GB1594116A - Capacitors - Google Patents
Capacitors Download PDFInfo
- Publication number
- GB1594116A GB1594116A GB45974/77A GB4597477A GB1594116A GB 1594116 A GB1594116 A GB 1594116A GB 45974/77 A GB45974/77 A GB 45974/77A GB 4597477 A GB4597477 A GB 4597477A GB 1594116 A GB1594116 A GB 1594116A
- Authority
- GB
- United Kingdom
- Prior art keywords
- capacitor
- electrode
- substrate
- recess
- thin oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762650708 DE2650708A1 (de) | 1976-11-05 | 1976-11-05 | Speicherkondensator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1594116A true GB1594116A (en) | 1981-07-30 |
Family
ID=5992531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB45974/77A Expired GB1594116A (en) | 1976-11-05 | 1977-11-04 | Capacitors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5357981A (fr) |
| DE (1) | DE2650708A1 (fr) |
| FR (1) | FR2370363A1 (fr) |
| GB (1) | GB1594116A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61135151A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS62136066A (ja) * | 1985-12-09 | 1987-06-19 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6486053A (en) * | 1987-09-29 | 1989-03-30 | Toshiba Corp | Sensitive element |
-
1976
- 1976-11-05 DE DE19762650708 patent/DE2650708A1/de not_active Withdrawn
-
1977
- 1977-10-25 FR FR7732061A patent/FR2370363A1/fr not_active Withdrawn
- 1977-11-04 JP JP13242377A patent/JPS5357981A/ja active Pending
- 1977-11-04 GB GB45974/77A patent/GB1594116A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5357981A (en) | 1978-05-25 |
| FR2370363A1 (fr) | 1978-06-02 |
| DE2650708A1 (de) | 1978-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR940006682B1 (ko) | 반도체 메모리장치의 제조방법 | |
| DE4446983C2 (de) | Verfahren zur Herstellung eines Kondensators einer Halbleitervorrichtung | |
| US5304506A (en) | On chip decoupling capacitor | |
| DE112015006966T5 (de) | Herstellung von multikanal-nanodrahtvorrichtungen mit selbstausrichtenden internen abstandhaltern und soi finfets unter verwendung einer selektiven siliziumnitridkappe | |
| US5330924A (en) | Method of making 0.6 micrometer word line pitch ROM cell by 0.6 micrometer technology | |
| DE4318660C2 (de) | Halbleitereinrichtung und Herstellungsverfahren dafür | |
| KR950015770A (ko) | 반도체장치의 커패시터 제조방법 | |
| US4053349A (en) | Method for forming a narrow gap | |
| KR970077642A (ko) | 반도체 소자의 캐패시터 제조 방법 | |
| JPH06314775A (ja) | ダイナミックｒａｍセル及びその製造方法 | |
| DE10116529A1 (de) | Verfahren zur Herstellung von Kondensatoren mit tiefen Gräben für Drams mit verringerter Facettierung an der Substratkante, und zur Bereitstellung einer gleichförmigeren Anschlussflächenschicht aus SI¶3¶N¶4¶ über das Substrat | |
| KR960006038A (ko) | 비랜덤 서브-리쏘그라피 수직 스택 커패시터 | |
| DE4203565C2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| DE10158798A1 (de) | Kondensator und Verfahren zum Herstellen eines Kondensators | |
| DE3230569A1 (de) | Verfahren zur herstellung eines vertikalkanaltransistors | |
| GB1594116A (en) | Capacitors | |
| US4123300A (en) | Integrated circuit process utilizing lift-off techniques | |
| JPH03101261A (ja) | 容量素子の形成方法 | |
| DE19947082B4 (de) | Integrierte Speicherzellenanordnung mit mindestens einem Kondensator und einem Transistor und Verfahren zur Herstellung einer integrierten Speicherzelle | |
| EP0234384A1 (fr) | Cellule tridimensionnelle à un transistor pour mémoire dynamique à semi-conducteur et méthode pour sa fabrication | |
| EP0471243B1 (fr) | Procédé de fabrication d'un dispositif à condensateur à grande capacité | |
| KR960015525B1 (ko) | 반도체 소자의 제조방법 | |
| DE19950364A1 (de) | Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung | |
| DE69729982T2 (de) | DRAM und Verfahren zur Herstellung von DRAM mit erhöhter Kapazität | |
| KR0147660B1 (ko) | 반도체방치의 커패시터 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |