GB2032414A

GB2032414A - Oxidation Resistant Silicon Nitride Containing Rare Earth Oxide

Info

Publication number: GB2032414A
Application number: GB7932447A
Authority: GB
Original assignee: GTE Laboratories Inc
Current assignee: Verizon Laboratories Inc
Priority date: 1978-09-20
Filing date: 1979-09-19
Publication date: 1980-05-08
Also published as: DE2937740A1; DE2937740C2; FR2436764B1; JPS5542295A; GB2032414B; FR2436764A1; CA1123862A

Abstract

Si3N4 polycrystalline ceramic bodies formed from starting materials containing about 2 to 4 weight percent SiO2, less than 0.1 weight percent cation impurities and Y2O3 in critical amounts, such that compounds of Si3N4 and Y2O3 have a mole ratio of Si3N4 to Y2O3 greater than 1, exhibit optimum oxidation resistance. Preferably Y2O3 is present in the amount of 3 to 13 and more preferably 11 to 13 percent by weight of the composition. Such bodies are useful as engine parts or components or as regenerator structures for waste heat recovery.

Description

SPECIFICATION Oxidation Resistant Silicon Nitride Containing Rare Earth Oxide This invention relates to polycrystalline bodies of silicon nitride (Si3N4) and more particularly relates to such bodies containing critical amounts of Y203 to obtain optimum oxidation resistance.

Si3N4 powder characterized by cation impurities of 0.1 weight percent or less, a morphology of predominately crystalline alpha phase and/or amorphous phase and fine particle size (3 microns or less average particle size as determined by B.E.T.), when consolidated with an additive such as MgO or Y203 and sintered, is known to enable production of polycrystalline bodies approaching theoretical density.

See U.S. Patent No. 4,073,845, issued to S. T. Buljan et al. on February 14, 1978, and assigned to GTE Sylvania Incorporated. Such powders may be consolidated into dense bodies by either hot pressing at less severe temperature and pressure conditions than are necessary with less pure and less reactive powders, or by cold pressing and sintering, which is not possible with some less pure and less reactive powders. In the fabrication of such polycrystalline bodies, up to 25 weight percent of yttrium oxide or a lanthanide rare earth oxide such as CeO2 is typically added as a sintering or densifying aid.While such modifying additives are thought to deleteriously affect maximum attainable high temperature strength and creep resistance, nevertheless such additives are thought essential to achieve highest densities, that is, densities approaching theoretical, which'densities are also critical to the achievement of high temperature strength.

A related property which is highly desirable for such bodies exhibiting high strength at high temperatures is resistant to oxidation, particularly when considering the effect of such oxidation in a corrosive environment expected to be encountered in certain envisioned applications, as for example, as parts in automotive engines operating at temperatures above those hospitable to super alloy materials. The resistance to oxidation of such bodies should be sufficient to avoid significant degradation of mechanical strength properties over long periods of time in such operating environments. Unfortunately, it has been found that certain dense 5i3N4 bodies containing rare earth oxide additives, while initially exhibiting excellent high temperature strength, also exhibit only fair to poor oxidation resistance.

In accordance with the invention, it has been discovered that maintaining yttrium oxide (Y203) within a critical range in polycrystalline Si3N4 bodies produced from reactive 5i3N4 powder containing up to 0.1 weight percent of cation impurities and between about 2 and 4 weight percent SiO2, enables optimization of oxidation resistance in such bodies, making them particularly useful in applications requiring maintenance of good to excellent mechanical strength at high temperatures over significant periods of operating life. Such applications include vehicular and aerospace engine and related structural parts, regenerators and recuperators for waste heat recovery, etc.As used herein, the term "reactive powder" means powder having an average particle size less than 3 microns as determined by B.E.T. analysis, and having a morphology of substantially crystalline alpha phase and/or amorphous phase. Herein, the term "amorphous" refers to a short range order solid material as indicated by its lack of x-ray diffraction intensity peaks and by broad infrared absorption peaks. The term "Si3N4 body" means a polycrystalline of Si3N4 grains and a second intergranular phase containing SiO2, intentional additives and unintentional impurities. The terms "crystalline" and "polycrystalline" describe a solid composed of atoms, ions or molecules arranged in a pattern which is repetitive in three dimensions and exhibits distinct x-ray diffraction intensity peaks characteristic of the crystal structure.

More specifically, it has been discovered that Y203 should be maintained below the level at which the 1:1 compound, Si3N4-Y203, is likely to form, since this compound has been found to have a deleterious effect upon the oxidation resistance of the body.

The invention accordingly provides a polycrystalline ceramic body consisting essentially of a composition of Si3N4, SiO2 and Y203, characterized in that compounds of 5i3N4 and Y203 have a mole ratio of 5i3N4 to Y203 greater than 1.

The invention is illustrated by way of example in the accompanying drawings, in which: Figure 1 is a pseudoternary diagram for Si3N4, SiO2, and Y203, showing phase relationships and certain binary and ternary compounds within the phase diagram; Figure 2 is a plot of oxidation as indicated by weight gain per unit surface area on the vertical axis in grams per square meter, versus Y203 content in weight percent on the horizontal axis for an oxidation time of 6 hours at a temperature of 12000 C.

The Si3N4 starting material for the preparation of a body in accordance with the invention may be amorphous material, amorphous material which has been partly crystallized by heat treatment, or may be a mixture of substantially completely amorphous material and substantially completely crystalline material.

In the examples which follow herein, compositions are prepared by hot pressing. While a general procedure is outlined for hot pressing, it is to be understood that alternate processes for producing 5i3N4 bodies are also suitable in the practice of the invention, for example, hot isotactic pressing or any pressureless sintering step preceded by a suitable consolidation step such as dry pressing, isostatic pressing, extruding, slip casting, injection molding, etc. See U.S. Patent No. 4,073,845 for a general procedure for pressureless sintering of silicon nitride bodies.

A general procedure for hot pressing will now be described. Silicon nitride powder consisting of 30 to 40 weight percent amorphous silicon nitride, remainder crystalline silicon nitride, with about 95% of the crystalline silicon nitride being the alpha phase, 100 parts per million cation impurities and about 2 to 4 weight percent SiO2, is mixed with from 2 to 25 weight percent oft203 using methanol or a solution of toluene and about 3 volume percent methanol to form a slurry and the slurry is milled with Si3N4 grinding media for about one hour to effect a uniform ball milled blend of the starting powders. The slurry is then dried and screened through a coarse mesh screen such as 50 to 100 mesh. The dried material may optionally be dry milled for about 3 to 50 hours prior to screening.

The screened powder is then loaded into a graphite hot pressing die whose interior surfaces have previously been coated with boron nitride powder. The powder is then prepressed at about 2000 psi and then the die is placed in a chamber containing argon, and a pressure of about 500 psi is applied up to about 1 2000C, and then pressure and temperature are increased simultaneously so that the uitimate pressure and temperature are achieved at about the same time. The densification process is monitored using a dial gauge indicating ram travel within the die body. A rate of downward movement of the ram cross head below about 0.004 inches per hour indicates completion of densification. At this point, the assembly is cooled slowly over a period of about 1 to 2 hours.Ultimate pressures and temperatures of from 3,000 to 5,000 psi and 1 6750C to 1 8000C for a time of about 2 to 3 hours are adequate conditions for the achievement of essentially full densification of the silicon nitride body.

Examples of five bodies containing Y203 produced by this process with different ratios of alpha phase to amorphous phase in the starting silicon nitride powder is shown in Table I. Mechanical strength is presented for some of the bodies of Table I in Table II, respectively.

All strength measurements are in terms of Modulus of Rupture (MOR in psix 103), and were made from room temperature to 1 4000C using a four point loading fixture with a 0.9 inch outer span and a 0.4 inch inner span, which stresses the specimen by cross bending. Specimen size was 0.050 inch by 0.100 inch by one inch. All hot pressed specimens were tested in the strong direction, with a crosshead speed of 0.02 inches per minute on an Instron machine. Strength was determined by the elastic beam formula, the dimensions of the test specimen and the test fixture. Theoretical density was calculated by the simple rule of mixtures for Si3N4 and Y203.

