JPS5681928A - Semiconductor annealing treatment - Google Patents
Semiconductor annealing treatmentInfo
- Publication number
- JPS5681928A JPS5681928A JP14373780A JP14373780A JPS5681928A JP S5681928 A JPS5681928 A JP S5681928A JP 14373780 A JP14373780 A JP 14373780A JP 14373780 A JP14373780 A JP 14373780A JP S5681928 A JPS5681928 A JP S5681928A
- Authority
- JP
- Japan
- Prior art keywords
- annealing treatment
- semiconductor annealing
- semiconductor
- treatment
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7936041A GB2060998B (en) | 1979-10-17 | 1979-10-17 | Semiconductor annealing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5681928A true JPS5681928A (en) | 1981-07-04 |
JPS6139731B2 JPS6139731B2 (en) | 1986-09-05 |
Family
ID=10508570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14373780A Granted JPS5681928A (en) | 1979-10-17 | 1980-10-16 | Semiconductor annealing treatment |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5681928A (en) |
GB (1) | GB2060998B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5833832A (en) * | 1981-08-25 | 1983-02-28 | Fujitsu Ltd | Heating process |
JPS6186936U (en) * | 1984-11-12 | 1986-06-07 | ||
JPS61189157A (en) * | 1985-02-15 | 1986-08-22 | Sanyo Electric Co Ltd | Magnet magnetizing device |
JPS61145469U (en) * | 1985-02-28 | 1986-09-08 | ||
JPH02309629A (en) * | 1989-05-24 | 1990-12-25 | Sony Corp | Lamp annealing method and lamp annealing device used therefor |
US6325848B1 (en) | 1997-11-11 | 2001-12-04 | Nec Corporation | Method of making a silicon substrate with controlled impurity concentration |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2160355B (en) * | 1984-05-16 | 1988-01-13 | Plessey Co Plc | Annealing semiconductor devices |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53126260A (en) * | 1977-04-11 | 1978-11-04 | Toshiba Corp | Vapor phase reaction heating susceptor of semiconductor |
-
1979
- 1979-10-17 GB GB7936041A patent/GB2060998B/en not_active Expired
-
1980
- 1980-10-16 JP JP14373780A patent/JPS5681928A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53126260A (en) * | 1977-04-11 | 1978-11-04 | Toshiba Corp | Vapor phase reaction heating susceptor of semiconductor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5833832A (en) * | 1981-08-25 | 1983-02-28 | Fujitsu Ltd | Heating process |
JPH025293B2 (en) * | 1981-08-25 | 1990-02-01 | Fujitsu Ltd | |
JPS6186936U (en) * | 1984-11-12 | 1986-06-07 | ||
JPS61189157A (en) * | 1985-02-15 | 1986-08-22 | Sanyo Electric Co Ltd | Magnet magnetizing device |
JPS61145469U (en) * | 1985-02-28 | 1986-09-08 | ||
JPH02309629A (en) * | 1989-05-24 | 1990-12-25 | Sony Corp | Lamp annealing method and lamp annealing device used therefor |
US6325848B1 (en) | 1997-11-11 | 2001-12-04 | Nec Corporation | Method of making a silicon substrate with controlled impurity concentration |
Also Published As
Publication number | Publication date |
---|---|
GB2060998A (en) | 1981-05-07 |
JPS6139731B2 (en) | 1986-09-05 |
GB2060998B (en) | 1983-12-14 |
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