GB2060998B - Semiconductor annealing - Google Patents

Semiconductor annealing

Info

Publication number
GB2060998B
GB2060998B GB7936041A GB7936041A GB2060998B GB 2060998 B GB2060998 B GB 2060998B GB 7936041 A GB7936041 A GB 7936041A GB 7936041 A GB7936041 A GB 7936041A GB 2060998 B GB2060998 B GB 2060998B
Authority
GB
United Kingdom
Prior art keywords
semiconductor annealing
annealing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7936041A
Other languages
English (en)
Other versions
GB2060998A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Industries Ltd
Original Assignee
ITT Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Industries Ltd filed Critical ITT Industries Ltd
Priority to GB7936041A priority Critical patent/GB2060998B/en
Priority to US06/195,688 priority patent/US4350537A/en
Priority to DE8080303617T priority patent/DE3065706D1/de
Priority to EP80303617A priority patent/EP0027712B1/en
Priority to JP14373780A priority patent/JPS5681928A/ja
Priority to IE2151/80A priority patent/IE50301B1/en
Publication of GB2060998A publication Critical patent/GB2060998A/en
Application granted granted Critical
Publication of GB2060998B publication Critical patent/GB2060998B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
GB7936041A 1979-10-17 1979-10-17 Semiconductor annealing Expired GB2060998B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB7936041A GB2060998B (en) 1979-10-17 1979-10-17 Semiconductor annealing
US06/195,688 US4350537A (en) 1979-10-17 1980-10-09 Semiconductor annealing by pulsed heating
DE8080303617T DE3065706D1 (en) 1979-10-17 1980-10-14 Semiconductor annealing
EP80303617A EP0027712B1 (en) 1979-10-17 1980-10-14 Semiconductor annealing
JP14373780A JPS5681928A (en) 1979-10-17 1980-10-16 Semiconductor annealing treatment
IE2151/80A IE50301B1 (en) 1979-10-17 1980-10-16 Semiconductor annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7936041A GB2060998B (en) 1979-10-17 1979-10-17 Semiconductor annealing

Publications (2)

Publication Number Publication Date
GB2060998A GB2060998A (en) 1981-05-07
GB2060998B true GB2060998B (en) 1983-12-14

Family

ID=10508570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7936041A Expired GB2060998B (en) 1979-10-17 1979-10-17 Semiconductor annealing

Country Status (2)

Country Link
JP (1) JPS5681928A (enExample)
GB (1) GB2060998B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833832A (ja) * 1981-08-25 1983-02-28 Fujitsu Ltd 加熱処理方法
GB2160355B (en) * 1984-05-16 1988-01-13 Plessey Co Plc Annealing semiconductor devices
JPS6186936U (enExample) * 1984-11-12 1986-06-07
JPS61189157A (ja) * 1985-02-15 1986-08-22 Sanyo Electric Co Ltd マグネツト着磁装置
JPS61145469U (enExample) * 1985-02-28 1986-09-08
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
JP2979550B2 (ja) * 1989-05-24 1999-11-15 ソニー株式会社 ランプアニール装置
JPH11145147A (ja) 1997-11-11 1999-05-28 Nec Corp 半導体装置および半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126260A (en) * 1977-04-11 1978-11-04 Toshiba Corp Vapor phase reaction heating susceptor of semiconductor

Also Published As

Publication number Publication date
GB2060998A (en) 1981-05-07
JPS6139731B2 (enExample) 1986-09-05
JPS5681928A (en) 1981-07-04

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19991016