exposed smooth semiconductor surface. However, in order to conserve on semiconductor material and to minimize surface irregularities which may occur when thick semiconductor layers are utilized, a thickness on the order of about .001 inch or less is preferred.

The spacer 54 may take various forms. For example, in one particularly sensitive embodiment shown in Figure 1,the spacer 54 is simply an extension of the support sheet 64 where the support sheet has been creased about all or a portion of the periphery of the usable portion of the conductive layer 66. The crease 20 acts like a spring tending to maintain the spacing in opposition to an external pressing force or pressure. Thus the crease provides not only the means of spacing but also gives the member 50 a resiliency which significantly enhances the sensitivity of the transducer.

It will be appreciated that the configuration of Figure 1 is illustrative only. Thus, the semiconductor layer 62 may be disposed on one or both of the support sheets 68 or 64 or may be placed directly on the support sheet 66 to act as a shunt between conductors 56 and 58 when conductor 58 is placed on the support sheet 68 in laterally spaced relationship to the conductor 56.

Referring to Figure 2, another embodiment of the invention is illustrated for providing a bounceless switch apparatus having a surface contact resistance which varies inversely with a pressure applied normally thereto. Specifically, a bounceless switch apparatus 100 has a first support member 102 which may be made out of Mylar (Registered Trade Mark) a rigid plastic material, or any other suitable nonconductive base material. A first conductor 104 is disposed on the surface of the support member 102 with a first pressure sensitive composition layer 106 disposed thereon to cover and be in intimate contact with the conductor member 104.

Juxtaposed normally opposite to the first pressure sensitive composition layer 106 is an assembly comprising a support member 110, which may be Mylar (Registered Trade Mark), rigid plastic, or any other suitable nonconductive material, a conductor member 112 disposed on one surface of the support member 110, and a second pressure sensitive composition layer 114 disposed to cover and be in intimate electrically conducting relationship with the conductor 112.The assembly comprising the second support 110, the second conductor member 112, and the second pressure sensitive composition layer 114 is positioned in facing relationship with the assembly comprising the first member 102 to the first conductor member 104 and the first pressure sensitive composition layer 106 so that the exposed surface of the first pressure sensitive composition layer 106 is in nonintimate but touching relationship with the exposed surface 116 of the second pressure sensitive composition layer 1 to thereby define a nonintimate contact junction 118.

The first and second pressure sensitive composition layers are made out of a particulated semiconducting material having particle sizes which are preferably on the order of one to ten microns, although larger sizes are possible. The particulated semiconducting material is then mixed with a binder material and, if necessary, a binder thinner, and then is sprayed, silk-screened or otherwise disposed on the conductors 104 and 112 respectively. Each resulting pressure-sensitive composition layer 106 and 114 thus has a number of particles which extend outwardly from the mean surface piane of the respective pressure sensitive composition layers 106 and 114 to form micro protrusions of particulate semiconducting material.It is these microprotrusions which allow, the first and second pressure sensitive composition layers to touch without being in intimate electrically conducting relationship.

However, when pressure is applied compressing the two surfaces together, the microprotrusions on the respective pressure sensitive composition layers are depressed toward one another forming more and more electrical contact points, thus decreasing the resistance across the junction 118. However, because there is already a small number of electrically contacting touching points (although these are ex tremelyfew resulting in a very high resistance when the respective pressure sensitive composition layers are not being depressed against one another), the chatter which results when mechanical contacts are brought into contact with one another in conventional switches is virtually eliminated. Furthermore, any chatter which might be generated occurs only when the resistance across the junction 118 is extremely high thus making the voltage drop across the junction 118 likewise very high thereby making the relative voltage excursions or variation very small.

In operation the pressure is applied to compress the respective pressure sensitive composition layers towards one another so that the resistance across the junction 118 decreases as the number of contact points between the microprotrusions of the particulate semiconducting material increases thus causing the voltage drop across the junction to decrease.

This, in turn, results in an increase in the output voltage at 128 as shown in Figure 3. By coupling this voltage to the threshold circuit 122, a bounceless transition from the OFF to the ON state at the output 130 can be achieved as generally illustrated in Figure 4.

Of course it will be appreciated that a threshold circuit is not necessary in many types of circuits particularly those using CMOS-type circuitry which has inherentthresholding.

An alternative embodiment of the invention with only one of the conductors having a pressure sensitive composition layer disposed thereon is shown in Figure 5. Specifically, a conductor member 132 is disposed on the top of an insulative support member 130 with a pressure-sensitive composition layer 134 disposed to cover the conductor 132 and be in intimate electrically conducting relationship therewith. A second conductor member 138 is similarly disposed on a second support member 140.

The second conductor 138 is then positioned in nonintimate but touching relationship with the exposed surface 136 of the pressure sensitive composition layer 134. In a manner similar to that previously described, the minute microprotrusions of semiconducting material allow the conductor 138 to be in touching but nonintimate and virtually nonconducting relationship with the semiconducting layer 132 thus resulting in an extremely high junction resistance between the conductor 138 and the pressure sensitive composition layer surface 136.

Although various particulate sizes and layerthicknesses are possible in accordance with the invention, it has been found that there is an inverse relationship between the amount of electrical chatter caused by closing or opening the switch contacts and the size of the molybdenum disulfide particles.

Thus, the fines the grain size of the molybdenum disulfide, the smoother the transition from the OFF to the ON state (or vice-versa) of the switch will be.

Specifically, it has been found that particle sizes less than one micron and preferably about .7 microns provide a substantially chatter-free switch transition.

Another embodiment of the invention comprises a novel switch apparatus which functions generally as a double-pole, single-throw switch whereby two independent switches are simultaneously actuated, that is, closed, in response to a single transverse touch force. At least one of the switches may be pressure responsive so that the amount of voltage drop across the switch various inversely to the amount of touching pressure applied against the switch.

Referring to Figures 6 and 7 the pressure actuated dual switch apparatus 210 has a support member 212 which may be made out of a flexible resilient material such as a thin sheet of Mylar (Registered Trade mark). The support member 212 has a first or bottom portion 214 and a second or top portion 216.

The first portion 214 and the second portion 216 of the support member are defined by a fold line 218 along which the second portion 216 is folded into an overlaying, but spaced apart, relationship relative to the first portion 214.

A plurality of conductors are disposed on one side of the support member 212. Specifically, a first conductor 220 electrically interconnected to a first terminal 222 is disposed on the surface of the support member 212 in a first pattern 224. A second conductor 230, electrically coupled to a second terminal 232, is disposed on the top of the support member 212 in a second pattern 234. The first pattern 224 and the second pattern 234 of the first conductor 220 and the second conductor 230, respectively, are disposed on the first portion 214 of the support member 212.

Athird conductor 240 is electrically interconnected to a third terminal 242 and is disposed on the secondportion 216 of the support member 212 in a conductor pattern 244 which is the reciprocal or mirror image of the first conductor pattern 224. Finally, a fourth conductor 250 is electrically interconnected to a fourth terminal 252. The fourth conductor 250 is disposed across the first portion 214 and onto second portion 216 of the support member 212. The fourth conductor 250 is disposed on the second portion 216 of the support member 212 in a pattern 254 which is the reciprocal, i.e., mirror image, of the second pattern 234.

A semiconductor composition 260 is disposed on top of at least one of the first, second, third or fourth conductors. Of course, it will be appreciated that the semiconducting composition 260 may be disposed on top of several of the conductors. Thus, electrical contact will be made through the semiconducting composition layer. This effectively provides a contact resistance between conductors 220 and 240 so that a resistance is in series with the switch defined by the conductors 220 and 240.

The semiconducting composition layer 260 may be any suitable material which is sprayable, screenable or otherwise of a consistency which may be evenly applied to form a smooth exposed surface covering the conductor as previously described.

A dual pressure actuated switch structure may be formed by folding the support member 212 along the fold line 218 so that the second portion 216 is aligned over the first portion 214 and the pattern portions of first conductor 220 and the third conductor 240 are in transverse alignment and the pattern portions of the second conductor 230 and fourth conductor 250 are in transverse alignment. The first and third conductors comprise the contacts for one switch and the other and fourth conductors comprise the contacts for the second switch.

A spacer 262 is positioned around the conductors between the first portion and the second portion to maintain the first and third conductors 220 and 240 and the second and fourth conductors 230 and 250 in a normally spaced apart relationship. In addition, it will be appreciated that the first and second conductors 220 and 230 on the first portion 214 and the third and fourth conductors 240 and 250 on the second portion 216 must be in close lateral proximity to allow a single transverse force to cause the first and third conductors 220 and 240 and the second and fourth conductors 230 and 250 to simultaneously move into electrically conducting relationship.

The switch device may be used in an electrical circuit having first and second utilization circuits 264 and 266. The utilization circuits 264 and 266 may be of any suitable circuit configuration such as that described in United States Patent Nos. 3,609,203 or 3,796,756.

It will be appreciated that the patterns formed by the conductors on the support member may have any configuration so long as the conductors for the respective two switches are sufficiently close together to allow simultaneous actuation by the finger of an operator. In addition, the support member may be made in two sections with the first and third terminals attached to one support member and the second and fourth terminals attached to the second support member.

Referring next to Figure 8, another embodiment of the invention is shown comprising a first base member 270 which may be a flexible Mylar (Registered Trade Mark) material, a rigid plastic material or any other suitable nonconducting support member, and a second base or support member 272 in transversely spaced relationship with the first base member 270. A first conductor 274 is disposed on the surface of the first base member 270. The conductor 274 includes a first contact member 276 with a plurality of interdigiting fingers 278 and a second contact member 280 also with a plurality of interdigiting fingers 282. The first contact member 276 is electrically interconnected to a first terminal 284 and the second contact member 280 is electrically interconnected to a second terminal 286.Afirst utilization circuit 288 may then be electrically coupled between the first terminal 284 and the second terminal 286 in the manner previously described in connection with the embodiment of Figure 6.

A second conductor 290 is likewise disposed on the surface of the first base member 270. The second conductor 290 has a pattern which in one embodiment is a U-shaped pattern disposed around the first conductor 274. As in the previous embodiment, the first conductor 274 and the second conductor 290 are laterally displaced on the first base member in sufficiently close proximity so that a single transverse touching force will simultaneously actuate the switches respectively including the first conductor 274 and the second conductor 290.

A third conductor 292 is likewise disposed on one surface of the second base member 272 in facing, aligned relationship with the first conductor 274, and a fourth conductor 294 disposed on the same surface of the second base member 272 in facing, aligned relationship with the second conductor 290. Hence, the first conductor 274 and third conductor 292 comprise the contacts of a first switch and the second conductor 290 and the fourth conductor 294 comprise the contacts of a second switch of the present invention.

In the preferred embodiment the third conductor 292 is simply an electrically isolated conductive portion on the second base member 272 having a size sufficient to overlay or cover the entire first conductor 274. The fourth conductor 294 has a size and shape corresponding to the second conductor 290. The first, second, third and fourth conductors 274, 290, 292 and 294 may be of any appropriate material and may, for example, be a thin layer of sprayed-on silver, a thin layer of copper, or other suitable conductive material.

In order to provide a variable contact resistance, a semiconducting composition 296, somewhat similar to that previously described, may be disposed to cover the first conductor 274, the third conductor 292, or on one or both of the second and fourth conductors 290 and 294.

In yet another alternative embodiment, the semiconductor composition layer 296 may be omitted and the third conductor 292 provided to be made solely of the semiconductor composition. In such an embodiment, a separate conductive layer such as the silver or copper layer previously described, need not be provided for the third conductor 292.

Finally, a second utilization circuit 298 may be interconnected between the second conductor 290 and the fourth conductor 294.

One advantage of this latter embodiment is that a plurality of similar dual switch apparatus may be arranged in a keyboard arrangement with each fourth contact of each separate dual switch arrangement being interconnected in a common buss configuration thereby minimizing the number of electrical contacts which must be made to interconnect the plurality of dual switches in the keyboard arrangement.

Referring next to Figure 9, a partial cutaway view of another novel multiple touch switch apparatus in accordance with the invention is shown. This switch is particularly useful in generating a chord in response to the application of a single transverse touching force. The multiple touch switch 310 functionally comprises a plurality of individually electrically isolated switches grouped in sets of two or more. Each such set comprises a chord switch. A plurality of chord switches is arranged side by side to form a keyboard for the multiple touch switch apparatus 310.

Specifically, the multiple touch switch apparatus 310 comprises a first support ply 320 which may be made of a rigid plastic insulative material or may be made of a resiliently deformable material such as Mylar (Registered Trade Mark). A plurality of multisegment conduction plies 322, each representing a separate chord switch comprises four first electrically isolated conductors, e.g., conductors 324,326, 328, and 330, each representing one pole or contact of the individually electrically isolated switches 325, 327,329 and 331, respectively, are then attached or otherwise fixed to the top surface 332 of the first support ply 320. In the embodiment of the invention in which a chord may be generated upon application of a single transverse touch force, the several first electrically isolated conductors 324, 326, 328 and 330, are positioned in sufficiently close lateral proximity to each other so that when an operator's finger is pressed against the multiple touch switch apparatus 310, the top surfaces of the several first electrically isolated conductors 324, 326,328, and 330 can be contacted to thereby simultaneously close all of the electrically isolated switches 325,327, 329, and 331 to generate a chord.

Although each of the first electrically isolated conductors 324,326,328, and 330 may be a single layer made of a purely conductive material such as a layer of silver, copper, or other similar conductive material, in the preferred embodiment, each of the first electrically isolated conductors comprises two layers; a conductive layer which is attached to the top of the first support ply 320 and a first semiconductor composition layer which is sprayed, silk screened, electrostatically plated, vacuum deposited, or otherwise disposed to form a very thin layer of semiconductor material which covers the entire conductive layer.

By way of example, in accordance with this preferred embodiment, the first electrically isolated conductor 324 comprises a first conductive layer 334 on top of which a first semiconductor composition layer 336 is disposed by spraying, silk screening or any other suitable method.

Each of the first electrically isolated conductors 324,326,328, and 330 are laterally spaced apart from one another to provide the necessary electrical isolation. Insulative spacers are not used between the first electrically isolated conductors which comprise a single chord switch so that a smooth transition between one chord and another chord having either added or deleted notes, can be achieved without "clicking" by simply "rolling" the operator's finger along the surface of the touch switch 310 to make or break contact with one or more of the first electrically isolated conductors. On the other hand, an insulative transverse spacer is provided to surround each multi-segment conduction ply 322, i.e., each chord switch.For example, in the embodiment of Figure 14, a plurality of sets of individual electrically isolated switches, one for each chord to be generated, is disposed on the top surface 332 where each such set of electrically isolated switches is surrounded by a transverse spacer 338.

The multiple touch switch apparatus 310 further comprises a second support ply 344 having a bottom surface 340 on which a unitary conductive layer 342, common to all chord switches, is attached. The unitary conductive layer 342 may also be a copper or silver layer which is preferably applied by plating, spraying, electrostatic plating or any other suitable technique by which a thin conductive layer may be affixed to the bottom surface 340 of the second support ply 344.

Preferably, although not necessarily, a second semiconductor composition layer 346 is affixed by spraying, silk screening or the like to the otherwise exposed surface of the unitary conductive layer 342.

The resultant structure, comprising the second sup port ply 344, the unitary conductive layer 342, and the semiconductor composition layer 346 is then attached by gluing by suitable mechanical attach ment or by any other method to the transverse spacer 338 so that the semiconductor composition layer 346 is juxtaposed transversely opposite to and spaced apart from the semiconductor composition layers of the chord switches.

The second support ply 344, the unitary conduc tive layer 342 and the semiconductor composition layer 346 are resiliently deformable so that when the operator presses his finger against the multiple touch switch apparatus 310, the second support ply 344 resiliently deforms to force the semiconductor composition layer 346 into an electrically contacting relationship with one or more of the semiconductor composition layers of one of the several sets of first electrically isolated conductors such as conductors 324,326,328 and 330.

It will be appreciated, therefore, that each of the electrically isolated switches such as the switches 325,327,329 and 331 which represent one chord switch perform a separate switching function but that all or a selected number of those switches may be closed in response to the application of a single transverse touching force.

By way of illustration of the interconnection of the switch apparatus 310 of Figure 8, a voltage controlled oscillator (VCO) 350 which generates a single high frequency signal, is coupled to a top octave generator 352, well known in the art, which incorporates, for example, frequency divider circuitry to generate a plurality of output signals, each having a different frequency, on one of a plurality of output leads. In order to generate a chord utilizing the above-described multiple touch switch apparatus 310, it is merely necessary to select four notes and thereafter identify the particular frequency of those musical notes. The output lead from the top octave generator 352 having that frequency is then coupled to one of the first conductive layers of the first electrically isolated conductors 324,326,328, or 330.

Similarly, the remaining first conductive layers of the first electrically isolated conductors are coupled to the appropriate output of the top octave generator 352 having an output signal with the remaining selected frequencies. Hence, when a transverse touching force is applied to the multiple touch switch apparatus 310, the semiconductor composition layer 346 will be pressed into contact with one or more of the semiconductor composition layers of the first electrically isolated conductors 324,326,328 or 330, to thereby couple one or more signals each with a different frequency, to the unitary conductive layer 342 where those signals are combined and outputted to an amplifier 354 and is thereafter audibilized by a speaker 356.

In the preferred embodiment of the invention, the first electrically isolated conductor 324 has its conductive layer 334 coupled to the frequency output of the top octave generator 352 having the frequency of the base note of the chord. In addition, in order to allow the base note of the chord to be more easily played alone, the first electrically isolated conductor 324 is provided to be of a greater width than the remaining first electrically isolated conductors 326, 328 and 330.

It will be apparent from the above description therefore, that if an operator desires to play a chord having four notes of different frequencies, it is necessary simply to apply a single transverse touching force at a location which will cause the first semiconductor layer 346 to contact each of the first electrically isolated conductors 324,326,328, and 330. If the operator wishes to delete a note from the chord, it is merely necessary for the operator to roll his finger slightly to thereby open one or more of the individual electrically isolated switches by releasing the transverse touching force.

The multiple touch switch apparatus 310 may also be provided with a single ON/OFF switch which is stacked in a laminate-like configuration to the aforedescribed keyboard switch arrangement. For example, in Figure 9, a first ON/OFF switch conductor 360 is disposed over the top surface of the second support ply 344 and a second ON/OFF switch conductor 362 is disposed over the bottom surface of a third support ply 364 to face the first ON/OFF switch conductor 360. The first ON/OFF switch conductor 360 and the second ON/OFF switch conductor 362 are then spaced from one another in a normally open switch configuration by a spacer 366 which may, for example, comprise a rectangularly cross-sectioned strip which is affixed between the second support ply 344 and the third support ply 364.

The ON/OFF switch may be coupled between a voltage source 361 and the VCO and the top octave generator. Therefore, unless the keyboard is depressed to close at least one of the chord switches, no power will be supplied to the VCO or by the top octave generator.

In another embodiment of the invention each multi-segment conduction ply 322 of Figure 9 comprises a single electrically contiguous conductor rather than four electrically isolated conductors. In such a configuration, a touch sensitive single note keyboard may be provided by interconnecting each electrically contiguous conductor to a different successive frequency output from a top octave generator such as the top octave generator 352 shown in Figure 9.

Referring to Figure 10, a dual function, touchswitch configuration in accordance with the invention has a first support member 620 made of an insulative material which may be flexible or rigid.

The first support member 620 has a top surface 622 on which a first conductor ply 624 is disposed.

A second support member 626, also made of insu lative material, is spaced above the first support member 620 by first spacers 628. A second conductor ply 630 is positioned or otherwise affixed to the bottom surface of the second support member 626 facing but in spaced apart relationship to the first conductor ply 624. The second support member 626 is made of a material which is resiliently deformable so that the second conductor ply 630 can be depressed into contact with the first conductor ply 624 by the application of a transverse force F. Thus, the movement of the second conductor ply 630 into contact with the first conductor ply in response to an applied transverse force 632 provides a first touch switch 632.

A second touch switch 642 which is also operable in response to the same transverse force F is incorporated by providing a third conductor ply 634 on the top surface of the second support member 626. Athird support member, which is also made of a resiliently deformable material, is spaced above the third conductor ply 634 by second spacers 640. A fourth conductor ply 638 is affixed on the bottom surface of a third support member 636 facing, but spaced apart from, the third conductor ply 634 in a normally opened, i.e., non-conducting, relationship.

The third support member 636, and hence the fourth conductor ply 638, is spaced apart from the third conductor ply 634 by the second spacers 640.

In operation, the application of the transverse force F, which may be applied by simply pressing against the top surface of the third support member 636, causes the third support member 636 and the fourth conductor ply 638 to be resiliently deformed into electrical conducting contact with the third conductor ply 634 to thereby close the second switch 642 coupled between a power source 643 and the power supply input of a utilization circuit 644. As additional transverse touch force F is applied, the second support member, and hence the third conductor ply 34 and the second conductor ply 630 are resiliently deformed so that the second conductor ply 630 is brought into electrically contacting re lationship with the first conductor ply 624 to thereby close the first switch 632 to thus couple an input signal to the utilization circuit 644.

In a basic embodiment of the present invention, the first, second, third, and fourth conductor plies 624,630, 634 and 638, each comprise simply a conductive layer or plate disposed on the appropriate first, second, or third support members 620, 626, or 636.

In an alternative embodiment at least one of the first and second conductor plies 624 and 630 comprises a conductive layer on top of which is disposed a layer of semiconductor material to thereby couple a resistance in series with the switch. Similarly, the second conductor ply 630 may include a second conductive layer 650 covered by a second semiconductor composition layer 652.

It will be appreciated, of course, that one or both of the third and fourth conductor plies 634 and 638 may also incorporate a semiconductor top surface layer to provide an additional variable resistance across the switch 642.

Although the switches 632 and 642 of the present dual function touch switch apparatus previously disclosed, are closed substantially simultaneously, it will be appreciated that there will, in fact, be a very small delay between the time that the fourth conductor ply 638 contacts the third conductor ply 634 and the time the second conductor ply 630 contacts the first conductor ply 624. This very slight delay allows the power to be applied to the utilization circuit 644 prior to application of the input signal to the utilization circuit 644. This allows the various circuit components to be substantially fully powered and thus operational prior to the connection of input signal.

It will be appreciated that more than two switches may be stacked on top of one another in a unitary touch switch apparatus to thereby provide a multifunction touch switch apparatus without departing from the spirit of the present invention. Each such additional touch switch device may be configured in the manner previously described.

Another configuration of the present invention is shown in Figure 11 which illustrates a pressure transducer device 410 having a rigid base member 412, a folded flexible base member 414 having a lower portion 416 and an upper portion 418, a diaphragm spacer 422, a resilient deformable diaphragm 424 and a retaining ring 426.

Referring more specifically to Figure 12, the flexible base member 414 is illustrated in an unfolded configuration having a connector portion 428 extending from the lower circular portion 416 which is attached to the circular reciprocally shaped upper portion 418 by a bridge or hinge region 434. Afirst conductor 436 is disposed on the flexible base member 414 to extend from the connector portion 428 to define a contact pad 440 at a central region of the lower portion 416. A second conductor 438 is also disposed on the flexible base 414 commencing on the connector portion 428 and extending in a semicircular path around the periphery of the lower portion 416 across the hinge or bridge portion 434 and terminating at a central location in the upper portion 418 to define a contact pad 442.The first conductor 436 and the second conductor 438 are electrically insulated from one another along the surface of the flexible base member 414.

The contact pads 440 and 442 and the upper and lower portions 416 and 418 may be of any desired shape. However, both the contact pad 440 and the contact pad 442 must have a shape and must be positioned on the lower portion 416 and the upper portion 418, respectively, so that when the upper portion 418 is folded along a fold line 444, the contact pad 442 will be transversely aligned with the contact pad 440 to allow electrical conduction between the contact pad 440 and the contact pad 442 when the upper portion 418 is forced against the lower portion 416.

In orderto provide variations in the potential drop between the first conductor 436 and the second conductor 438 in response to variations in the pressure with which the upper portion 418 is pressed into contact against the lower portion 416, a first semiconducting composition layer 446 is disposed by spraying or the like to cover the first conductor 436 including the circular contact pad 440. Similarly, although not essentially, a semiconducting composi tion layer 448 is also disposed by spraying or the like to cover the second conductor 438 particularly including the contact pad 442.

The semiconductor composition preferably is a mixture of molybdenum disulfide, a resin and poss ibly powdered carbon which is thinned with a resin thinner to a sprayable consistency. Thus, a very thin layer of the semiconducting composition layer may be disposed on top of the first and second conductors.

