GB2011707A - Silicon diaphragm with integrated piezo-resistant semi-conductor strain gauge elements. - Google Patents

Silicon diaphragm with integrated piezo-resistant semi-conductor strain gauge elements.

Info

Publication number
GB2011707A
GB2011707A GB7843496A GB7843496A GB2011707A GB 2011707 A GB2011707 A GB 2011707A GB 7843496 A GB7843496 A GB 7843496A GB 7843496 A GB7843496 A GB 7843496A GB 2011707 A GB2011707 A GB 2011707A
Authority
GB
United Kingdom
Prior art keywords
gauge elements
diaphragm
strain
piezo
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7843496A
Other versions
GB2011707B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TELTOV GERAETE REGLER
Original Assignee
TELTOV GERAETE REGLER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TELTOV GERAETE REGLER filed Critical TELTOV GERAETE REGLER
Publication of GB2011707A publication Critical patent/GB2011707A/en
Application granted granted Critical
Publication of GB2011707B publication Critical patent/GB2011707B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A silicon diaphragm with integrated piezo-resistive semi-conductor strain-gauge elements typically in bridge circuit arrangement is intended for use in pressure-measuring transducers. Radial and tangential semi-conductor strain-gauge elements 3 to 6 provided on the diaphragm 1 are arranged in pairs on different radii of the diaphragm. The diaphragm has a crystal orientation having an anisotropy of the piezo-resistive coefficients along the direction of the strain-gauge elements, the strain-gauge elements being arranged in the vicinity of selected crystal axes which lie in the plane of the diaphragm, extend perpendicularly of one another and in which the piezo- resistive coefficient has a maximum transmission factor. The strain-gauge elements are connected to form an open full bridge circuit into which a suitable resistance network is connected for temperature compensation. <IMAGE>
GB7843496A 1977-12-29 1978-11-07 Silicon diaphragm with integrated piezo resistive semi conductor strain gauge elements Expired GB2011707B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD7700202998A DD133714A1 (en) 1977-12-29 1977-12-29 SILICON BENDING PLATE WITH INTEGRATED PIEZORESISTIVAL SEMICONDUCTOR MEASURING ELEMENTS

Publications (2)

Publication Number Publication Date
GB2011707A true GB2011707A (en) 1979-07-11
GB2011707B GB2011707B (en) 1982-06-16

Family

ID=5511095

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7843496A Expired GB2011707B (en) 1977-12-29 1978-11-07 Silicon diaphragm with integrated piezo resistive semi conductor strain gauge elements

Country Status (5)

Country Link
DD (1) DD133714A1 (en)
DE (1) DE2844893A1 (en)
GB (1) GB2011707B (en)
IT (1) IT1158180B (en)
SE (1) SE7813216L (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2166287A (en) * 1984-10-30 1986-04-30 Burr Brown Corp Pressure-sensitive device
FR2653271A1 (en) * 1989-10-13 1991-04-19 Schlumberger Ind Sa SEMICONDUCTOR SENSOR.
EP0507582A1 (en) * 1991-04-02 1992-10-07 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor
US5281836A (en) * 1989-10-12 1994-01-25 Schlumberger Industries Semiconductor sensor with perpendicular N and P-channel MOSFET's
US5397911A (en) * 1991-04-02 1995-03-14 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor with plural gate electrodes
US10296148B2 (en) 2016-08-31 2019-05-21 Synaptics Incorporated Full-bridge strain-gauge array of finger thermal compensation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128673A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor pressure-sensing device
CN105318830B (en) * 2015-12-04 2018-03-02 浙江工业大学 The sensitive grid full-bridge of lateral deviation six mixes interdigital metal strain plate
CN105333812B (en) * 2015-12-04 2018-06-29 浙江工业大学 Interdigital metal strain plate in five sensitive grid of cross direction profiles

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2166287A (en) * 1984-10-30 1986-04-30 Burr Brown Corp Pressure-sensitive device
US5281836A (en) * 1989-10-12 1994-01-25 Schlumberger Industries Semiconductor sensor with perpendicular N and P-channel MOSFET's
FR2653271A1 (en) * 1989-10-13 1991-04-19 Schlumberger Ind Sa SEMICONDUCTOR SENSOR.
WO1991006125A1 (en) * 1989-10-13 1991-05-02 Schlumberger Industries Semiconductor sensor
EP0507582A1 (en) * 1991-04-02 1992-10-07 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor
US5225705A (en) * 1991-04-02 1993-07-06 Honda Giken Kogyo Kabushiki Kaisha Semiconductor stress sensor mesfet or mesfet array
US5397911A (en) * 1991-04-02 1995-03-14 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor with plural gate electrodes
US10296148B2 (en) 2016-08-31 2019-05-21 Synaptics Incorporated Full-bridge strain-gauge array of finger thermal compensation

Also Published As

Publication number Publication date
IT1158180B (en) 1987-02-18
GB2011707B (en) 1982-06-16
SE7813216L (en) 1979-06-30
DE2844893A1 (en) 1979-07-05
IT7852392A0 (en) 1978-12-20
DD133714A1 (en) 1979-01-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee