GB2043346B - Low noise multistage avalanche photodetector - Google Patents

Low noise multistage avalanche photodetector

Info

Publication number
GB2043346B
GB2043346B GB8016844A GB8016844A GB2043346B GB 2043346 B GB2043346 B GB 2043346B GB 8016844 A GB8016844 A GB 8016844A GB 8016844 A GB8016844 A GB 8016844A GB 2043346 B GB2043346 B GB 2043346B
Authority
GB
United Kingdom
Prior art keywords
low noise
avalanche photodetector
noise multistage
multistage avalanche
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8016844A
Other languages
English (en)
Other versions
GB2043346A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2043346A publication Critical patent/GB2043346A/en
Application granted granted Critical
Publication of GB2043346B publication Critical patent/GB2043346B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
GB8016844A 1978-10-06 1979-09-21 Low noise multistage avalanche photodetector Expired GB2043346B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/949,057 US4203124A (en) 1978-10-06 1978-10-06 Low noise multistage avalanche photodetector

Publications (2)

Publication Number Publication Date
GB2043346A GB2043346A (en) 1980-10-01
GB2043346B true GB2043346B (en) 1982-05-06

Family

ID=25488536

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8016844A Expired GB2043346B (en) 1978-10-06 1979-09-21 Low noise multistage avalanche photodetector

Country Status (12)

Country Link
US (1) US4203124A (enExample)
JP (1) JPS55500788A (enExample)
AU (1) AU522867B2 (enExample)
BE (1) BE879196A (enExample)
CA (1) CA1135823A (enExample)
ES (1) ES484787A1 (enExample)
FR (1) FR2438343A1 (enExample)
GB (1) GB2043346B (enExample)
IT (1) IT7968943A0 (enExample)
NL (1) NL7920079A (enExample)
SE (1) SE8004005L (enExample)
WO (1) WO1980000765A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector
US4486765A (en) * 1981-12-07 1984-12-04 At&T Bell Laboratories Avalanche photodetector including means for separating electrons and holes
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
US4599632A (en) * 1982-08-30 1986-07-08 At&T Bell Laboratories Photodetector with graded bandgap region
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
US4620214A (en) * 1983-12-02 1986-10-28 California Institute Of Technology Multiple quantum-well infrared detector
US4530752A (en) * 1984-06-20 1985-07-23 Union Oil Company Of California Oil shale retorting process
JPH01183174A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd 半導体受光素子
US5121181A (en) * 1989-01-31 1992-06-09 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications
US5959339A (en) * 1996-03-19 1999-09-28 Raytheon Company Simultaneous two-wavelength p-n-p-n Infrared detector
US6870239B1 (en) * 2003-04-04 2005-03-22 Solid State Scientific Corporation Avalanche photodiode having an extrinsic absorption region
RU2386192C1 (ru) * 2008-08-20 2010-04-10 Александр Иванович Патрашин Многокаскадный лавинный фотодетектор
US8279411B2 (en) * 2008-08-27 2012-10-02 The Boeing Company Systems and methods for reducing crosstalk in an avalanche photodiode detector array
US9395182B1 (en) 2011-03-03 2016-07-19 The Boeing Company Methods and systems for reducing crosstalk in avalanche photodiode detector arrays

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US3369132A (en) * 1962-11-14 1968-02-13 Ibm Opto-electronic semiconductor devices
US3757174A (en) * 1972-07-31 1973-09-04 Sharp Kk Light emitting four layer semiconductor
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US3928261A (en) * 1973-05-17 1975-12-23 Minnesota Mining & Mfg Water removable film-forming compositions for topical application to skin
JPS5758075B2 (enExample) * 1974-10-19 1982-12-08 Sony Corp
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4110778A (en) * 1977-06-21 1978-08-29 The United States Of America As Represented By The Secretary Of The Air Force Narrow-band inverted homo-heterojunction avalanche photodiode

Also Published As

Publication number Publication date
SE8004005L (sv) 1980-05-29
FR2438343A1 (fr) 1980-04-30
AU522867B2 (en) 1982-07-01
AU5147879A (en) 1980-04-17
JPS55500788A (enExample) 1980-10-16
CA1135823A (en) 1982-11-16
WO1980000765A1 (en) 1980-04-17
GB2043346A (en) 1980-10-01
FR2438343B1 (enExample) 1981-05-29
US4203124A (en) 1980-05-13
NL7920079A (nl) 1980-08-29
IT7968943A0 (it) 1979-10-05
ES484787A1 (es) 1980-10-01
BE879196A (fr) 1980-02-01

Similar Documents

Publication Publication Date Title
DE3176503D1 (en) Avalanche photodiodes
DE3172668D1 (en) Avalanche photodiodes
JPS5481094A (en) Semiconductor photodetector
GB2043346B (en) Low noise multistage avalanche photodetector
DE2965982D1 (en) Photosensor
GB2020800B (en) Optoelectronic focuserror detection
GB1549923A (en) Multistage depressed collector
GB2100928B (en) Long-wavelength avalanche photodetector
GB2002579B (en) Avalanche diode
JPS54147066A (en) Level detector
NL7904417A (nl) Uittrekgeleiding.
GB2016842B (en) Noise reduction circuit
GB2157490B (en) Avalanche photodetector
DE3278660D1 (en) Avalanche photodiode
JPS54117657A (en) Multistage attenuator
DE2963494D1 (en) Variable level converter
JPS54111177A (en) Multistage filter
JPS5524301A (en) Photosensor
DE2953165A1 (de) Low noise multistage avalanche photodetector
AU6226980A (en) Multistage avalanche photodetector
JPS548990A (en) Avalanche diode
GB2016686B (en) Photocurrent amplifier
GB2020850B (en) Vortex diode
JPS5543733A (en) Multistage elevator
JPS54109792A (en) Variable capacity diode

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee