AU522867B2 - Multistage avalanche photodetector - Google Patents

Multistage avalanche photodetector

Info

Publication number
AU522867B2
AU522867B2 AU51478/79A AU5147879A AU522867B2 AU 522867 B2 AU522867 B2 AU 522867B2 AU 51478/79 A AU51478/79 A AU 51478/79A AU 5147879 A AU5147879 A AU 5147879A AU 522867 B2 AU522867 B2 AU 522867B2
Authority
AU
Australia
Prior art keywords
avalanche photodetector
multistage
multistage avalanche
photodetector
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU51478/79A
Other languages
English (en)
Other versions
AU5147879A (en
Inventor
James Power Gordon
Robert Edward Nahory
Martin Alan Pollack
John Mathew Worlock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of AU5147879A publication Critical patent/AU5147879A/en
Application granted granted Critical
Publication of AU522867B2 publication Critical patent/AU522867B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
AU51478/79A 1978-10-06 1979-10-04 Multistage avalanche photodetector Ceased AU522867B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US949057 1978-10-06
US05/949,057 US4203124A (en) 1978-10-06 1978-10-06 Low noise multistage avalanche photodetector

Publications (2)

Publication Number Publication Date
AU5147879A AU5147879A (en) 1980-04-17
AU522867B2 true AU522867B2 (en) 1982-07-01

Family

ID=25488536

Family Applications (1)

Application Number Title Priority Date Filing Date
AU51478/79A Ceased AU522867B2 (en) 1978-10-06 1979-10-04 Multistage avalanche photodetector

Country Status (12)

Country Link
US (1) US4203124A (enExample)
JP (1) JPS55500788A (enExample)
AU (1) AU522867B2 (enExample)
BE (1) BE879196A (enExample)
CA (1) CA1135823A (enExample)
ES (1) ES484787A1 (enExample)
FR (1) FR2438343A1 (enExample)
GB (1) GB2043346B (enExample)
IT (1) IT7968943A0 (enExample)
NL (1) NL7920079A (enExample)
SE (1) SE8004005L (enExample)
WO (1) WO1980000765A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector
US4486765A (en) * 1981-12-07 1984-12-04 At&T Bell Laboratories Avalanche photodetector including means for separating electrons and holes
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
US4599632A (en) * 1982-08-30 1986-07-08 At&T Bell Laboratories Photodetector with graded bandgap region
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
US4620214A (en) * 1983-12-02 1986-10-28 California Institute Of Technology Multiple quantum-well infrared detector
US4530752A (en) * 1984-06-20 1985-07-23 Union Oil Company Of California Oil shale retorting process
JPH01183174A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd 半導体受光素子
US5121181A (en) * 1989-01-31 1992-06-09 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications
US5959339A (en) * 1996-03-19 1999-09-28 Raytheon Company Simultaneous two-wavelength p-n-p-n Infrared detector
US6870239B1 (en) * 2003-04-04 2005-03-22 Solid State Scientific Corporation Avalanche photodiode having an extrinsic absorption region
RU2386192C1 (ru) * 2008-08-20 2010-04-10 Александр Иванович Патрашин Многокаскадный лавинный фотодетектор
US8279411B2 (en) * 2008-08-27 2012-10-02 The Boeing Company Systems and methods for reducing crosstalk in an avalanche photodiode detector array
US9395182B1 (en) 2011-03-03 2016-07-19 The Boeing Company Methods and systems for reducing crosstalk in avalanche photodiode detector arrays

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US3369132A (en) * 1962-11-14 1968-02-13 Ibm Opto-electronic semiconductor devices
US3757174A (en) * 1972-07-31 1973-09-04 Sharp Kk Light emitting four layer semiconductor
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US3928261A (en) * 1973-05-17 1975-12-23 Minnesota Mining & Mfg Water removable film-forming compositions for topical application to skin
JPS5758075B2 (enExample) * 1974-10-19 1982-12-08 Sony Corp
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4110778A (en) * 1977-06-21 1978-08-29 The United States Of America As Represented By The Secretary Of The Air Force Narrow-band inverted homo-heterojunction avalanche photodiode

Also Published As

Publication number Publication date
SE8004005L (sv) 1980-05-29
GB2043346B (en) 1982-05-06
FR2438343A1 (fr) 1980-04-30
AU5147879A (en) 1980-04-17
JPS55500788A (enExample) 1980-10-16
CA1135823A (en) 1982-11-16
WO1980000765A1 (en) 1980-04-17
GB2043346A (en) 1980-10-01
FR2438343B1 (enExample) 1981-05-29
US4203124A (en) 1980-05-13
NL7920079A (nl) 1980-08-29
IT7968943A0 (it) 1979-10-05
ES484787A1 (es) 1980-10-01
BE879196A (fr) 1980-02-01

Similar Documents

Publication Publication Date Title
AU4358679A (en) Vortex dripper
AU525380B2 (en) Backpack
AU530379B2 (en) Cyclosporins
AU513577B2 (en) Shelves
AU4782679A (en) Oxygenerator
AU4569779A (en) 4-aza-17-substituted-5a-androstan-3-ones
AU1328683A (en) O-alkoxycarbonyl benzenesulfonylisocyanates
AU531757B2 (en) Pyrimidones
AU4655479A (en) Ear-plugs
AU4529679A (en) N-heterocyclyl-4-piperidinamines
AU8331682A (en) Improved photodetector
AU4406379A (en) 1-aryloxy-3-hitratoalkylamino-2-propanols
AU522867B2 (en) Multistage avalanche photodetector
AU4754479A (en) Carbamimido thiaotes
AU4506179A (en) Nitrodiarylamines
AU4530579A (en) Plansifters
AU4642179A (en) 4-quinolinylaminobenzoylpiperidines
AU4524379A (en) N-oxacyclic-alkylpiperidyl-diazacompounds
AU4571479A (en) 2-aminopyrimidones
AU4398479A (en) N-azolylalkyl-halogenoacetanilides
AU4507279A (en) Phenoxyalkylamines
AU4519079A (en) Dilignols
AU4450379A (en) Androstadienes
AU4819179A (en) Pump
AU6226980A (en) Multistage avalanche photodetector