GB1600779A - Integrated circuit structures - Google Patents
Integrated circuit structures Download PDFInfo
- Publication number
- GB1600779A GB1600779A GB20083/78A GB2008378A GB1600779A GB 1600779 A GB1600779 A GB 1600779A GB 20083/78 A GB20083/78 A GB 20083/78A GB 2008378 A GB2008378 A GB 2008378A GB 1600779 A GB1600779 A GB 1600779A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- transistor
- transistors
- injector
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 claims description 24
- 239000007924 injection Substances 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 210000004027 cell Anatomy 0.000 description 16
- 230000006870 function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000015654 memory Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005272 metallurgy Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 210000004128 D cell Anatomy 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
- H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7729867A FR2404962A1 (fr) | 1977-09-28 | 1977-09-28 | Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1600779A true GB1600779A (en) | 1981-10-21 |
Family
ID=9196096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB20083/78A Expired GB1600779A (en) | 1977-09-28 | 1978-05-17 | Integrated circuit structures |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4277701A (enExample) |
| JP (1) | JPS5454585A (enExample) |
| DE (1) | DE2841755A1 (enExample) |
| FR (1) | FR2404962A1 (enExample) |
| GB (1) | GB1600779A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4338622A (en) * | 1979-06-29 | 1982-07-06 | International Business Machines Corporation | Self-aligned semiconductor circuits and process therefor |
| FR2469049A1 (fr) * | 1979-10-30 | 1981-05-08 | Ibm France | Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant |
| JPS5852870A (ja) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | 半導体集積回路装置 |
| US4789884A (en) * | 1985-04-12 | 1988-12-06 | Hitachi, Ltd. | IIL circuit with PNP injector |
| DE3637158A1 (de) * | 1986-10-31 | 1988-08-11 | Telefunken Electronic Gmbh | Kettenfoermige logikschaltung |
| US4843448A (en) * | 1988-04-18 | 1989-06-27 | The United States Of America As Represented By The Secretary Of The Navy | Thin-film integrated injection logic |
| JPH0425821U (enExample) * | 1990-06-22 | 1992-03-02 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3643235A (en) * | 1968-12-30 | 1972-02-15 | Ibm | Monolithic semiconductor memory |
| NL7107040A (enExample) * | 1971-05-22 | 1972-11-24 | ||
| DE2165729C3 (de) * | 1971-12-30 | 1975-02-13 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung |
| GB1494481A (en) * | 1973-12-21 | 1977-12-07 | Mullard Ltd | Electrical circuits comprising master/slave bistable arrangements |
| JPS6048683B2 (ja) * | 1975-07-25 | 1985-10-29 | 株式会社日立製作所 | 物体表面状態検査方法とその検査装置 |
| US4156154A (en) * | 1976-12-14 | 1979-05-22 | Tokyo Shibaura Electric Co., Ltd. | Flip-flop circuit |
| US4160173A (en) * | 1976-12-14 | 1979-07-03 | Tokyo Shibaura Electric Co., Ltd. | Logic circuit with two pairs of cross-coupled nand/nor gates |
-
1977
- 1977-09-28 FR FR7729867A patent/FR2404962A1/fr active Granted
-
1978
- 1978-05-17 GB GB20083/78A patent/GB1600779A/en not_active Expired
- 1978-07-13 US US05/924,126 patent/US4277701A/en not_active Expired - Lifetime
- 1978-09-07 JP JP10919378A patent/JPS5454585A/ja active Granted
- 1978-09-26 DE DE19782841755 patent/DE2841755A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2404962B1 (enExample) | 1980-08-01 |
| JPS5454585A (en) | 1979-04-28 |
| JPS5551347B2 (enExample) | 1980-12-23 |
| DE2841755A1 (de) | 1979-04-05 |
| US4277701A (en) | 1981-07-07 |
| FR2404962A1 (fr) | 1979-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |