GB2014121B - Method of manufacturing a single crystal of a compound - Google Patents

Method of manufacturing a single crystal of a compound

Info

Publication number
GB2014121B
GB2014121B GB7904082A GB7904082A GB2014121B GB 2014121 B GB2014121 B GB 2014121B GB 7904082 A GB7904082 A GB 7904082A GB 7904082 A GB7904082 A GB 7904082A GB 2014121 B GB2014121 B GB 2014121B
Authority
GB
United Kingdom
Prior art keywords
compound
manufacturing
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7904082A
Other languages
English (en)
Other versions
GB2014121A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2014121A publication Critical patent/GB2014121A/en
Application granted granted Critical
Publication of GB2014121B publication Critical patent/GB2014121B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB7904082A 1978-02-09 1979-02-06 Method of manufacturing a single crystal of a compound Expired GB2014121B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7803631A FR2416729A1 (fr) 1978-02-09 1978-02-09 Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''

Publications (2)

Publication Number Publication Date
GB2014121A GB2014121A (en) 1979-08-22
GB2014121B true GB2014121B (en) 1982-06-09

Family

ID=9204391

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7904082A Expired GB2014121B (en) 1978-02-09 1979-02-06 Method of manufacturing a single crystal of a compound

Country Status (5)

Country Link
US (1) US4528062A (en, 2012)
JP (1) JPS54114482A (en, 2012)
DE (1) DE2904301A1 (en, 2012)
FR (1) FR2416729A1 (en, 2012)
GB (1) GB2014121B (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
US20090098377A1 (en) * 2005-03-31 2009-04-16 Dowa Electronics Materials Co., Ltd. Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot
US7951640B2 (en) 2008-11-07 2011-05-31 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
CN114808133B (zh) * 2022-03-21 2024-06-07 西北工业大学 一种优化化合物半导体晶体中空位缺陷的掺杂方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944975A (en) * 1955-09-14 1960-07-12 Siemens Ag Method for producing and re-melting compounds having high vapor pressure at the meltig point
DE1161036B (de) * 1960-03-21 1964-01-09 Texas Instruments Inc Verfahren zur Herstellung von hochdotierten AB-Halbleiterverbindungen
US3322501A (en) * 1964-07-24 1967-05-30 Ibm Preparation of gallium arsenide with controlled silicon concentrations
DE1533379A1 (de) * 1966-09-30 1970-02-26 Siemens Ag Verfahren zur Herstellung von Einkristallen aus hochreinem,insbesondere siliziumfreiem Galliumarsenid
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
FR1569786A (en, 2012) * 1968-03-22 1969-06-06
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
JPS4915901B1 (en, 2012) * 1969-09-10 1974-04-18
US3628998A (en) * 1969-09-23 1971-12-21 Ibm Method for growth of a mixed crystal with controlled composition
DE2021345A1 (de) * 1970-04-30 1972-01-13 Siemens Ag Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
US3915754A (en) * 1973-11-29 1975-10-28 Honeywell Inc Growth of gallium phosphide
FR2255949B1 (en, 2012) * 1973-12-28 1976-10-08 Radiotechnique Compelec
FR2318679A1 (fr) * 1974-01-10 1977-02-18 Radiotechnique Compelec Procede de formation de lingots monocristallins de composes semiconducteurs
US4119704A (en) * 1975-02-14 1978-10-10 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for making gallium arsenide or phosphide
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
FR2356271A1 (fr) * 1976-02-06 1978-01-20 Labo Electronique Physique Croissance acceleree en phase vapeur

Also Published As

Publication number Publication date
FR2416729A1 (fr) 1979-09-07
GB2014121A (en) 1979-08-22
JPS54114482A (en) 1979-09-06
DE2904301A1 (de) 1979-09-06
US4528062A (en) 1985-07-09
FR2416729B1 (en, 2012) 1980-08-29
JPS5761720B2 (en, 2012) 1982-12-25
DE2904301C2 (en, 2012) 1990-02-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970206