Table I Hot Pressing Conditions for Silicon Nitride+Y2O3 Powders Y203 Temperature Time Pressure Density (weight percent) { CJ (min) fKsiJ (% theoretical) 1.5 3.4 1750 180 3 100.0 1.5 3.4 1825 125 5 100.0 1.5 8 1750 170 5 98.9 1.5 10 1725 105 3 98,7 1.5 13 1725 180 5 97.9 *ski02 content in the above compositions averaged about 3.5 weight percent.

Table II Strength of Hot Pressed Silicon Nitride+Y2O3 y203 Density MOR tpsix 103) (weight percent) (% theoretical) 23 or 1200 OC 1400 OC 3.4 100 115 - - 8 98.9 135 - - 10 98.7 137 - 13 97.9 129 93.7 47.5 Referring now to Figure 1 of the drawing, which is a pseudoternary phase diagram for Si3N4, SiO2 and203, after R. R. Wills et al., J. Materials Science, 11(1976), p. 1305, it will be seen that there are three compatibility triangles labeled I, ll, and Ill.In accordance with the invention, it has been discovered that compositions within compatibility triangles I and II, that is, those containing at least 3 weight percent SiO2 and about 3 to 13 weight percent Y203, exhibit optimum oxidation resistance at elevated temperatures. Compositions containing about 3 weight percent SiO2 and greater than 13 weight percent Y203 fall into compatibility triangle III and exhibit fair to poor oxidation resistance at elevated temperatures. This is illustrated graphically in Figure 2, wherein weight gain per unit surface area in grams per square meters is plotted on a vertical axis versus Y203 content in weight percent on the horizontal axis. As may be seen from the figure, weight gain increases slightly between 3.3 and 8 weight percent Y203, increases slightly more between 8 and 10 weight percent Y203 and actually decreases between 10 and 1 3 weight percent Y203, whereas above 13 weight percent Y203 weight gain increases drastically to 1 5 weight percent Y203 and thereafter decreases at a moderate rate to 20 weight percent Y203. However even at 20 weight percent Y203 weight gain is approximately 7 times that between 3.3 and 10 weight percent Y203. Based upon such observation compositions containing from about 11 to 13 weight percent Y203 are preferred. Below about 3 weight percent Y203, its beneficial effect as a densifying and/or sintering aid is appreciably reduced.

The significantly decreased oxidation resistance within compatibility triangle Ill is caused by the presence of the 1:1 Si3N4. .Y203 compound. Such compound is the only phase not common to compatibility triangles I, II, and III. Therefore, where SiO2 is below about 3 weight percent, it may be expected that accompanying Y203 content which cause the composition to move into compatibility triangle Ill would result in substantially decreased oxidation resistance for the Si3N4 body.

While there has been shown and described what are at present considered the preferred embodiments of the invention, it will be obvious to those skilled in the art that various changes and modifications may be made therein without departing from the scope of the invention as defined by the appended claims.

Claims

1. A polycrystalline ceramic body consisting essentially of a composition of Si3N4, SiO2 and Y203, characterized in that compounds of Si3N4 and Y203 have a mole ratio of Si3N4 to Y203 greater than 1.

2. A body as claimed in Claim 1, wherein Y203 is present in the amount of about 3 to 13 weight percent of the composition.

3. A body as claimed in Claim 2, wherein Y203 is present in the amount of about 11 to 13 weight percent.

4. A body as claimed in Claim 3, wherein Si02 is present in the amount of at least 3 weight percent.

5. A body as claimed in any one of Ciaims 1-4, wherein cation impurities are below 0.1 weight percent.

6. A body as claimed in Claim 1, substantially as described herein.

7. The features as herein described, or their equivalents, in any novel selection.