Referring again to Figure 11, the flexible base member which may be made out of a thin (prefer ably in the range of 1/2 to 5 mils) Mylar (Registered Trade Mark) is folded into a sandwich-like configura tion with the donut-shaped spacer 420 therebetween. An adhesive material is then disposed on the top and bottom surface of the spacer 420 with the lower portion 416 and the upper portion 418 being held with the semiconducting composition covered contact pads 440 and 442 in facing but spaced apart relationship. The bottom surface 428 of the lower portion 416 of the flexible base is also adhesively affixed to the top surface 450 of the rigid base member 412.Thus, the lower portion 416 of the flexible base 414 is maintained in a rigid state by the rigid base 412 while the upper portion 418 of the flexible base 414 is transversely movable into contacting relationship with the lower portion 416.

In the embodiment shown in Figures 11 and 12 the spacer 420 is positioned to adhesively connect the lower portion 416 and the upper portion 418 of the flexible base 414 about the entire periphery or at least a substantial portion of the periphery of the two portions 416 and 418. In one embodiment, the spacer may be simply double stick tape cut in the appropriate shape.

A breathing hole 429 may also be provided between the chamber defined by the spacer 420 and the region outside the transducer 410.

The resiliently deformable diaphragm 424 is next adhesively attached to the top surface of the diaphragm spacer 422 which is adhesively attached to the upper portion 418 of the flexible base member.

The spacer 422 may be a square or rectangular cross section toroidal or donut-shaped member and may also be cut from double stick tape. Consequently, the peripheral edges of the resiliently deformable diaphragm 424 are in spaced relationship to the upper portion 418 of the flexible base member 414. However, in order to assure that the upper portion 418 is continuously responsive to both increasing and decreasing pressure forces, a central region of the resiliently deformable diaphragm 424 laterally spaced from the edges of the diaphragm spacer 422 is adhesively attached to the top of the upper portion 418 of the flexible base member 414.Thus, when an increased pressure is exerted against the diaphragm 424, the upper portion 418 will be pressed downwardly until the semiconducting composition covered contact pad 442 is in electrically conducting relationship with the semiconducting composition covered contact pad 440. The greater the force exerted against the upper portion 418 the less the contact resistance will be between the upper and lower contact pads 442 and 440 and hence the smaller the potential drop across the first and second conductors 436 and 438. As the pressure force decreases, the inherent resiliency of the diaphragm 424 which may, for example, be made out of stretchable rubber such as dam rubber, will pull the upper portion 418 in a direction away from the lower portion 416 to thereby increase the contact resistance between the lower contact pad 440 and the upper contact pad 442 until the force exerted against the diaphragm 424 is sufficiently small that contact between the upper and lower contact pads 440 and 442 is broken and resistance becomes infinite.

The resilient deformable diaphragm 424 prefer ably is adhesively held across the top of the diaphragm spacer 422 by the retaining ring 426 which is also adhesively attached around the periphery of the diaphragm 424 so that the di aphragm 424 is held in a taut or flat configuration between the retaining ring 426 and the diaphragm spacer 422.

Referring to Figures 13 and 14 an alternative embodiment of the present invention is illustrated comprising a rigid base 412 an alternative flexible base structure 460, a diaphragm spacer 422, a diaphragm 424 and a rigid retaining member 426. As in the first embodiment, the bottom surface of a lower portion 462 of the flexible base member 460 is adhesively attached to the rigid base 412. In addition, the spacer 422 adhesively attaches the diaphragm 424 to the flexible base member 460. A central region of the diaphragm 424 is then adhesively attached to an upper or flap portion 464 of the flexible base member 460.

Referring to Figure 14, the flexible base member 460 has a first generally circular shaped lower portion 462 interconnected by a hinge or bridge portion 468 to the generally circular flap portion 464 which is smaller in diameter than the lower portion 462. A spacer 466 is adhesively attached around the periphery of the lower portion 462. The spacer 466 is generally a square or rectangular cross section toroidal spacer with a central space having an area which is larger than the surface area of the flap portion 464. Thus, when the flap portion 464 is folded to overlay the lower portion 462, it will be unattached about its periphery except at the hinged portion 468. Thus, the flap portion 464 is freely transversely movable about the hinge portion 468 in the region surrounded by the spacer 466.

In a manner similar to that previously described in conjunction with Figure 12, a first conductor 470 extends from a connector portion 472 and forms a centrally located contact pad 474 in the first portion 462 of the flexible base 460. A second conductor 476 disposed on the base 460 also extends from the connector portion 472 but extends in a path around the periphery of the first portion 462 across the hinge or bridge portion 468 and forms a contact pad 478 positioned centrally in the flap portion 464. A suitable semiconducting composition layer 480 is disposed to cover at least the contact pad 474 and optionally the contact 478. The conductor pads 474 and 478 are positioned symmetrically on opposite sides of the fold line 486 so that when the flap portion 464 is folded over along the fold line 486 the contact pad 478 will be aligned in facing relationship with the contact pad 474.

To provide positive movement of the flap portion 464, both toward and away from the lower portion 462 of the flexible base in response to increases and decreases in the applied air pressure, the top surface of the flap 464 opposite the surface on which the contact pad 478 is disposed is adhesively attached to the lower surface of the diaphragm at a central location of the diaphragm laterally spaced from the inside peripheral edge of the diaphragm spacer 422.

Thus, the flap portion 464 moves as the resiliently deformable diaphragm 424 moves to thereby cause variations in the contact resistance between the contact pad 474 and the contact pad 478 in response to variations in pressure applied against the diaphragm 424.

The pressure transducer in accordance with the present invention may be utilized in any number of devices. However, one particularly advantageous use is in an electronic saxophone-like device 500, such as the one illustrated in Figure 15 which has a mouthpiece 502, an air chamber 504, and a pressure transducer 506 disposed in the end of the chamber 504 with the diaphragm facing inwardly toward the chamber 504. A plug 510 is inserted or otherwise sealed in position in the orifice end 508 of the saxophone-like device to rigidly hold the pressure transducer 506 in position. An additional pressure transducer device 512 may also be positioned at the mouthpiece to be pressed with the lips.A connector 514 is interconnected to the connector 428 or 472 (Figures 12 and 14 respectively) or to connector 532 in Figure 13 to be described hereafter, of the selected pressure transducer in accordance with the invention. An appropriate electronic tone generating circuit 516 is interconnected to the connector 514 so that, for example, the volume of the tone generated by the tone generating circuit 516 can be varied in response to variation of air pressure in the chamber 504. Thus, the harder a user blows into the mouthpiece 502 the greater the pressure in the chamber 504 and the hig her the volume generated.

Referring to Figure 16, an alternative pressure transducer in accordance with the invention is illustrated. Specifically, the pressure transducer incorporates a first support member 530 which may be flexible or rigid (e.g., a PC board), a second support member 534, and a connector portion 532 extending from the first support member 530. A spacer (not shown) is adhesively attached around the periphery of the first support member in a manner similar to that previously described in conjunction with Figure 14.

Of course, while the first support member 530 and the second support member 534 are shown as separate members, they may be a single member connected buy a hinge portion as in Figures 12 and 14 in which case the second support member adhesively attached to the diaphragm pivots about the hinge portion as the diaphragm moves in and out. However, because the second support member provides only a shunt support there is no need to provide a conductive link across the hinge in this embodiment as will be subsequently described. Hence, the second support member 534 may be detached from the first support member 530 and the second support member 534 simply adhesively attached to the diaphragm so that the second support member 534 moves with the diaphragm. A particularly convenient method of accomplishing this is to spray or silk-screen semiconducting material onto the surface of Packlon Tape which is a printable tape produced by 3M Corporation. A circular dot of this semiconductor covered tape is then stuck onto the diaphragm facing the first support member 530.

To provide a transducer device according to this shunt embodiment, a first conductor 540 is disposed, on the surface of the first support member 530 where the first conductor 540 includes a first contact member 542 with a plurality of interdigiting fingers 544 and a second contact member 546 also with a plurality of interdigiting fingers 548. The interdigiting fingers 544 and 548 are interleaved between one another in an electrically isolated relationship.

A second conductor 550 is disposed on the surface of the second support member 534 so that when the second support member 534 is adhesively fixed to the diaphragm, the second conductor portion 550 will be juxtaposed in transverse alignment with the first conductor 540.

Prior to affixing the second support member to the diaphragm, a semiconducting composition layer 552 is disposed to overlay the second conductor 550 to thereby provide a contact resistance between the first and second conductors 540 and 550 when those two conductors are depressed into electrically conducting relationship with one another by the movement of the diaphragm. Of course, it will be appreciated that the semiconducting composition layer may be disposed on either the first or the second conductors 540 or 550, respectively, or alternatively, the second conductor 550 may be made entirely from the semiconducting composition material with a separate conductor such as silver or copper eliminated.Of course, if the semiconducting layer is disposed on the first and second contact members, it is preferable that there be a laterally disposed insulating space between the semiconducting material on the two contact members. It will also be appreciated that the particular interdigiting fingers may be of any shape and may, for example, be disposed on the surface in a circular arrangement.

Thus, in this embodiment the second conductor portion acts as a shunt between the first and second contact members.

It will be appreciated that the spacers are preferably the thickness of a piece of commercially available stick tape and that the Mylar (Registered Trade Mark), in the preferred embodiment, is about 3 mils thick. The contact pads may be of any suitable size and shape and may for example be circular with a diameter of about 1/4-112 inches. Finally, in the aforedescribed embodiment where the spot of semiconductor tape is stuck to the surface of the diaphragm, only one of the spacers 420 and 422 is required.

While specific embodiments of the present invention have been described, it will be appreciated that various other modifications and laterations may be made without departing from the true spirit and scope of the invention. Consequently, it is an object of the claims to encompass all such modifications as fall within the true spirit and scope of the invention.

Claims

1. A bounceless switch apparatus having a junction resistance which varies inversely with a pressure applied normally thereto, comprising: a first conductor member; a first pressure sensitive composition layer including a particulated semiconducting material disposed for covering the first conductor member in intimate electrically conducting contact therewith, and further having a first exposed surface; a second conductor member positioned in touching but nonintimate relationship to the first exposed surface of the first pressure sensitive composition layer for providing a junction having said junction resistance.

2. A bounceless switch apparatus having a surface contact resistance which varies inversely with a pressure applied normally thereto comprising: a first conductor member; a first pressure sensitive composition layer including a particulated semiconducting material disposed for covering the first conductor member in intimate electrically conducting contact therewith and further' having a first exposed surface; a second conductor member; and a second pressure sensitive composition layer including the particulated semiconducting material disposed for covering the second conductor in intimate, electrically conducting contact therewith and further having a second exposed surface, the first and second exposed surfaces being positioned in touching but nonintimate contacting relationship with each other for providing a variable surface contact junction having said junction resistance thereacross.

3. A dual switch apparatus defining two independent switches simultaneously actuated in response to a single transverse force comprising: a first support member; a first conductor disposed on the first support member; a second connector disposed on the first support member; a second support member; a third conductor disposed on the second support member; a fourth conductor disposed on the second support member;; the first and second support members juxtaposed opposite one another in normally spaced apart relationship with the first and third conductors and the second and fourth conductors laterally spaced in simultaneous actuating proximity, the first and third conductors transversely movable into electrical conducting relationship and the second and fourth conductors transversely movable into electrical conducting relationship in response to application of the single transverse force, the first and third conductors defining a first switch and the second and fourth conductors defining a second switch; and a pressure responsive semiconducting composition disposed for providing a contact resistance across at least one of the first and second switches, the contact resistance varying in response to variations in the magnitude of the single transverse force.

4. A dual switch apparatus defining two independent switches simultaneously actuated in response to a single transverse force comprising: a foldable support member having a first portion and a second portion; a first conductor disposed on the support member and defining a first pattern on the first portion; a second conductor disposed on the support member and defining a second pattern on the first portion; a third conductor disposed on the second portion of the support member generally in the miror image of the first pattern; a fourth conductor disposed on the second portion of the support member generally in the mirror image of in the second pattern; and a pressure responsive semiconducting composition disposed for overlying at least one of the first, second, third and fourth conductors for providing a contact resistor thereon; the support member being folded for transversely aligning the first and third conductors and the second and fourth conductors in normally spaced apart relationship, the pair of the first and third conductors and the pair of the second and fourth conductors being laterally positioned in simultaneous actuating proximity, the first and third conductors transversely movable into electrically conducting relationship and the second and fourth conductors transversely movable into electrically conducting relationship in response to the single transverse force.

