FR2438343B1 - - Google Patents
Info
- Publication number
- FR2438343B1 FR2438343B1 FR7924886A FR7924886A FR2438343B1 FR 2438343 B1 FR2438343 B1 FR 2438343B1 FR 7924886 A FR7924886 A FR 7924886A FR 7924886 A FR7924886 A FR 7924886A FR 2438343 B1 FR2438343 B1 FR 2438343B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/949,057 US4203124A (en) | 1978-10-06 | 1978-10-06 | Low noise multistage avalanche photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2438343A1 FR2438343A1 (fr) | 1980-04-30 |
| FR2438343B1 true FR2438343B1 (enExample) | 1981-05-29 |
Family
ID=25488536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7924886A Granted FR2438343A1 (fr) | 1978-10-06 | 1979-10-05 | Dispositif a semi-conducteur utilisable notamment pour des photodetecteurs a avalanche |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4203124A (enExample) |
| JP (1) | JPS55500788A (enExample) |
| AU (1) | AU522867B2 (enExample) |
| BE (1) | BE879196A (enExample) |
| CA (1) | CA1135823A (enExample) |
| ES (1) | ES484787A1 (enExample) |
| FR (1) | FR2438343A1 (enExample) |
| GB (1) | GB2043346B (enExample) |
| IT (1) | IT7968943A0 (enExample) |
| NL (1) | NL7920079A (enExample) |
| SE (1) | SE8004005L (enExample) |
| WO (1) | WO1980000765A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4250516A (en) * | 1979-08-06 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Multistage avalanche photodetector |
| US4383269A (en) * | 1980-09-19 | 1983-05-10 | Bell Telephone Laboratories, Incorporated | Graded bandgap photodetector |
| US4486765A (en) * | 1981-12-07 | 1984-12-04 | At&T Bell Laboratories | Avalanche photodetector including means for separating electrons and holes |
| US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
| US4599632A (en) * | 1982-08-30 | 1986-07-08 | At&T Bell Laboratories | Photodetector with graded bandgap region |
| US4794440A (en) * | 1983-05-25 | 1988-12-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Heterojunction bipolar transistor |
| US4620214A (en) * | 1983-12-02 | 1986-10-28 | California Institute Of Technology | Multiple quantum-well infrared detector |
| US4530752A (en) * | 1984-06-20 | 1985-07-23 | Union Oil Company Of California | Oil shale retorting process |
| JPH01183174A (ja) * | 1988-01-18 | 1989-07-20 | Fujitsu Ltd | 半導体受光素子 |
| US5121181A (en) * | 1989-01-31 | 1992-06-09 | International Business Machines Corporation | Resonant tunneling photodetector for long wavelength applications |
| US5959339A (en) * | 1996-03-19 | 1999-09-28 | Raytheon Company | Simultaneous two-wavelength p-n-p-n Infrared detector |
| US6870239B1 (en) * | 2003-04-04 | 2005-03-22 | Solid State Scientific Corporation | Avalanche photodiode having an extrinsic absorption region |
| RU2386192C1 (ru) * | 2008-08-20 | 2010-04-10 | Александр Иванович Патрашин | Многокаскадный лавинный фотодетектор |
| US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
| US9395182B1 (en) | 2011-03-03 | 2016-07-19 | The Boeing Company | Methods and systems for reducing crosstalk in avalanche photodiode detector arrays |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| US3369132A (en) * | 1962-11-14 | 1968-02-13 | Ibm | Opto-electronic semiconductor devices |
| US3757174A (en) * | 1972-07-31 | 1973-09-04 | Sharp Kk | Light emitting four layer semiconductor |
| US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
| US3928261A (en) * | 1973-05-17 | 1975-12-23 | Minnesota Mining & Mfg | Water removable film-forming compositions for topical application to skin |
| JPS5758075B2 (enExample) * | 1974-10-19 | 1982-12-08 | Sony Corp | |
| US4103312A (en) * | 1977-06-09 | 1978-07-25 | International Business Machines Corporation | Semiconductor memory devices |
| US4110778A (en) * | 1977-06-21 | 1978-08-29 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow-band inverted homo-heterojunction avalanche photodiode |
-
1978
- 1978-10-06 US US05/949,057 patent/US4203124A/en not_active Expired - Lifetime
-
1979
- 1979-09-13 CA CA000335545A patent/CA1135823A/en not_active Expired
- 1979-09-21 GB GB8016844A patent/GB2043346B/en not_active Expired
- 1979-09-21 WO PCT/US1979/000749 patent/WO1980000765A1/en not_active Ceased
- 1979-09-21 JP JP50163979A patent/JPS55500788A/ja active Pending
- 1979-09-21 NL NL7920079A patent/NL7920079A/nl not_active Application Discontinuation
- 1979-10-04 BE BE0/197469A patent/BE879196A/fr not_active IP Right Cessation
- 1979-10-04 AU AU51478/79A patent/AU522867B2/en not_active Ceased
- 1979-10-05 FR FR7924886A patent/FR2438343A1/fr active Granted
- 1979-10-05 ES ES484787A patent/ES484787A1/es not_active Expired
- 1979-10-05 IT IT7968943A patent/IT7968943A0/it unknown
-
1980
- 1980-05-29 SE SE8004005A patent/SE8004005L/ not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE8004005L (sv) | 1980-05-29 |
| GB2043346B (en) | 1982-05-06 |
| FR2438343A1 (fr) | 1980-04-30 |
| AU522867B2 (en) | 1982-07-01 |
| AU5147879A (en) | 1980-04-17 |
| JPS55500788A (enExample) | 1980-10-16 |
| CA1135823A (en) | 1982-11-16 |
| WO1980000765A1 (en) | 1980-04-17 |
| GB2043346A (en) | 1980-10-01 |
| US4203124A (en) | 1980-05-13 |
| NL7920079A (nl) | 1980-08-29 |
| IT7968943A0 (it) | 1979-10-05 |
| ES484787A1 (es) | 1980-10-01 |
| BE879196A (fr) | 1980-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |