GB1585503A - Outer-ring lateral transistor and a protection circuit comprising a transistor of this type - Google Patents

Outer-ring lateral transistor and a protection circuit comprising a transistor of this type Download PDF

Info

Publication number
GB1585503A
GB1585503A GB16508/77A GB1650877A GB1585503A GB 1585503 A GB1585503 A GB 1585503A GB 16508/77 A GB16508/77 A GB 16508/77A GB 1650877 A GB1650877 A GB 1650877A GB 1585503 A GB1585503 A GB 1585503A
Authority
GB
United Kingdom
Prior art keywords
transistor
region
collector
base
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16508/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1585503A publication Critical patent/GB1585503A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB16508/77A 1976-04-23 1977-04-20 Outer-ring lateral transistor and a protection circuit comprising a transistor of this type Expired GB1585503A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7612063A FR2349217A1 (fr) 1976-04-23 1976-04-23 Transistor de type lateral a anneau externe,et circuit de protection comportant un tel transistor

Publications (1)

Publication Number Publication Date
GB1585503A true GB1585503A (en) 1981-03-04

Family

ID=9172237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16508/77A Expired GB1585503A (en) 1976-04-23 1977-04-20 Outer-ring lateral transistor and a protection circuit comprising a transistor of this type

Country Status (3)

Country Link
FR (1) FR2349217A1 (enrdf_load_stackoverflow)
GB (1) GB1585503A (enrdf_load_stackoverflow)
IT (1) IT1086889B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638923A1 (de) * 1986-11-14 1988-05-26 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
DE3813436A1 (de) * 1988-04-21 1989-11-02 Siemens Ag Schaltungsanordnung zur verhinderung von substratstroemen

Also Published As

Publication number Publication date
FR2349217A1 (fr) 1977-11-18
IT1086889B (it) 1985-05-31
FR2349217B1 (enrdf_load_stackoverflow) 1978-11-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19970419