GB2049273B - Method for short-circuting igfet source regions to a substrate - Google Patents

Method for short-circuting igfet source regions to a substrate

Info

Publication number
GB2049273B
GB2049273B GB7915232A GB7915232A GB2049273B GB 2049273 B GB2049273 B GB 2049273B GB 7915232 A GB7915232 A GB 7915232A GB 7915232 A GB7915232 A GB 7915232A GB 2049273 B GB2049273 B GB 2049273B
Authority
GB
United Kingdom
Prior art keywords
circuting
substrate
short
source regions
igfet source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7915232A
Other languages
English (en)
Other versions
GB2049273A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB7915232A priority Critical patent/GB2049273B/en
Priority to AU57707/80A priority patent/AU536540B2/en
Priority to DE3015782A priority patent/DE3015782C2/de
Priority to CA000350554A priority patent/CA1150853A/en
Priority to NL8002468A priority patent/NL8002468A/nl
Priority to FR8009840A priority patent/FR2455799A1/fr
Priority to JP5937580A priority patent/JPS55150275A/ja
Publication of GB2049273A publication Critical patent/GB2049273A/en
Priority to US06/407,673 priority patent/US4408384A/en
Application granted granted Critical
Publication of GB2049273B publication Critical patent/GB2049273B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
GB7915232A 1979-05-02 1979-05-02 Method for short-circuting igfet source regions to a substrate Expired GB2049273B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB7915232A GB2049273B (en) 1979-05-02 1979-05-02 Method for short-circuting igfet source regions to a substrate
AU57707/80A AU536540B2 (en) 1979-05-02 1980-04-23 Insulated-gate field-effect transistor and method of of manufacturing same
CA000350554A CA1150853A (en) 1979-05-02 1980-04-24 Insulated-gate field-effect transistor and method of manufacturing same
DE3015782A DE3015782C2 (de) 1979-05-02 1980-04-24 Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Steuerelektrode
NL8002468A NL8002468A (nl) 1979-05-02 1980-04-28 Veldeffekttransistor met geisoleerde stuurelektrode, en werkwijze ter vervaardiging daarvan.
FR8009840A FR2455799A1 (fr) 1979-05-02 1980-04-30 Transistor a effet de champ a electrode de grille isolee et procede pour la fabrication de ce transistor
JP5937580A JPS55150275A (en) 1979-05-02 1980-05-02 Insulated gate field effect transistor and method of fabricating same
US06/407,673 US4408384A (en) 1979-05-02 1982-08-12 Method of manufacturing an insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7915232A GB2049273B (en) 1979-05-02 1979-05-02 Method for short-circuting igfet source regions to a substrate

Publications (2)

Publication Number Publication Date
GB2049273A GB2049273A (en) 1980-12-17
GB2049273B true GB2049273B (en) 1983-05-25

Family

ID=10504901

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7915232A Expired GB2049273B (en) 1979-05-02 1979-05-02 Method for short-circuting igfet source regions to a substrate

Country Status (8)