5. A tone generating device comprising: a switch apparatus defining a pair of switches simultaneously actuated in response to a single transverse force, the switch apparatus comprising: a first support member; a first conductor disposed on the first support member; a second conductor disposed on the first support member; a second support member; a third conductor disposed on the second support member; a fourth conductor disposed on the second support member;; the first and second support members juxtaposed opposite one another in normally spaced apart relationship with the first and third conductors and the second and fourth conductors transversely aligned and laterally spaced in simultaneously actuating proximity, the first and third conductors transversely movable into electrically conducting relationship and the second and fourth conductors transversely movable into electrically conducting relationship in response to the application of the single transverse force; and a pressure responsive semiconducting composition disposed between at least one of the first and third pair of conductors and the second and fourth pair of conductors for providing a contact resistance thereacross, the contact resistance varying in response to variations in the magnitude of the single transverse force; a first utilization circuit coupled between the first and third conductors; and a second utilization circuit coupled between the second and fourth conductors.

6. A tone generating device comprising: a dual switch apparatus defining a pair of switches simultaneously actuated in response to a single transverse force, the dual switch apparatus comprising: a foldable support member having a first portion and a second portion; a first conductor disposed on the first portion of the support member; a second conductor disposed on the first portion of the support member; a third conductor disposed on the second portion of the support member; a fourth conductor disposed on the second portion of the support member; and a pressure responsive semiconductor composition disposed for overlaying at least one of the first, second, third and fourth conductors for providing a contact resistance thereon; the support member being folded for transversely aligning the first and third conductors with the second and fourth conductors in normally spaced apart relationship, the first and third conductors defining a first of the pair of switches, the first and third conductors transversely movable into electrical conducting relationship, and the second and fourth conductors, defining the second of the pair of switches, being transversely movable into electrically conducting relationship, the first and second switches being simultaneously actuated in response to the single transverse force; a first utilization circuit coupled between the first and third conductors; and a second utilization circuit coupled between the second and fourth conductors.

7. A multiple touch switch apparatus for being selectively actuated in response to the application of at least one transverse force comprising: a first support ply having a top surface; at least one multiple segment conductor ply positioned on the top surface of the first support member, comprising:: a plurality of first electrically isolated conductor segments immediately adjacent but laterally displaced from one another and having a surface area whereby a selected one or more of the first electrically isolated conductor segments is simultaneously contacted in response to the application of a single transverse touch force; a second support member having a top surface and a bottom surface; a unitary conduction ply positioned on the bottom surface facing and transversely spaced from the at least one multiple segment conduction ply, the second support ply and unitary conduction ply being resiliently deformable for deforming the unitary conduction ply into electrical contacting relationship with at least one selected multiple segment conduction ply in response to the application of the transverse force, the unitary conduction ply comprising: : a first conductive layer positioned on the bottom surface of the second support ply, and a first semiconductor composition layer positioned on the first conductive layer for facing the at least one multiple segment conductor ply; and a transverse spacer positioned laterally between each multiple segment conductor ply and transversely between the first and second support members for spacing the unitary conduction ply from the at least one multiple segment conductor ply.

8. A multiple touch switch apparatus for being selectively actuated in response to the application of at least one transverse force comprising: a first support member having a top surface; at least one multiple segment conductor ply positioned on the top surface of the first support member comprising:: a plurality of first electrically isolated conductor segments immediately adjacent but laterally displaced from one another and having a surface area whereby a selected one or more of the first electrically isolated conductor segments is simultaneously contacted in response to the application of the single transverse touch force; a second support member having a top surface and a bottom surface; a first conductor layer positioned on the bottom surface of the second support member and having a plurality of conducting regions, such region being juxtaposed opposite one of the first electrically isolated conductor segments;; a resistor network for being electrically interconnected between the juxtaposed first electrically isolated conductor segments and conducting regions of the first conductor layer when the transverse force is applied to the second support member, the second support member and the first conductor layer being resiliently deformable in response to the application of the transverse force; transverse spacer means positioned laterally between each multiple segment conductor ply and transversely between the first and second support members for spacing the first conductor layer from the multiple segment conductor plies.

9. A multiple touch switch apparatus for being selectively activated in response to the application of at least one transverse force comprising: a first support member having a top surface; a plurality of first electrically isolated conductor segments laterally displaced from one another, each being responsive to the application of a transverse force; a second support member having a top surface and a bottom surface; a unitary conduction ply positioned on the bottom surface facing but transversely spaced from the plurality of first electrically isolated conductor segments, the second support member and the unitary conduction ply being resiliently deformable for deforming the unitary conduction ply into electrically contacting relationship with at least a selected one of the first electrically isolated conductor segments, the unitary conduction ply comprising:: a first conductive layer positioned on the bottom surface of the second support member, and a first semiconductor composition layer positioned on the first conductive layer for facing the plurality of first electrically isolated conductor segments; and a transverse spacer positioned laterally between each first electrically isolated conductor segment and transversely between the first and second support members for spacing the unitary conduction ply from the plurality of first electrically isolated conductor segments.

10. A multiple touch switch apparatus for being selectively activated in response to the application of at least one transverse force comprising: a first support member having a top surface; a plurality of first electrically isolated conductor segments laterally displaced from one another, each being responsive to the application of a transverse force, each first electrically isolated conductor segment comprising:: a first conductive layer positioned on the top surface of the first support member, and a first semiconductor composition layer positioned on the first conductive layer; a second support member having a top surface and a bottom surface; a unitary conduction ply positioned on the bottom surface facing but transversely spaced from the plurality of first electrically isolated conductor segments, the second support member and the unitary conduction ply being resiliently deformable for deforming the unitary conduction ply into electrically contacting relationship with at least one selected first electrically isolated conductor segment in response to the application of the transverse force; and transverse spacer means positioned laterally between each first electrically isolated conductor segment and transversely between the first and second support members for spacing the unitary conduction ply from the plurality of first electrically isolated conductor segments.

