JPS5681928A - Semiconductor annealing treatment - Google Patents

Semiconductor annealing treatment

Info

Publication number
JPS5681928A
JPS5681928A JP14373780A JP14373780A JPS5681928A JP S5681928 A JPS5681928 A JP S5681928A JP 14373780 A JP14373780 A JP 14373780A JP 14373780 A JP14373780 A JP 14373780A JP S5681928 A JPS5681928 A JP S5681928A
Authority
JP
Japan
Prior art keywords
annealing treatment
semiconductor annealing
semiconductor
treatment
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14373780A
Other languages
Japanese (ja)
Other versions
JPS6139731B2 (en
Inventor
Maikeru Yangu Jiyon
Denisu Sukoberu Piitaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5681928A publication Critical patent/JPS5681928A/en
Publication of JPS6139731B2 publication Critical patent/JPS6139731B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP14373780A 1979-10-17 1980-10-16 Semiconductor annealing treatment Granted JPS5681928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7936041A GB2060998B (en) 1979-10-17 1979-10-17 Semiconductor annealing

Publications (2)

Publication Number Publication Date
JPS5681928A true JPS5681928A (en) 1981-07-04
JPS6139731B2 JPS6139731B2 (en) 1986-09-05

Family

ID=10508570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14373780A Granted JPS5681928A (en) 1979-10-17 1980-10-16 Semiconductor annealing treatment

Country Status (2)

Country Link
JP (1) JPS5681928A (en)
GB (1) GB2060998B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833832A (en) * 1981-08-25 1983-02-28 Fujitsu Ltd Heating process
JPS6186936U (en) * 1984-11-12 1986-06-07
JPS61189157A (en) * 1985-02-15 1986-08-22 Sanyo Electric Co Ltd Magnet magnetizing device
JPS61145469U (en) * 1985-02-28 1986-09-08
JPH02309629A (en) * 1989-05-24 1990-12-25 Sony Corp Lamp annealing method and lamp annealing device used therefor
US6325848B1 (en) 1997-11-11 2001-12-04 Nec Corporation Method of making a silicon substrate with controlled impurity concentration

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2160355B (en) * 1984-05-16 1988-01-13 Plessey Co Plc Annealing semiconductor devices
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126260A (en) * 1977-04-11 1978-11-04 Toshiba Corp Vapor phase reaction heating susceptor of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126260A (en) * 1977-04-11 1978-11-04 Toshiba Corp Vapor phase reaction heating susceptor of semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833832A (en) * 1981-08-25 1983-02-28 Fujitsu Ltd Heating process
JPH025293B2 (en) * 1981-08-25 1990-02-01 Fujitsu Ltd
JPS6186936U (en) * 1984-11-12 1986-06-07
JPS61189157A (en) * 1985-02-15 1986-08-22 Sanyo Electric Co Ltd Magnet magnetizing device
JPS61145469U (en) * 1985-02-28 1986-09-08
JPH02309629A (en) * 1989-05-24 1990-12-25 Sony Corp Lamp annealing method and lamp annealing device used therefor
US6325848B1 (en) 1997-11-11 2001-12-04 Nec Corporation Method of making a silicon substrate with controlled impurity concentration

Also Published As

Publication number Publication date
GB2060998A (en) 1981-05-07
JPS6139731B2 (en) 1986-09-05
GB2060998B (en) 1983-12-14

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