Country Link
US (1) US4408384A (OSRAM)
JP (1) JPS55150275A (OSRAM)
AU (1) AU536540B2 (OSRAM)
CA (1) CA1150853A (OSRAM)
DE (1) DE3015782C2 (OSRAM)
FR (1) FR2455799A1 (OSRAM)
GB (1) GB2049273B (OSRAM)
NL (1) NL8002468A (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
NL8204105A (nl) * 1982-10-25 1984-05-16 Philips Nv Halfgeleiderinrichting.
DE3245457A1 (de) * 1982-12-08 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Halbleiterelement mit kontaktloch
DE3402867A1 (de) * 1984-01-27 1985-08-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit kontaktloch
JPH0758782B2 (ja) * 1986-03-19 1995-06-21 株式会社東芝 半導体装置
US4757029A (en) * 1987-05-04 1988-07-12 Motorola Inc. Method of making vertical field effect transistor with plurality of gate input cnnections
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
EP0714135B1 (en) * 1994-11-08 1999-01-13 STMicroelectronics S.r.l. Integrated device with a structure for protection against high electric fields
JPH10223775A (ja) * 1997-01-31 1998-08-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP3129223B2 (ja) * 1997-02-28 2001-01-29 日本電気株式会社 半導体装置
US6297533B1 (en) * 1997-12-04 2001-10-02 The Whitaker Corporation LDMOS structure with via grounded source
DE69938776D1 (de) * 1998-02-07 2008-07-03 Sirenza Microdevices Inc Rf-mos-transistor
GB9903607D0 (en) * 1999-02-17 1999-04-07 Koninkl Philips Electronics Nv Insulated-gate field-effect semiconductor device
US6541820B1 (en) * 2000-03-28 2003-04-01 International Rectifier Corporation Low voltage planar power MOSFET with serpentine gate pattern
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1254302A (en) * 1968-03-11 1971-11-17 Associated Semiconductor Mft Improvements in insulated gate field effect transistors
US4003126A (en) * 1974-09-12 1977-01-18 Canadian Patents And Development Limited Method of making metal oxide semiconductor devices
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
FR2362492A1 (fr) * 1976-08-19 1978-03-17 Thomson Csf Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistor
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5365078A (en) * 1976-11-24 1978-06-10 Toshiba Corp Production of junction type field effect transistor
DE2737073C3 (de) * 1977-08-17 1981-09-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle
DE2738008A1 (de) * 1977-08-23 1979-03-01 Siemens Ag Verfahren zum herstellen einer eintransistor-speicherzelle
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US4198693A (en) * 1978-03-20 1980-04-15 Texas Instruments Incorporated VMOS Read only memory
US4200968A (en) * 1978-08-09 1980-05-06 Harris Corporation VMOS transistor and method of fabrication
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same

Also Published As

Publication number Publication date
DE3015782A1 (de) 1980-11-13
NL8002468A (nl) 1980-11-04
AU536540B2 (en) 1984-05-10
FR2455799A1 (fr) 1980-11-28
CA1150853A (en) 1983-07-26
US4408384A (en) 1983-10-11
JPS55150275A (en) 1980-11-22
FR2455799B1 (OSRAM) 1984-07-27
JPS6156874B2 (OSRAM) 1986-12-04
GB2049273A (en) 1980-12-17
AU5770780A (en) 1980-11-06
DE3015782C2 (de) 1986-07-03

Similar Documents

Publication Publication Date Title
GB2054405B (en) Method for producing a single crystal
DE3068284D1 (en) Method for manufacturing a flocked substrate
ZA795987B (en) Process for purifiying silicon
GB2049273B (en) Method for short-circuting igfet source regions to a substrate
PH17210A (en) Process for making plaster board
RO82678A (ro) Procedeu de preparare a unei compozitii
GB2037807B (en) Process for treating waste oil
GB2035827B (en) Process for treating waste gases
DE2964631D1 (en) Method for producing a semiconductor film
DE3472574D1 (en) Process for forming an organic thin film
PH19618A (en) Process for preparing -2-pyrrolidone
HU182108B (en) Process for reducing metal-alkoxides
YU83282A (en) Process for preparing organic sulfides
DE2960087D1 (en) Colour-photographic developing process
GB2025991B (en) Photopolymerization process
DE2961903D1 (en) Method for treating boron-containing steel
YU40573B (en) Process for producing isopropenylphenol
JPS553309A (en) Apparatus for manufacturing citriccaciddsoluble potassium silicate fertilizer
GB2051802B (en) Process for producing methylisobutylketone
YU67679A (en) Process for obtaining dilignol like compounds
YU169481A (en) Process for producing n-cyclohexyl benzothiazole -2-sulfene-amides
YU41140B (en) Process for obtainig maltose crystals
JPS5548324A (en) Sprouting process for regular shimejiimushroom
DE2862240D1 (en) Process for treating organic waste
DE3066155D1 (en) Process for setting a polychloroprene-latex

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940502