11. A pressure transducer device comprising: a housing defining a chamber with a bottom surface and side walls; a first conductor positioned adjacent the bottom surface of the chamber; a flap having an upper and lower surface generally parallel with the bottom surface and a hinge region for movably attaching the flap at a spaced location above the bottom surface to extend from a sidewall into the chamber, the flap being movable in the chamber about the hinge region; a second conductor disposed on the lower surface of the flap; a pressure responsive semiconducting composition layer disposed for covering at least one of the first conductor and the second conductor; and a diaphragm attached about its periphery to the housing in spaced relationship to the bottom surface for enclosing the chamber, the diaphragm adhesively attached to the upper surface of the flap at a center region laterally spaced from the housing, the second conductor being variably movable with the flap into electrically conducting relationship with the first conductor by the diaphragm in response to variations in pressure force exerted against the diaphragm.

12. A pressure transducer device comprising: a first member; a first conductive contact disposed on the first member; a second member; a second conductive contact disposed on the second member, the second conductive contact being normally spaced from the first conductive contact for being movable into electrically conduct ing relationship with the first conductive contact; pressure responsive semiconducting composition covering at least one of the first and second conductive contacts on the first and second members for providing a variable contact resistance between the flrs; and second conductive contacts;; a diaphragm resiliently and variably movable in response to variations in pressure exerted thereagainst, the diaphragm attached about its periphery to the second member in spaced relationship thereto and attached at a center region to the second member whereby the second conductive contact is movable with the diaphragm into electrically conducting relationship with the first conductive contact.

13. A pressure transducer device comprising: a base structure; a first conductor fixed to the base structure; a first spacer having a central spacer fixed to the base structure surrounding the first conductor; a flap having a hinged portion attached to the first spacer in spaced relationship to the first conductor, the flap having an upper and a lower surface; a second conductor disposed on the bottom surface of the flap facing the first conductor, the second conductor being transversely movable with the flap into contacting relationship with the first conductor; a pressure responsive semiconducting composition layer disposed for covering at least one of the first and the second conductors; a second spacer having a central space fixed to the first spacer surrounding the flap with said hinge portion held between the first spacer and the second spacer;; a diaphragm fixed about its periphery to the periphery of the second spacer over the central space of the second spacer for defining an enclosed chamber with the flap therein, the upper surface of the flap being adhesively attached to the diaphragm at a center region thereof which is laterally spaced from the second spacer, the second conductor being movable with the flap into electrically conducting relationship with the first conductor by the diaphragm in response to a pressure force exerted against the diaphragm.

14. A pressure transducer device comprising; a rigid base member; a flexible base member foldable to define an upper portion having a top and a bottom surface, and a lower portion, the lower portion being fixed to the rigid base member; a first conductor disposed on the flexible base member at a first location on the lower portion; a second conductor disposed on the flexible base member at a second location on the bottom surface of the upper portion; a semiconducting composition layer disposed to cover at least one of the first and second conductors, the flexible base member folded for positioning the second conductor to face the first conductor;; a first spacer fixed to the flexible base member for spacing the upper portion of the flexible base member from the lower portion of the flexible base member, the upper portion being movable into contacting relationship with the lower portion; a second spacer fixed to the top surface of the upper portion of the flexible base about the periphery thereof; and a diaphragm fixed about its periphery to the second spacer at a location transversely spaced from the upper portion of the flexible base, the diaphragm being attached to the top surface of the upper portion of the flexible base at a central location laterally spaced from the second spacer.

15. A pressure transducer device comprising: a house defining a chamber with a bottom surface and side walls; a first conductor positioned adjacent the bottom surface of the chamber; a diaphragm attached about its periphery to the housing in spaced relationship to the bottom surface for enclosing the chamber; a first support member adhesively attached to the diaphragm at a center region thereof laterally spaced from the housing; a second conductor disposed on the first support member, the second conductor being variably movable with the flap into electrically conducting relationship with the first conductor by the diaphragm in response to variations in pressure force exerted against the diaphragm; and a pressure responsive semiconducting composition layer disposed for covering at least one of the first conductor and the second conductor.

16. A dual function, touch switch apparatus comprising, in stacked configuration: a first support member having a top surface; a first conductor ply positioned on the top surface of the first support member; a second support member having a bottom surface facing the top surface of the first support member and having a top surface, the second support member being spaced from the first support member; a second conductor ply juxtaposed opposite the first conductor ply and affixed on the bottom surface of the second support member, in normally spacedapart relationship for defining a first switch; at least one of the first and second conductor plies, comprising: : a first conductor layer attached to the adjacent one of the first and second support members, and a first semiconductor layer affixed on the first conductor layer and juxtaposed opposite the spaced-apart other of the first and second support members; a third conductor ply on the top surface of the second support member; a third support member having a top surface and a bottom surface facing but spaced from the top surface of the second support member; and a fourth conductor ply on the bottom surface of the third support member and juxtaposed opposite the third conductor ply in normally spaced-apart relationship thereto for defining a second switch, at least the second and third support members being resiliently deformable in response to the application of a transverse force for making electrical contact between the first and second conductor plies and between the third and fourth conductor plies.

17. A multi-function touch switch apparatus comprising a plurality of juxtaposed touch switches in a stacked configuration for being closed in response to a single transverse touch force, each touch switch comprising: a first conductor ply; and a second conductor ply juxtaposed opposite the first conductor ply in normally spaced-apart relationship thereto, at least one of the first and second conductor plies being resiliently deformable into electrically contacting relationship to the other of the first and second conductor plies by the transverse touch force, each juxtaposed stacked touch switch being electrically isolated from the remaining touch switches.

18. A pressure responsive transducer comprising: a base member; a first contact on the base member; a second contact in laterally spaced relationship to the first contact on the base member; a resilient cover having at least one crease formed therein for resiliently spacing at least a portion of the cover above the base member; ; a semiconducting layer on the portion of the cover spaced above the base in shunting relationship to the first and second contacts comprising at least a pressure sensitive semiconductor particulate material, the semiconducting layer having an exposed surface disposed in normally spaced relationship with the first and second contacts, and semiconducting layer being responsive to an external pressing force for causing the exposed surface of the semiconducting layer to come into electrically shunting relationship between the first and second contacts for providing an electrically resistive junction region between the first and second contacts along the exposed surface, the resistance across the electrically resistive junction region varying in response to variations in the external pressing force.